Overview of resistive switching memory (RRAM) switching mechanism and device modeling

Shimeng Yu

doi:10.1109/ISCAS.2014.6865560

Overview of resistive switching memory (RRAM) switching mechanism and device modeling

Shimeng Yu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

27 Scopus citations

Abstract

In this paper, the recent progress on the understandings of the switching mechanisms in oxide resistive switching memory (RRAM) is reviewed. Several representative device modeling approaches including numerical discretized models, numerical continuous models and analytical compact models are discussed using HfO_x bipolar RRAM as a model system. The future challenges of RRAM modeling are finally discussed.

Original language	English (US)
Title of host publication	2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2017-2020
Number of pages	4
ISBN (Print)	9781479934324
DOIs	https://doi.org/10.1109/ISCAS.2014.6865560
State	Published - Jan 1 2014
Event	2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014 - Melbourne, VIC, Australia Duration: Jun 1 2014 → Jun 5 2014

Publication series

Name	Proceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)	0271-4310

Other

Other	2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014
Country/Territory	Australia
City	Melbourne, VIC
Period	6/1/14 → 6/5/14

Keywords

RRAM
mechanism
modeling
resistive switching

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ISCAS.2014.6865560

Cite this

Yu, S. (2014). Overview of resistive switching memory (RRAM) switching mechanism and device modeling. In 2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014 (pp. 2017-2020). Article 6865560 (Proceedings - IEEE International Symposium on Circuits and Systems). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCAS.2014.6865560

Overview of resistive switching memory (RRAM) switching mechanism and device modeling. / Yu, Shimeng.
2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 2017-2020 6865560 (Proceedings - IEEE International Symposium on Circuits and Systems).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yu, S 2014, Overview of resistive switching memory (RRAM) switching mechanism and device modeling. in 2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014., 6865560, Proceedings - IEEE International Symposium on Circuits and Systems, Institute of Electrical and Electronics Engineers Inc., pp. 2017-2020, 2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014, Melbourne, VIC, Australia, 6/1/14. https://doi.org/10.1109/ISCAS.2014.6865560

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Overview of resistive switching memory (RRAM) switching mechanism and device modeling

Abstract

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Keywords

ASJC Scopus subject areas

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