Optically pumped deep-ultraviolet AlGaN multi-quantum-well lasers grown by metalorganic chemical vapor deposition

Yuh Shiuan Liu, Tsung Ting Kao, Md Mahbub Satter, Zachary Lochner, Xiao Hang Li, Shyh Chiang Shen, P. Douglas Yoder, Theeradetch Detchprohm, Russell D. Dupuis, Yong Wei, Hongen Xie, Alec Fischer, Fernando Ponce

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A 245.3 nm deep ultraviolet optically pumped AlGaN based multiple-quantum-well laser operating at room temperature is described. Epitaxial growth was performed by metalorganic chemical vapor deposition on a c-plane bulk AlN substrate at a growth temperature of ∼ 1130 °C. The wafer was fabricated into cleaved bars with a cavity length of ∼1.45 mm and the lasing threshold was determined to be 297 kW/cm2 under pulsed 193 nm ArF excimer laser excitation. A further ∼20% reduction in threshold pumping power density was observed with six pairs of SiO2/HfO 2 distributed Bragg reflector deposited at the rear side of facets.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSPIE
Volume9002
ISBN (Print)9780819499158
DOIs
StatePublished - 2014
EventNovel In-Plane Semiconductor Lasers XIII - San Francisco, CA, United States
Duration: Feb 3 2014Feb 6 2014

Other

OtherNovel In-Plane Semiconductor Lasers XIII
CountryUnited States
CitySan Francisco, CA
Period2/3/142/6/14

Fingerprint

AlGaN
Distributed Bragg reflectors
Quantum well lasers
Laser excitation
Chemical Vapor Deposition
Metallorganic chemical vapor deposition
Growth temperature
Excimer lasers
quantum well lasers
Quantum Well
Epitaxial growth
Ultraviolet
Semiconductor quantum wells
metalorganic chemical vapor deposition
Laser
Epitaxial Growth
Aluminum Nitride
Excimer Laser
thresholds
SiO2

Keywords

  • deep ultraviolet
  • III-V semiconductors
  • lasers
  • Metalorganic chemical vapor deposition
  • optical pumping

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Liu, Y. S., Kao, T. T., Satter, M. M., Lochner, Z., Li, X. H., Shen, S. C., ... Ponce, F. (2014). Optically pumped deep-ultraviolet AlGaN multi-quantum-well lasers grown by metalorganic chemical vapor deposition. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 9002). [90020H] SPIE. https://doi.org/10.1117/12.2036835

Optically pumped deep-ultraviolet AlGaN multi-quantum-well lasers grown by metalorganic chemical vapor deposition. / Liu, Yuh Shiuan; Kao, Tsung Ting; Satter, Md Mahbub; Lochner, Zachary; Li, Xiao Hang; Shen, Shyh Chiang; Yoder, P. Douglas; Detchprohm, Theeradetch; Dupuis, Russell D.; Wei, Yong; Xie, Hongen; Fischer, Alec; Ponce, Fernando.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 9002 SPIE, 2014. 90020H.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Liu, YS, Kao, TT, Satter, MM, Lochner, Z, Li, XH, Shen, SC, Yoder, PD, Detchprohm, T, Dupuis, RD, Wei, Y, Xie, H, Fischer, A & Ponce, F 2014, Optically pumped deep-ultraviolet AlGaN multi-quantum-well lasers grown by metalorganic chemical vapor deposition. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 9002, 90020H, SPIE, Novel In-Plane Semiconductor Lasers XIII, San Francisco, CA, United States, 2/3/14. https://doi.org/10.1117/12.2036835
Liu YS, Kao TT, Satter MM, Lochner Z, Li XH, Shen SC et al. Optically pumped deep-ultraviolet AlGaN multi-quantum-well lasers grown by metalorganic chemical vapor deposition. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 9002. SPIE. 2014. 90020H https://doi.org/10.1117/12.2036835
Liu, Yuh Shiuan ; Kao, Tsung Ting ; Satter, Md Mahbub ; Lochner, Zachary ; Li, Xiao Hang ; Shen, Shyh Chiang ; Yoder, P. Douglas ; Detchprohm, Theeradetch ; Dupuis, Russell D. ; Wei, Yong ; Xie, Hongen ; Fischer, Alec ; Ponce, Fernando. / Optically pumped deep-ultraviolet AlGaN multi-quantum-well lasers grown by metalorganic chemical vapor deposition. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 9002 SPIE, 2014.
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abstract = "A 245.3 nm deep ultraviolet optically pumped AlGaN based multiple-quantum-well laser operating at room temperature is described. Epitaxial growth was performed by metalorganic chemical vapor deposition on a c-plane bulk AlN substrate at a growth temperature of ∼ 1130 °C. The wafer was fabricated into cleaved bars with a cavity length of ∼1.45 mm and the lasing threshold was determined to be 297 kW/cm2 under pulsed 193 nm ArF excimer laser excitation. A further ∼20{\%} reduction in threshold pumping power density was observed with six pairs of SiO2/HfO 2 distributed Bragg reflector deposited at the rear side of facets.",
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AU - Kao, Tsung Ting

AU - Satter, Md Mahbub

AU - Lochner, Zachary

AU - Li, Xiao Hang

AU - Shen, Shyh Chiang

AU - Yoder, P. Douglas

AU - Detchprohm, Theeradetch

AU - Dupuis, Russell D.

AU - Wei, Yong

AU - Xie, Hongen

AU - Fischer, Alec

AU - Ponce, Fernando

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