P-type gallium nitride by reactive ion-beam molecular beam epitaxy with ion implantation, diffusion, or coevaporation of Mg

M. Rubin, N. Newman, J. S. Chan, T. C. Fu, J. T. Ross

Research output: Contribution to journalArticle

137 Scopus citations

Abstract

Gallium nitride is one of the most promising materials for ultraviolet and blue light-emitting diodes and lasers. The principal technical problem that limits device applications has been achieving controllable p-type doping. Molecular beam epitaxy assisted by a nitrogen ion beam produced p-type GaN when doped via ion implantation, diffusion, or coevaporation of Mg. Nearly intrinsic p-type material was also produced without intentional doping, exhibiting hole carrier concentrations of 5×1011 cm-3 and hole mobilities of over 400 cm2/V/s at 250 K. This value for the hole mobility is an order of magnitude greater than previously reported.

Original languageEnglish (US)
Pages (from-to)64-66
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number1
DOIs
StatePublished - Dec 1 1994
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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