Oriented growth of single-crystal Ni nanowires onto amorphous SiO 2

Keith T. Chan, Jimmy J. Kan, Christopher Doran, Lu Ouyang, David Smith, Eric E. Fullerton

Research output: Contribution to journalArticle

36 Scopus citations

Abstract

Highly oriented, single-crystal Ni nanowire arrays have been synthesized atop amorphous SiO2∥Si substrates using a single-step chemical vapor deposition method in the absence of any foreign catalyst. Electron and X-ray diffraction confirm the crystalline quality of the Ni nanowires while magnetoresistance measurements probe the magnetic response and the behavior is explained using simulation results for nanoscale, single-crystal Ni. A growth mechanism involving competing chemical, energetic, and kinetic influences is presented.

Original languageEnglish (US)
Pages (from-to)5070-5075
Number of pages6
JournalNano Letters
Volume10
Issue number12
DOIs
StatePublished - Dec 8 2010

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Keywords

  • magnetic
  • Nanowires
  • nickel
  • single-crystal
  • transition-metal

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanical Engineering

Cite this

Chan, K. T., Kan, J. J., Doran, C., Ouyang, L., Smith, D., & Fullerton, E. E. (2010). Oriented growth of single-crystal Ni nanowires onto amorphous SiO 2 Nano Letters, 10(12), 5070-5075. https://doi.org/10.1021/nl103301x