Optical spectroscopy of Si-related donor and acceptor levels in Si-doped GaN grown by hydride vapor phase epitaxy

J. Jayapalan, Brian Skromme, R. P. Vaudo, V. M. Phanse

Research output: Contribution to journalArticle

72 Citations (Scopus)

Abstract

The optical properties of n-type GaN grown by hydride vapor phase epitaxy, with intentional Si doping levels ranging from nominally undoped to ND-NA=4×1017cm-3, are investigated using low temperature photoluminescence. We identify free and neutral donor-bound exciton transitions and two-electron satellites (TES) at 1.7 K. The energy difference between the principal neutral donor-bound exciton peak and its TES yields a Si donor binding energy of 22 meV. The intensity of the Si-related TES increases with increasing Si concentration. The Si donor is much shallower than the two residual donors, which have binding energies of 28 and 34 meV. This result suggests that the main residual donors in this material (and possibly in many layers grown by metal organic chemical vapor deposition and metal organic molecular beam epitaxy as well) are not Si. Silicon doping also introduces an acceptor level with a binding energy of about 224 meV.

Original languageEnglish (US)
Pages (from-to)1188-1190
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number9
DOIs
StatePublished - 1998

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vapor phase epitaxy
hydrides
binding energy
excitons
spectroscopy
electrons
metalorganic chemical vapor deposition
molecular beam epitaxy
photoluminescence
optical properties
silicon
metals
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Optical spectroscopy of Si-related donor and acceptor levels in Si-doped GaN grown by hydride vapor phase epitaxy. / Jayapalan, J.; Skromme, Brian; Vaudo, R. P.; Phanse, V. M.

In: Applied Physics Letters, Vol. 73, No. 9, 1998, p. 1188-1190.

Research output: Contribution to journalArticle

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