Optically pumped deep-ultraviolet AlGaN multi-quantum-well lasers grown by metalorganic chemical vapor deposition

Yuh Shiuan Liu, Tsung Ting Kao, Md Mahbub Satter, Zachary Lochner, Xiao Hang Li, Shyh Chiang Shen, P. Douglas Yoder, Theeradetch Detchprohm, Russell D. Dupuis, Yong Wei, Hongen Xie, Alec Fischer, Fernando Ponce

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

A 245.3 nm deep ultraviolet optically pumped AlGaN based multiple-quantum-well laser operating at room temperature is described. Epitaxial growth was performed by metalorganic chemical vapor deposition on a c-plane bulk AlN substrate at a growth temperature of ∼ 1130 °C. The wafer was fabricated into cleaved bars with a cavity length of ∼1.45 mm and the lasing threshold was determined to be 297 kW/cm2 under pulsed 193 nm ArF excimer laser excitation. A further ∼20% reduction in threshold pumping power density was observed with six pairs of SiO2/HfO 2 distributed Bragg reflector deposited at the rear side of facets.

Original languageEnglish (US)
Title of host publicationNovel In-Plane Semiconductor Lasers XIII
PublisherSPIE
ISBN (Print)9780819499158
DOIs
StatePublished - Jan 1 2014
EventNovel In-Plane Semiconductor Lasers XIII - San Francisco, CA, United States
Duration: Feb 3 2014Feb 6 2014

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9002
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

OtherNovel In-Plane Semiconductor Lasers XIII
CountryUnited States
CitySan Francisco, CA
Period2/3/142/6/14

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Keywords

  • III-V semiconductors
  • Metalorganic chemical vapor deposition
  • deep ultraviolet
  • lasers
  • optical pumping

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Liu, Y. S., Kao, T. T., Satter, M. M., Lochner, Z., Li, X. H., Shen, S. C., Yoder, P. D., Detchprohm, T., Dupuis, R. D., Wei, Y., Xie, H., Fischer, A., & Ponce, F. (2014). Optically pumped deep-ultraviolet AlGaN multi-quantum-well lasers grown by metalorganic chemical vapor deposition. In Novel In-Plane Semiconductor Lasers XIII [90020H] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9002). SPIE. https://doi.org/10.1117/12.2036835