P+ Emitters on n-type c-Si using rapid thermal annealing of PECVD a-Si films and aluminum metallization

Tim Reblitz; Clarence Tracy; Bill Dauksher; Stanislau Herasimenka; Stuart Bowden

doi:10.1109/PVSC.2013.6744927

P+ Emitters on n-type c-Si using rapid thermal annealing of PECVD a-Si films and aluminum metallization

Tim Reblitz, Clarence Tracy, Bill Dauksher, Stanislau Herasimenka, Stuart Bowden

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We present the development and characterization of n-type mono-Si photovoltaic cells with p+ emitters formed by the rapid thermal annealing of PECVD boron-doped amorphous silicon (a-Si) films. Aluminum metallization was deposited from evaporator and sputtering tool sources. The process yielded emitters of excellent uniformity (average non-uniformity of 4.4% over 40 samples) with sheet resistance ranging from 53 ω/□ to 249 ω/□ inversely dependent on the thickness of p+ film annealed. A reasonably-low post-anneal series resistance of 0.602 ω-cm² suggests that all-aluminum metallization is sufficient for silicon photovoltaic cells of high efficiency.

Original language	English (US)
Title of host publication	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2257-2262
Number of pages	6
ISBN (Print)	9781479932993
DOIs	https://doi.org/10.1109/PVSC.2013.6744927
State	Published - 2013
Event	39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States Duration: Jun 16 2013 → Jun 21 2013

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Country/Territory	United States
City	Tampa, FL
Period	6/16/13 → 6/21/13

Keywords

Amorphous semiconductors
Boron
Etching
PECVD
Photovoltaic cells
RTA

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2013.6744927

Cite this

Reblitz, T., Tracy, C., Dauksher, B., Herasimenka, S., & Bowden, S. (2013). P+ Emitters on n-type c-Si using rapid thermal annealing of PECVD a-Si films and aluminum metallization. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 (pp. 2257-2262). Article 6744927 (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2013.6744927

P+ Emitters on n-type c-Si using rapid thermal annealing of PECVD a-Si films and aluminum metallization. / Reblitz, Tim; Tracy, Clarence; Dauksher, Bill et al.
39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. p. 2257-2262 6744927 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Reblitz, T, Tracy, C, Dauksher, B, Herasimenka, S & Bowden, S 2013, P+ Emitters on n-type c-Si using rapid thermal annealing of PECVD a-Si films and aluminum metallization. in 39th IEEE Photovoltaic Specialists Conference, PVSC 2013., 6744927, Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 2257-2262, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, United States, 6/16/13. https://doi.org/10.1109/PVSC.2013.6744927

Reblitz T, Tracy C, Dauksher B, Herasimenka S, Bowden S. P+ Emitters on n-type c-Si using rapid thermal annealing of PECVD a-Si films and aluminum metallization. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc. 2013. p. 2257-2262. 6744927. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2013.6744927

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title = "P+ Emitters on n-type c-Si using rapid thermal annealing of PECVD a-Si films and aluminum metallization",

abstract = "We present the development and characterization of n-type mono-Si photovoltaic cells with p+ emitters formed by the rapid thermal annealing of PECVD boron-doped amorphous silicon (a-Si) films. Aluminum metallization was deposited from evaporator and sputtering tool sources. The process yielded emitters of excellent uniformity (average non-uniformity of 4.4% over 40 samples) with sheet resistance ranging from 53 ω/□ to 249 ω/□ inversely dependent on the thickness of p+ film annealed. A reasonably-low post-anneal series resistance of 0.602 ω-cm2 suggests that all-aluminum metallization is sufficient for silicon photovoltaic cells of high efficiency.",

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author = "Tim Reblitz and Clarence Tracy and Bill Dauksher and Stanislau Herasimenka and Stuart Bowden",

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AU - Herasimenka, Stanislau

AU - Bowden, Stuart

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N2 - We present the development and characterization of n-type mono-Si photovoltaic cells with p+ emitters formed by the rapid thermal annealing of PECVD boron-doped amorphous silicon (a-Si) films. Aluminum metallization was deposited from evaporator and sputtering tool sources. The process yielded emitters of excellent uniformity (average non-uniformity of 4.4% over 40 samples) with sheet resistance ranging from 53 ω/□ to 249 ω/□ inversely dependent on the thickness of p+ film annealed. A reasonably-low post-anneal series resistance of 0.602 ω-cm2 suggests that all-aluminum metallization is sufficient for silicon photovoltaic cells of high efficiency.

AB - We present the development and characterization of n-type mono-Si photovoltaic cells with p+ emitters formed by the rapid thermal annealing of PECVD boron-doped amorphous silicon (a-Si) films. Aluminum metallization was deposited from evaporator and sputtering tool sources. The process yielded emitters of excellent uniformity (average non-uniformity of 4.4% over 40 samples) with sheet resistance ranging from 53 ω/□ to 249 ω/□ inversely dependent on the thickness of p+ film annealed. A reasonably-low post-anneal series resistance of 0.602 ω-cm2 suggests that all-aluminum metallization is sufficient for silicon photovoltaic cells of high efficiency.

KW - Amorphous semiconductors

KW - Boron

KW - Etching

KW - PECVD

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ER -

P+ Emitters on n-type c-Si using rapid thermal annealing of PECVD a-Si films and aluminum metallization

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Keywords

ASJC Scopus subject areas

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