Optimal control processing to increase single wafer reactlor throughput in LPCVD

Peter E. Crouch, Lijuan Song, Konstantinos Tsakalis, Timothy S. Calet

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this paper, Optimal Control theory is applied to develop an alternative process protocol in single wafer reactor LPCVD on patterned wafer in an effort to minimize the processing time, for given final step coverage. To achieve this, the operating conditions are changed during the deposition in a prescribed manner. il simplified control model is developed from the simlultaneous one-dimensional Knudsen diffusion and chemical reaction description. The optimal control problem is formulated to find a temperature trajectory yielding the minimum processing time and its solution is computed numerically via a modified variation of extrenials method. To demonstrate the concept of optimal control CVD (OCCVD), we consider the thermall-y activated deposition of silicon dioxide (S O z) from tetraethylorthosilicate (TEOS). [Tsing the simplified control model, the estimated process time to achieve a 96% step coverage a t 98% closure with the constant rate CVD (CRCVD) strategy is 729 seconds. Under the same conditions, the optimal control CVD (OCCVD) process time is 278 seconds. Compared to CRCVD, the process time saved with OCCVD is 62%.

Original languageEnglish (US)
Title of host publication1995 IEEE/UCS/SEMI International Symposium on Semiconductor Manufacturing, ISSM 1995
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages233-238
Number of pages6
ISBN (Electronic)0780329287, 9780780329287
DOIs
StatePublished - Jan 1 1995
Event1995 IEEE/UCS/SEMI International Symposium on Semiconductor Manufacturing, ISSM 1995 - Austin, United States
Duration: Sep 17 1995Sep 19 1995

Publication series

NameIEEE International Symposium on Semiconductor Manufacturing Conference Proceedings
ISSN (Print)1523-553X

Conference

Conference1995 IEEE/UCS/SEMI International Symposium on Semiconductor Manufacturing, ISSM 1995
CountryUnited States
CityAustin
Period9/17/959/19/95

Fingerprint

Throughput
Processing
Chemical vapor deposition
Control theory
Silicon Dioxide
Chemical reactions
Silica
Trajectories
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Crouch, P. E., Song, L., Tsakalis, K., & Calet, T. S. (1995). Optimal control processing to increase single wafer reactlor throughput in LPCVD. In 1995 IEEE/UCS/SEMI International Symposium on Semiconductor Manufacturing, ISSM 1995 (pp. 233-238). [524398] (IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISSM.1995.524398

Optimal control processing to increase single wafer reactlor throughput in LPCVD. / Crouch, Peter E.; Song, Lijuan; Tsakalis, Konstantinos; Calet, Timothy S.

1995 IEEE/UCS/SEMI International Symposium on Semiconductor Manufacturing, ISSM 1995. Institute of Electrical and Electronics Engineers Inc., 1995. p. 233-238 524398 (IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Crouch, PE, Song, L, Tsakalis, K & Calet, TS 1995, Optimal control processing to increase single wafer reactlor throughput in LPCVD. in 1995 IEEE/UCS/SEMI International Symposium on Semiconductor Manufacturing, ISSM 1995., 524398, IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 233-238, 1995 IEEE/UCS/SEMI International Symposium on Semiconductor Manufacturing, ISSM 1995, Austin, United States, 9/17/95. https://doi.org/10.1109/ISSM.1995.524398
Crouch PE, Song L, Tsakalis K, Calet TS. Optimal control processing to increase single wafer reactlor throughput in LPCVD. In 1995 IEEE/UCS/SEMI International Symposium on Semiconductor Manufacturing, ISSM 1995. Institute of Electrical and Electronics Engineers Inc. 1995. p. 233-238. 524398. (IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings). https://doi.org/10.1109/ISSM.1995.524398
Crouch, Peter E. ; Song, Lijuan ; Tsakalis, Konstantinos ; Calet, Timothy S. / Optimal control processing to increase single wafer reactlor throughput in LPCVD. 1995 IEEE/UCS/SEMI International Symposium on Semiconductor Manufacturing, ISSM 1995. Institute of Electrical and Electronics Engineers Inc., 1995. pp. 233-238 (IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings).
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