OXYGEN PRECIPITATION IN HEAVILY BORON-DOPED CZ SILICON.

V. Stojanoff, C. A. Pimentel, D. A. Bulla, W. E. Castro, S. Hahn, Fernando Ponce

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

The diffuse X-ray scattering technique (DXS) has been employed for the study of point defects and their aggregates, and their interaction with oxygen impurities in heavily boron-doped Czochralski (Cz) Si wafers during various thermal treatments between 450 degree C - 1050 degree C. Our data have shown that: 1) the nature of predominant defects during thermal annealing at 450 degree C depends upon annealing times (for 2 and 8h anneals vacancy-type defects are predominant whereas for 32 and 128h anneals interstitial-type defects are predominant); 2) defects of interstitial nature predominate in samples annealed at 650 degree C and 800 degree C; and 3) the ramp rate influences predominant defect types for the case of 1050 degree C thermal treatments. Wafers annealed with ramping cycles exhibit defects of the interstitial type while those without ramping are of the vacancy type.

Original languageEnglish (US)
Title of host publicationProceedings - The Electrochemical Society
EditorsHoward R. Huff, Takao Abe, Bernd Kolbesen
PublisherElectrochemical Soc
Pages800-812
Number of pages13
Volume86-4
StatePublished - 1986
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'OXYGEN PRECIPITATION IN HEAVILY BORON-DOPED CZ SILICON.'. Together they form a unique fingerprint.

  • Cite this

    Stojanoff, V., Pimentel, C. A., Bulla, D. A., Castro, W. E., Hahn, S., & Ponce, F. (1986). OXYGEN PRECIPITATION IN HEAVILY BORON-DOPED CZ SILICON. In H. R. Huff, T. Abe, & B. Kolbesen (Eds.), Proceedings - The Electrochemical Society (Vol. 86-4, pp. 800-812). Electrochemical Soc.