Optimization of device structures for bright blue semipolar (101̄11̄1) light emitting diodes via metalorganic chemical vapor deposition

Yuji Zhao, Junichi Sonada, Ingrid Koslow, Chih Chien Pan, Hiroaki Ohta, Jun Seok Ha, Steven P. DenBaars, Shuji Nakamura

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

The device structures of semipolar (101̄11̄1) GaN blue light emitting diodes (LEDs) were optimized to achieve high power and high efficiency via metalorganic chemical vapor deposition (MOCVD). The quantum well (QW) width, barrier thickness and last barrier (LB) thickness were varied in order to optimize device performances and achieve the best growth conditions. Additional optimization methods such as Mg doping for the LB and p+ contact layers were also investigated. This study resulted in a LED with an output power of 22.75mW and an external quantum efficiency (EQE) of 39.5% at a driving current of 20 mA, which is a significant improvement over previous results.

Original languageEnglish (US)
Pages (from-to)702061-702063
Number of pages3
JournalJapanese Journal of Applied Physics
Volume49
Issue number7 PART 1
DOIs
StatePublished - Jul 1 2010
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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