Optical spectroscopy of Bi containing semiconductors

A. Chernikov; S. Chatterjee; M. Koch; C. Bückers; S. W. Koch; S. Imhof; A. Thränhardt; Xianfeng Lu; S. R. Johnson; D. A. Beaton; T. Tiedje

doi:10.1364/cleo.2010.jwa94

Optical spectroscopy of Bi containing semiconductors

A. Chernikov, S. Chatterjee, M. Koch, C. Bückers, S. W. Koch, S. Imhof, A. Thränhardt, Xianfeng Lu, S. R. Johnson, D. A. Beaton, T. Tiedje

Engineering, Ira A. Fulton Schools of (IAFSE)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The novel semiconductor material Ga(AsBi) is investigated by the time-resolved photoluminescence as function of lattice temperature, excitation density, and excitation energy. Disorder and localization effects are found to strongly influence the spectra and the dynamics.

Original language	English (US)
Title of host publication	Conference on Lasers and Electro-Optics, CLEO 2010
Publisher	Optical Society of America (OSA)
ISBN (Print)	9781557528896
DOIs	https://doi.org/10.1364/cleo.2010.jwa94
State	Published - 2010
Event	Conference on Lasers and Electro-Optics, CLEO 2010 - San Jose, CA, United States Duration: May 16 2010 → May 21 2010

Publication series

Name	Optics InfoBase Conference Papers
ISSN (Electronic)	2162-2701

Other

Other	Conference on Lasers and Electro-Optics, CLEO 2010
Country/Territory	United States
City	San Jose, CA
Period	5/16/10 → 5/21/10

ASJC Scopus subject areas

Instrumentation
Atomic and Molecular Physics, and Optics

Access to Document

10.1364/cleo.2010.jwa94

Cite this

Chernikov, A., Chatterjee, S., Koch, M., Bückers, C., Koch, S. W., Imhof, S., Thränhardt, A., Lu, X., Johnson, S. R., Beaton, D. A., & Tiedje, T. (2010). Optical spectroscopy of Bi containing semiconductors. In Conference on Lasers and Electro-Optics, CLEO 2010 (Optics InfoBase Conference Papers). Optical Society of America (OSA). https://doi.org/10.1364/cleo.2010.jwa94

Chernikov, A, Chatterjee, S, Koch, M, Bückers, C, Koch, SW, Imhof, S, Thränhardt, A, Lu, X, Johnson, SR, Beaton, DA & Tiedje, T 2010, Optical spectroscopy of Bi containing semiconductors. in Conference on Lasers and Electro-Optics, CLEO 2010. Optics InfoBase Conference Papers, Optical Society of America (OSA), Conference on Lasers and Electro-Optics, CLEO 2010, San Jose, CA, United States, 5/16/10. https://doi.org/10.1364/cleo.2010.jwa94

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title = "Optical spectroscopy of Bi containing semiconductors",

abstract = "The novel semiconductor material Ga(AsBi) is investigated by the time-resolved photoluminescence as function of lattice temperature, excitation density, and excitation energy. Disorder and localization effects are found to strongly influence the spectra and the dynamics.",

author = "A. Chernikov and S. Chatterjee and M. Koch and C. B{\"u}ckers and Koch, {S. W.} and S. Imhof and A. Thr{\"a}nhardt and Xianfeng Lu and Johnson, {S. R.} and Beaton, {D. A.} and T. Tiedje",

year = "2010",

doi = "10.1364/cleo.2010.jwa94",

language = "English (US)",

isbn = "9781557528896",

series = "Optics InfoBase Conference Papers",

publisher = "Optical Society of America (OSA)",

booktitle = "Conference on Lasers and Electro-Optics, CLEO 2010",

note = "Conference on Lasers and Electro-Optics, CLEO 2010 ; Conference date: 16-05-2010 Through 21-05-2010",

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TY - GEN

T1 - Optical spectroscopy of Bi containing semiconductors

AU - Chernikov, A.

AU - Chatterjee, S.

AU - Koch, M.

AU - Bückers, C.

AU - Koch, S. W.

AU - Imhof, S.

AU - Thränhardt, A.

AU - Lu, Xianfeng

AU - Johnson, S. R.

AU - Beaton, D. A.

AU - Tiedje, T.

PY - 2010

Y1 - 2010

N2 - The novel semiconductor material Ga(AsBi) is investigated by the time-resolved photoluminescence as function of lattice temperature, excitation density, and excitation energy. Disorder and localization effects are found to strongly influence the spectra and the dynamics.

AB - The novel semiconductor material Ga(AsBi) is investigated by the time-resolved photoluminescence as function of lattice temperature, excitation density, and excitation energy. Disorder and localization effects are found to strongly influence the spectra and the dynamics.

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DO - 10.1364/cleo.2010.jwa94

M3 - Conference contribution

AN - SCOPUS:85088344981

SN - 9781557528896

T3 - Optics InfoBase Conference Papers

BT - Conference on Lasers and Electro-Optics, CLEO 2010

PB - Optical Society of America (OSA)

T2 - Conference on Lasers and Electro-Optics, CLEO 2010

Y2 - 16 May 2010 through 21 May 2010

ER -

Optical spectroscopy of Bi containing semiconductors

Abstract

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ASJC Scopus subject areas

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