Optimization of GaN window layer for InGaN solar cells using polarization effect

Omkar Jani, Balakrishnam Jampana, Mohit Mehta, Hongbo Yu, Ian Ferguson, Robert Opila, Christiana Honsberg

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

The III-nitride material system offers substantial potential to develop high-efficiency solar cells. Theoretical modeling of InGaN solar cells indicate strong band bending at the top surface of p-InGaN junction caused due to piezoelectric polarization-induced charge at the strained p-GaN window interface. A counterintuitive strained n-GaN window layer is proposed, modeled and experimentally verified to improve performance of InGaN solar cells. InGaN solar cells with band gap of 2.9 eV are grown using MOCVD with p-type and n-type strained GaN window layers, and fabricated using variable metallization schemes. Fabricated solar cells using n-GaN window layers yield superior V OC and FF compared to those using p-GaN window layers. The V OC's of InGaN solar cells with n-GaN window layers are further enhanced from 1.5 V to 2 V by replacing the conventional NiOX top contact metal with Ti/Al, which also verifies the tunneling principle.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
DOIs
StatePublished - 2008
Externally publishedYes
Event33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 - San Diego, CA, United States
Duration: May 11 2008May 16 2008

Other

Other33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
CountryUnited States
CitySan Diego, CA
Period5/11/085/16/08

Fingerprint

Solar cells
Polarization
Metallorganic chemical vapor deposition
Metallizing
Nitrides
Energy gap
Metals

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Jani, O., Jampana, B., Mehta, M., Yu, H., Ferguson, I., Opila, R., & Honsberg, C. (2008). Optimization of GaN window layer for InGaN solar cells using polarization effect. In Conference Record of the IEEE Photovoltaic Specialists Conference [4922725] https://doi.org/10.1109/PVSC.2008.4922725

Optimization of GaN window layer for InGaN solar cells using polarization effect. / Jani, Omkar; Jampana, Balakrishnam; Mehta, Mohit; Yu, Hongbo; Ferguson, Ian; Opila, Robert; Honsberg, Christiana.

Conference Record of the IEEE Photovoltaic Specialists Conference. 2008. 4922725.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Jani, O, Jampana, B, Mehta, M, Yu, H, Ferguson, I, Opila, R & Honsberg, C 2008, Optimization of GaN window layer for InGaN solar cells using polarization effect. in Conference Record of the IEEE Photovoltaic Specialists Conference., 4922725, 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008, San Diego, CA, United States, 5/11/08. https://doi.org/10.1109/PVSC.2008.4922725
Jani O, Jampana B, Mehta M, Yu H, Ferguson I, Opila R et al. Optimization of GaN window layer for InGaN solar cells using polarization effect. In Conference Record of the IEEE Photovoltaic Specialists Conference. 2008. 4922725 https://doi.org/10.1109/PVSC.2008.4922725
Jani, Omkar ; Jampana, Balakrishnam ; Mehta, Mohit ; Yu, Hongbo ; Ferguson, Ian ; Opila, Robert ; Honsberg, Christiana. / Optimization of GaN window layer for InGaN solar cells using polarization effect. Conference Record of the IEEE Photovoltaic Specialists Conference. 2008.
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