Optimization of device structures for bright blue semipolar (101̄11̄1) light emitting diodes via metalorganic chemical vapor deposition

Yuji Zhao; Junichi Sonada; Ingrid Koslow; Chih Chien Pan; Hiroaki Ohta; Jun Seok Ha; Steven P. DenBaars; Shuji Nakamura

doi:10.1143/JJAP.49.070206

Optimization of device structures for bright blue semipolar (101̄11̄1) light emitting diodes via metalorganic chemical vapor deposition

Yuji Zhao, Junichi Sonada, Ingrid Koslow, Chih Chien Pan, Hiroaki Ohta, Jun Seok Ha, Steven P. DenBaars, Shuji Nakamura

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The device structures of semipolar (101̄11̄1) GaN blue light emitting diodes (LEDs) were optimized to achieve high power and high efficiency via metalorganic chemical vapor deposition (MOCVD). The quantum well (QW) width, barrier thickness and last barrier (LB) thickness were varied in order to optimize device performances and achieve the best growth conditions. Additional optimization methods such as Mg doping for the LB and p+ contact layers were also investigated. This study resulted in a LED with an output power of 22.75mW and an external quantum efficiency (EQE) of 39.5% at a driving current of 20 mA, which is a significant improvement over previous results.

Original language	English (US)
Pages (from-to)	702061-702063
Number of pages	3
Journal	Japanese Journal of Applied Physics
Volume	49
Issue number	7 PART 1
DOIs	https://doi.org/10.1143/JJAP.49.070206
State	Published - Jul 2010
Externally published	Yes

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

Access to Document

10.1143/JJAP.49.070206

Cite this

@article{69954a7c2d50498385f7d257756cd8e2,

title = "Optimization of device structures for bright blue semipolar (10{\=1}1{\=1}1) light emitting diodes via metalorganic chemical vapor deposition",

abstract = "The device structures of semipolar (10{\=1}1{\=1}1) GaN blue light emitting diodes (LEDs) were optimized to achieve high power and high efficiency via metalorganic chemical vapor deposition (MOCVD). The quantum well (QW) width, barrier thickness and last barrier (LB) thickness were varied in order to optimize device performances and achieve the best growth conditions. Additional optimization methods such as Mg doping for the LB and p+ contact layers were also investigated. This study resulted in a LED with an output power of 22.75mW and an external quantum efficiency (EQE) of 39.5% at a driving current of 20 mA, which is a significant improvement over previous results.",

author = "Yuji Zhao and Junichi Sonada and Ingrid Koslow and Pan, {Chih Chien} and Hiroaki Ohta and Ha, {Jun Seok} and DenBaars, {Steven P.} and Shuji Nakamura",

year = "2010",

month = jul,

doi = "10.1143/JJAP.49.070206",

language = "English (US)",

volume = "49",

pages = "702061--702063",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "7 PART 1",

}

TY - JOUR

T1 - Optimization of device structures for bright blue semipolar (101̄11̄1) light emitting diodes via metalorganic chemical vapor deposition

AU - Zhao, Yuji

AU - Sonada, Junichi

AU - Koslow, Ingrid

AU - Pan, Chih Chien

AU - Ohta, Hiroaki

AU - Ha, Jun Seok

AU - DenBaars, Steven P.

AU - Nakamura, Shuji

PY - 2010/7

Y1 - 2010/7

N2 - The device structures of semipolar (101̄11̄1) GaN blue light emitting diodes (LEDs) were optimized to achieve high power and high efficiency via metalorganic chemical vapor deposition (MOCVD). The quantum well (QW) width, barrier thickness and last barrier (LB) thickness were varied in order to optimize device performances and achieve the best growth conditions. Additional optimization methods such as Mg doping for the LB and p+ contact layers were also investigated. This study resulted in a LED with an output power of 22.75mW and an external quantum efficiency (EQE) of 39.5% at a driving current of 20 mA, which is a significant improvement over previous results.

AB - The device structures of semipolar (101̄11̄1) GaN blue light emitting diodes (LEDs) were optimized to achieve high power and high efficiency via metalorganic chemical vapor deposition (MOCVD). The quantum well (QW) width, barrier thickness and last barrier (LB) thickness were varied in order to optimize device performances and achieve the best growth conditions. Additional optimization methods such as Mg doping for the LB and p+ contact layers were also investigated. This study resulted in a LED with an output power of 22.75mW and an external quantum efficiency (EQE) of 39.5% at a driving current of 20 mA, which is a significant improvement over previous results.

UR - http://www.scopus.com/inward/record.url?scp=77956521934&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77956521934&partnerID=8YFLogxK

U2 - 10.1143/JJAP.49.070206

DO - 10.1143/JJAP.49.070206

M3 - Article

AN - SCOPUS:77956521934

SN - 0021-4922

VL - 49

SP - 702061

EP - 702063

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 7 PART 1

ER -

Optimization of device structures for bright blue semipolar (101̄11̄1) light emitting diodes via metalorganic chemical vapor deposition

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this