P+ Emitters on n-type c-Si using rapid thermal annealing of PECVD a-Si films and aluminum metallization

Tim Reblitz, Clarence Tracy, Bill Dauksher, Stanislau Herasimenka, Stuart Bowden

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present the development and characterization of n-type mono-Si photovoltaic cells with p+ emitters formed by the rapid thermal annealing of PECVD boron-doped amorphous silicon (a-Si) films. Aluminum metallization was deposited from evaporator and sputtering tool sources. The process yielded emitters of excellent uniformity (average non-uniformity of 4.4% over 40 samples) with sheet resistance ranging from 53 ω/□ to 249 ω/□ inversely dependent on the thickness of p+ film annealed. A reasonably-low post-anneal series resistance of 0.602 ω-cm2 suggests that all-aluminum metallization is sufficient for silicon photovoltaic cells of high efficiency.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2257-2262
Number of pages6
ISBN (Print)9781479932993
DOIs
StatePublished - 2013
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: Jun 16 2013Jun 21 2013

Other

Other39th IEEE Photovoltaic Specialists Conference, PVSC 2013
CountryUnited States
CityTampa, FL
Period6/16/136/21/13

Fingerprint

Rapid thermal annealing
Photovoltaic cells
Plasma enhanced chemical vapor deposition
Metallizing
Amorphous silicon
Monocrystalline silicon
Aluminum
Sheet resistance
Evaporators
Sputtering
Boron
Silicon

Keywords

  • Amorphous semiconductors
  • Boron
  • Etching
  • PECVD
  • Photovoltaic cells
  • RTA

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Reblitz, T., Tracy, C., Dauksher, B., Herasimenka, S., & Bowden, S. (2013). P+ Emitters on n-type c-Si using rapid thermal annealing of PECVD a-Si films and aluminum metallization. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 2257-2262). [6744927] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2013.6744927

P+ Emitters on n-type c-Si using rapid thermal annealing of PECVD a-Si films and aluminum metallization. / Reblitz, Tim; Tracy, Clarence; Dauksher, Bill; Herasimenka, Stanislau; Bowden, Stuart.

Conference Record of the IEEE Photovoltaic Specialists Conference. Institute of Electrical and Electronics Engineers Inc., 2013. p. 2257-2262 6744927.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Reblitz, T, Tracy, C, Dauksher, B, Herasimenka, S & Bowden, S 2013, P+ Emitters on n-type c-Si using rapid thermal annealing of PECVD a-Si films and aluminum metallization. in Conference Record of the IEEE Photovoltaic Specialists Conference., 6744927, Institute of Electrical and Electronics Engineers Inc., pp. 2257-2262, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, United States, 6/16/13. https://doi.org/10.1109/PVSC.2013.6744927
Reblitz T, Tracy C, Dauksher B, Herasimenka S, Bowden S. P+ Emitters on n-type c-Si using rapid thermal annealing of PECVD a-Si films and aluminum metallization. In Conference Record of the IEEE Photovoltaic Specialists Conference. Institute of Electrical and Electronics Engineers Inc. 2013. p. 2257-2262. 6744927 https://doi.org/10.1109/PVSC.2013.6744927
Reblitz, Tim ; Tracy, Clarence ; Dauksher, Bill ; Herasimenka, Stanislau ; Bowden, Stuart. / P+ Emitters on n-type c-Si using rapid thermal annealing of PECVD a-Si films and aluminum metallization. Conference Record of the IEEE Photovoltaic Specialists Conference. Institute of Electrical and Electronics Engineers Inc., 2013. pp. 2257-2262
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