Partial and total α parameters in semiconductor optical devices

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

α parameters due to partial variation of carrier density (αN) or temperature (αT) are calculated for a two-dimensional semiconductor. We also introduce and investigate the total alpha parameter (αt) due to simultaneous variations of the carrier density and temperature. We find that, unlike the usual αN, the partial αT and total αt show quite different behavior with changes in underlying variables and could be positive, negative, or singular.

Original languageEnglish (US)
Pages (from-to)1887-1889
Number of pages3
JournalApplied Physics Letters
Volume72
Issue number15
DOIs
StatePublished - 1998
Externally publishedYes

Fingerprint

temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Partial and total α parameters in semiconductor optical devices. / Ning, Cun-Zheng.

In: Applied Physics Letters, Vol. 72, No. 15, 1998, p. 1887-1889.

Research output: Contribution to journalArticle

@article{12fa4c5e458a4421b6f62932fa1c5e50,
title = "Partial and total α parameters in semiconductor optical devices",
abstract = "α parameters due to partial variation of carrier density (αN) or temperature (αT) are calculated for a two-dimensional semiconductor. We also introduce and investigate the total alpha parameter (αt) due to simultaneous variations of the carrier density and temperature. We find that, unlike the usual αN, the partial αT and total αt show quite different behavior with changes in underlying variables and could be positive, negative, or singular.",
author = "Cun-Zheng Ning",
year = "1998",
doi = "10.1063/1.121216",
language = "English (US)",
volume = "72",
pages = "1887--1889",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "15",

}

TY - JOUR

T1 - Partial and total α parameters in semiconductor optical devices

AU - Ning, Cun-Zheng

PY - 1998

Y1 - 1998

N2 - α parameters due to partial variation of carrier density (αN) or temperature (αT) are calculated for a two-dimensional semiconductor. We also introduce and investigate the total alpha parameter (αt) due to simultaneous variations of the carrier density and temperature. We find that, unlike the usual αN, the partial αT and total αt show quite different behavior with changes in underlying variables and could be positive, negative, or singular.

AB - α parameters due to partial variation of carrier density (αN) or temperature (αT) are calculated for a two-dimensional semiconductor. We also introduce and investigate the total alpha parameter (αt) due to simultaneous variations of the carrier density and temperature. We find that, unlike the usual αN, the partial αT and total αt show quite different behavior with changes in underlying variables and could be positive, negative, or singular.

UR - http://www.scopus.com/inward/record.url?scp=0344358656&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0344358656&partnerID=8YFLogxK

U2 - 10.1063/1.121216

DO - 10.1063/1.121216

M3 - Article

VL - 72

SP - 1887

EP - 1889

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 15

ER -