TY - GEN
T1 - Optimal control processing to increase single wafer reactlor throughput in LPCVD
AU - Crouch, Peter E.
AU - Song, Lijuan
AU - Tsakalis, Konstantinos
AU - Calet, Timothy S.
N1 - Publisher Copyright:
© 1995 IEEE
PY - 1995
Y1 - 1995
N2 - In this paper, Optimal Control theory is applied to develop an alternative process protocol in single wafer reactor LPCVD on patterned wafer in an effort to minimize the processing time, for given final step coverage. To achieve this, the operating conditions are changed during the deposition in a prescribed manner. il simplified control model is developed from the simlultaneous one-dimensional Knudsen diffusion and chemical reaction description. The optimal control problem is formulated to find a temperature trajectory yielding the minimum processing time and its solution is computed numerically via a modified variation of extrenials method. To demonstrate the concept of optimal control CVD (OCCVD), we consider the thermall-y activated deposition of silicon dioxide (S O z) from tetraethylorthosilicate (TEOS). [Tsing the simplified control model, the estimated process time to achieve a 96% step coverage a t 98% closure with the constant rate CVD (CRCVD) strategy is 729 seconds. Under the same conditions, the optimal control CVD (OCCVD) process time is 278 seconds. Compared to CRCVD, the process time saved with OCCVD is 62%.
AB - In this paper, Optimal Control theory is applied to develop an alternative process protocol in single wafer reactor LPCVD on patterned wafer in an effort to minimize the processing time, for given final step coverage. To achieve this, the operating conditions are changed during the deposition in a prescribed manner. il simplified control model is developed from the simlultaneous one-dimensional Knudsen diffusion and chemical reaction description. The optimal control problem is formulated to find a temperature trajectory yielding the minimum processing time and its solution is computed numerically via a modified variation of extrenials method. To demonstrate the concept of optimal control CVD (OCCVD), we consider the thermall-y activated deposition of silicon dioxide (S O z) from tetraethylorthosilicate (TEOS). [Tsing the simplified control model, the estimated process time to achieve a 96% step coverage a t 98% closure with the constant rate CVD (CRCVD) strategy is 729 seconds. Under the same conditions, the optimal control CVD (OCCVD) process time is 278 seconds. Compared to CRCVD, the process time saved with OCCVD is 62%.
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U2 - 10.1109/ISSM.1995.524398
DO - 10.1109/ISSM.1995.524398
M3 - Conference contribution
AN - SCOPUS:77957042485
T3 - IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings
SP - 233
EP - 238
BT - 1995 IEEE/UCS/SEMI International Symposium on Semiconductor Manufacturing, ISSM 1995
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 1995 IEEE/UCS/SEMI International Symposium on Semiconductor Manufacturing, ISSM 1995
Y2 - 17 September 1995 through 19 September 1995
ER -