Abstract

CdTe/MgCdTe double heterostructures with n-type indium doping concentrations, varied from 1×1016 cm-3 to 1×1018 cm-3, have been grown on InSb substrates using MBE. Capacitance voltage measurements show that carriers are 100% ionized for the doping concentrations in this range. The carrier lifetime decreases with increasing doping concentration, from 0.73 μs for an unintentionally doped sample to sub-nanosecond for a 1×1018 cm-3 doped sample, due to the decrease of both radiative and non-radiative lifetimes. The strongest photoluminescence intensity is observed when the doping concentration is 1×1017 cm-3. It is found that beyond this doping level, optical transitions related to defect states appear below the energy level of band to band transition.

Original languageEnglish (US)
Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479979448
DOIs
StatePublished - Dec 14 2015
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: Jun 14 2015Jun 19 2015

Other

Other42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
CountryUnited States
CityNew Orleans
Period6/14/156/19/15

Fingerprint

Indium
Heterojunctions
Optical properties
Doping (additives)
Optical transitions
Capacitance measurement
Carrier lifetime
Voltage measurement
Electron transitions
Molecular beam epitaxy
Electron energy levels
Photoluminescence
Defects
Substrates

Keywords

  • carrier lifetime
  • CdTe
  • doping
  • MBE
  • MgCdTe
  • solar cells

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Zhao, X. H., Liu, S., Zhao, Y., Campbell, C. M., Lassise, M. B., Kuo, Y. S., & Zhang, Y-H. (2015). Optical properties of indium-doped CdTe/MgCdTe double heterostructures. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 [7356358] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2015.7356358

Optical properties of indium-doped CdTe/MgCdTe double heterostructures. / Zhao, Xin Hao; Liu, Shi; Zhao, Yuan; Campbell, Calli M.; Lassise, Maxwell B.; Kuo, Ying Shen; Zhang, Yong-Hang.

2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7356358.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zhao, XH, Liu, S, Zhao, Y, Campbell, CM, Lassise, MB, Kuo, YS & Zhang, Y-H 2015, Optical properties of indium-doped CdTe/MgCdTe double heterostructures. in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015., 7356358, Institute of Electrical and Electronics Engineers Inc., 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States, 6/14/15. https://doi.org/10.1109/PVSC.2015.7356358
Zhao XH, Liu S, Zhao Y, Campbell CM, Lassise MB, Kuo YS et al. Optical properties of indium-doped CdTe/MgCdTe double heterostructures. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7356358 https://doi.org/10.1109/PVSC.2015.7356358
Zhao, Xin Hao ; Liu, Shi ; Zhao, Yuan ; Campbell, Calli M. ; Lassise, Maxwell B. ; Kuo, Ying Shen ; Zhang, Yong-Hang. / Optical properties of indium-doped CdTe/MgCdTe double heterostructures. 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015.
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abstract = "CdTe/MgCdTe double heterostructures with n-type indium doping concentrations, varied from 1×1016 cm-3 to 1×1018 cm-3, have been grown on InSb substrates using MBE. Capacitance voltage measurements show that carriers are 100{\%} ionized for the doping concentrations in this range. The carrier lifetime decreases with increasing doping concentration, from 0.73 μs for an unintentionally doped sample to sub-nanosecond for a 1×1018 cm-3 doped sample, due to the decrease of both radiative and non-radiative lifetimes. The strongest photoluminescence intensity is observed when the doping concentration is 1×1017 cm-3. It is found that beyond this doping level, optical transitions related to defect states appear below the energy level of band to band transition.",
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AU - Zhang, Yong-Hang

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