Overview of resistive switching memory (RRAM) switching mechanism and device modeling

Shimeng Yu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Scopus citations

Abstract

In this paper, the recent progress on the understandings of the switching mechanisms in oxide resistive switching memory (RRAM) is reviewed. Several representative device modeling approaches including numerical discretized models, numerical continuous models and analytical compact models are discussed using HfOx bipolar RRAM as a model system. The future challenges of RRAM modeling are finally discussed.

Original languageEnglish (US)
Title of host publication2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2017-2020
Number of pages4
ISBN (Print)9781479934324
DOIs
StatePublished - Jan 1 2014
Event2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014 - Melbourne, VIC, Australia
Duration: Jun 1 2014Jun 5 2014

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)0271-4310

Other

Other2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014
CountryAustralia
CityMelbourne, VIC
Period6/1/146/5/14

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Keywords

  • RRAM
  • mechanism
  • modeling
  • resistive switching

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Yu, S. (2014). Overview of resistive switching memory (RRAM) switching mechanism and device modeling. In 2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014 (pp. 2017-2020). [6865560] (Proceedings - IEEE International Symposium on Circuits and Systems). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCAS.2014.6865560