Optical valley Hall effect for highly valley-coherent exciton-polaritons in an atomically thin semiconductor

Nils Lundt, Łukasz Dusanowski, Evgeny Sedov, Petr Stepanov, Mikhail M. Glazov, Sebastian Klembt, Martin Klaas, Johannes Beierlein, Ying Qin, Sefaattin Tongay, Maxime Richard, Alexey V. Kavokin, Sven Höfling, Christian Schneider

Research output: Contribution to journalArticle

Abstract

Spin–orbit coupling is a fundamental mechanism that connects the spin of a charge carrier with its momentum. In the optical domain, an analogous synthetic spin–orbit coupling is accessible by engineering optical anisotropies in photonic materials. Both yield the possibility of creating devices that directly harness spin and polarization as information carriers. Atomically thin transition metal dichalcogenides promise intrinsic spin-valley Hall features for free carriers, excitons and photons. Here we demonstrate spin- and valley-selective propagation of exciton-polaritons in a monolayer of MoSe2 that is strongly coupled to a microcavity photon mode. In a wire-like device we trace the flow and helicity of exciton-polaritons expanding along its channel. By exciting a coherent superposition of K and K′ tagged polaritons, we observe valley-selective expansion of the polariton cloud without either an external magnetic field or coherent Rayleigh scattering. The observed optical valley Hall effect occurs on a macroscopic scale, offering the potential for applications in spin-valley-locked photonic devices.

Original languageEnglish (US)
Pages (from-to)770-775
Number of pages6
JournalNature nanotechnology
Volume14
Issue number8
DOIs
StatePublished - Aug 1 2019

Fingerprint

Hall effect
Excitons
polaritons
valleys
excitons
Semiconductor materials
Photons
Coherent scattering
Optical anisotropy
Rayleigh scattering
Photonic devices
Microcavities
Charge carriers
Photonics
Transition metals
photonics
Monolayers
Momentum
harnesses
Wire

ASJC Scopus subject areas

  • Bioengineering
  • Atomic and Molecular Physics, and Optics
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Lundt, N., Dusanowski, Ł., Sedov, E., Stepanov, P., Glazov, M. M., Klembt, S., ... Schneider, C. (2019). Optical valley Hall effect for highly valley-coherent exciton-polaritons in an atomically thin semiconductor. Nature nanotechnology, 14(8), 770-775. https://doi.org/10.1038/s41565-019-0492-0

Optical valley Hall effect for highly valley-coherent exciton-polaritons in an atomically thin semiconductor. / Lundt, Nils; Dusanowski, Łukasz; Sedov, Evgeny; Stepanov, Petr; Glazov, Mikhail M.; Klembt, Sebastian; Klaas, Martin; Beierlein, Johannes; Qin, Ying; Tongay, Sefaattin; Richard, Maxime; Kavokin, Alexey V.; Höfling, Sven; Schneider, Christian.

In: Nature nanotechnology, Vol. 14, No. 8, 01.08.2019, p. 770-775.

Research output: Contribution to journalArticle

Lundt, N, Dusanowski, Ł, Sedov, E, Stepanov, P, Glazov, MM, Klembt, S, Klaas, M, Beierlein, J, Qin, Y, Tongay, S, Richard, M, Kavokin, AV, Höfling, S & Schneider, C 2019, 'Optical valley Hall effect for highly valley-coherent exciton-polaritons in an atomically thin semiconductor', Nature nanotechnology, vol. 14, no. 8, pp. 770-775. https://doi.org/10.1038/s41565-019-0492-0
Lundt, Nils ; Dusanowski, Łukasz ; Sedov, Evgeny ; Stepanov, Petr ; Glazov, Mikhail M. ; Klembt, Sebastian ; Klaas, Martin ; Beierlein, Johannes ; Qin, Ying ; Tongay, Sefaattin ; Richard, Maxime ; Kavokin, Alexey V. ; Höfling, Sven ; Schneider, Christian. / Optical valley Hall effect for highly valley-coherent exciton-polaritons in an atomically thin semiconductor. In: Nature nanotechnology. 2019 ; Vol. 14, No. 8. pp. 770-775.
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