P+ Emitters on n-type c-Si using rapid thermal annealing of PECVD a-Si films and aluminum metallization

Tim Reblitz, Clarence Tracy, Bill Dauksher, Stanislau Herasimenka, Stuart Bowden

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present the development and characterization of n-type mono-Si photovoltaic cells with p+ emitters formed by the rapid thermal annealing of PECVD boron-doped amorphous silicon (a-Si) films. Aluminum metallization was deposited from evaporator and sputtering tool sources. The process yielded emitters of excellent uniformity (average non-uniformity of 4.4% over 40 samples) with sheet resistance ranging from 53 ω/□ to 249 ω/□ inversely dependent on the thickness of p+ film annealed. A reasonably-low post-anneal series resistance of 0.602 ω-cm2 suggests that all-aluminum metallization is sufficient for silicon photovoltaic cells of high efficiency.

Original languageEnglish (US)
Title of host publication39th IEEE Photovoltaic Specialists Conference, PVSC 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2257-2262
Number of pages6
ISBN (Print)9781479932993
DOIs
StatePublished - Jan 1 2013
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: Jun 16 2013Jun 21 2013

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other39th IEEE Photovoltaic Specialists Conference, PVSC 2013
CountryUnited States
CityTampa, FL
Period6/16/136/21/13

Keywords

  • Amorphous semiconductors
  • Boron
  • Etching
  • PECVD
  • Photovoltaic cells
  • RTA

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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    Reblitz, T., Tracy, C., Dauksher, B., Herasimenka, S., & Bowden, S. (2013). P+ Emitters on n-type c-Si using rapid thermal annealing of PECVD a-Si films and aluminum metallization. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 (pp. 2257-2262). [6744927] (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2013.6744927