Optimization of In2Se3/Si(111) heteroepitaxy to enable Bi2Se3/In2Se3 bilayer growth

Somilkumar J. Rathi; David Smith; Jeffery Drucker

doi:10.1021/cg500722n

Optimization of In₂Se₃/Si(111) heteroepitaxy to enable Bi₂Se₃/In₂Se₃ bilayer growth

Somilkumar J. Rathi, David Smith, Jeffery Drucker

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Systematic optimization of molecular beam epitaxy growth parameters enabled high quality heteroepitaxy of In₂Se₃ on Si(111) surfaces. Surfaces of the best epilayers were characterized by atomically flat terraces that extended laterally for several hundred nanometers. These terraces were separated by single quintuple layer high steps. These In₂Se ₃ films were suitable for subsequent high quality epitaxy of Bi ₂Se₃. The quality of the In₂Se ₃/Bi₂Se₃ interface was confirmed using atomic resolution transmission electron microscopy.

Original language	English (US)
Pages (from-to)	4617-4623
Number of pages	7
Journal	Crystal Growth and Design
Volume	14
Issue number	9
DOIs	https://doi.org/10.1021/cg500722n
State	Published - Sep 3 2014

ASJC Scopus subject areas

General Chemistry
General Materials Science
Condensed Matter Physics

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title = "Optimization of In2Se3/Si(111) heteroepitaxy to enable Bi2Se3/In2Se3 bilayer growth",

abstract = "Systematic optimization of molecular beam epitaxy growth parameters enabled high quality heteroepitaxy of In2Se3 on Si(111) surfaces. Surfaces of the best epilayers were characterized by atomically flat terraces that extended laterally for several hundred nanometers. These terraces were separated by single quintuple layer high steps. These In2Se 3 films were suitable for subsequent high quality epitaxy of Bi 2Se3. The quality of the In2Se 3/Bi2Se3 interface was confirmed using atomic resolution transmission electron microscopy.",

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AU - Smith, David

AU - Drucker, Jeffery

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AB - Systematic optimization of molecular beam epitaxy growth parameters enabled high quality heteroepitaxy of In2Se3 on Si(111) surfaces. Surfaces of the best epilayers were characterized by atomically flat terraces that extended laterally for several hundred nanometers. These terraces were separated by single quintuple layer high steps. These In2Se 3 films were suitable for subsequent high quality epitaxy of Bi 2Se3. The quality of the In2Se 3/Bi2Se3 interface was confirmed using atomic resolution transmission electron microscopy.

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Optimization of In₂Se₃/Si(111) heteroepitaxy to enable Bi₂Se₃/In₂Se₃ bilayer growth

Abstract

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