P-type gallium nitride by reactive ion-beam molecular beam epitaxy with ion implantation, diffusion, or coevaporation of Mg

M. Rubin; N. Newman; J. S. Chan; T. C. Fu; J. T. Ross

doi:10.1063/1.110870

P-type gallium nitride by reactive ion-beam molecular beam epitaxy with ion implantation, diffusion, or coevaporation of Mg

M. Rubin, N. Newman, J. S. Chan, T. C. Fu, J. T. Ross

Research output: Contribution to journal › Article › peer-review

144 Scopus citations

Abstract

Gallium nitride is one of the most promising materials for ultraviolet and blue light-emitting diodes and lasers. The principal technical problem that limits device applications has been achieving controllable p-type doping. Molecular beam epitaxy assisted by a nitrogen ion beam produced p-type GaN when doped via ion implantation, diffusion, or coevaporation of Mg. Nearly intrinsic p-type material was also produced without intentional doping, exhibiting hole carrier concentrations of 5×10¹¹ cm^-3 and hole mobilities of over 400 cm²/V/s at 250 K. This value for the hole mobility is an order of magnitude greater than previously reported.

Original language	English (US)
Pages (from-to)	64-66
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	1
DOIs	https://doi.org/10.1063/1.110870
State	Published - 1994
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "Gallium nitride is one of the most promising materials for ultraviolet and blue light-emitting diodes and lasers. The principal technical problem that limits device applications has been achieving controllable p-type doping. Molecular beam epitaxy assisted by a nitrogen ion beam produced p-type GaN when doped via ion implantation, diffusion, or coevaporation of Mg. Nearly intrinsic p-type material was also produced without intentional doping, exhibiting hole carrier concentrations of 5×1011 cm-3 and hole mobilities of over 400 cm2/V/s at 250 K. This value for the hole mobility is an order of magnitude greater than previously reported.",

author = "M. Rubin and N. Newman and Chan, {J. S.} and Fu, {T. C.} and Ross, {J. T.}",

year = "1994",

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AU - Fu, T. C.

AU - Ross, J. T.

PY - 1994

Y1 - 1994

N2 - Gallium nitride is one of the most promising materials for ultraviolet and blue light-emitting diodes and lasers. The principal technical problem that limits device applications has been achieving controllable p-type doping. Molecular beam epitaxy assisted by a nitrogen ion beam produced p-type GaN when doped via ion implantation, diffusion, or coevaporation of Mg. Nearly intrinsic p-type material was also produced without intentional doping, exhibiting hole carrier concentrations of 5×1011 cm-3 and hole mobilities of over 400 cm2/V/s at 250 K. This value for the hole mobility is an order of magnitude greater than previously reported.

AB - Gallium nitride is one of the most promising materials for ultraviolet and blue light-emitting diodes and lasers. The principal technical problem that limits device applications has been achieving controllable p-type doping. Molecular beam epitaxy assisted by a nitrogen ion beam produced p-type GaN when doped via ion implantation, diffusion, or coevaporation of Mg. Nearly intrinsic p-type material was also produced without intentional doping, exhibiting hole carrier concentrations of 5×1011 cm-3 and hole mobilities of over 400 cm2/V/s at 250 K. This value for the hole mobility is an order of magnitude greater than previously reported.

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P-type gallium nitride by reactive ion-beam molecular beam epitaxy with ion implantation, diffusion, or coevaporation of Mg

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