Optical properties of indium-doped CdTe/MgCdTe double heterostructures

Xin Hao Zhao; Shi Liu; Yuan Zhao; Calli M. Campbell; Maxwell B. Lassise; Ying Shen Kuo; Yong-Hang Zhang

doi:10.1109/PVSC.2015.7356358

Optical properties of indium-doped CdTe/MgCdTe double heterostructures

Xin Hao Zhao, Shi Liu, Yuan Zhao, Calli M. Campbell, Maxwell B. Lassise, Ying Shen Kuo, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

CdTe/MgCdTe double heterostructures with n-type indium doping concentrations, varied from 1×1016 cm-3 to 1×1018 cm-3, have been grown on InSb substrates using MBE. Capacitance voltage measurements show that carriers are 100% ionized for the doping concentrations in this range. The carrier lifetime decreases with increasing doping concentration, from 0.73 μs for an unintentionally doped sample to sub-nanosecond for a 1×1018 cm-3 doped sample, due to the decrease of both radiative and non-radiative lifetimes. The strongest photoluminescence intensity is observed when the doping concentration is 1×1017 cm-3. It is found that beyond this doping level, optical transitions related to defect states appear below the energy level of band to band transition.

Original language	English (US)
Title of host publication	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781479979448
DOIs	https://doi.org/10.1109/PVSC.2015.7356358
State	Published - Dec 14 2015
Event	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: Jun 14 2015 → Jun 19 2015

Other

Other	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/Territory	United States
City	New Orleans
Period	6/14/15 → 6/19/15

Keywords

carrier lifetime
CdTe
doping
MBE
MgCdTe
solar cells

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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10.1109/PVSC.2015.7356358

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Zhao, XH, Liu, S, Zhao, Y, Campbell, CM, Lassise, MB, Kuo, YS & Zhang, Y-H 2015, Optical properties of indium-doped CdTe/MgCdTe double heterostructures. in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015., 7356358, Institute of Electrical and Electronics Engineers Inc., 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States, 6/14/15. https://doi.org/10.1109/PVSC.2015.7356358

@inproceedings{f77ef49ada3049339560ea0d13272e95,

title = "Optical properties of indium-doped CdTe/MgCdTe double heterostructures",

abstract = "CdTe/MgCdTe double heterostructures with n-type indium doping concentrations, varied from 1×1016 cm-3 to 1×1018 cm-3, have been grown on InSb substrates using MBE. Capacitance voltage measurements show that carriers are 100% ionized for the doping concentrations in this range. The carrier lifetime decreases with increasing doping concentration, from 0.73 μs for an unintentionally doped sample to sub-nanosecond for a 1×1018 cm-3 doped sample, due to the decrease of both radiative and non-radiative lifetimes. The strongest photoluminescence intensity is observed when the doping concentration is 1×1017 cm-3. It is found that beyond this doping level, optical transitions related to defect states appear below the energy level of band to band transition.",

keywords = "carrier lifetime, CdTe, doping, MBE, MgCdTe, solar cells",

author = "Zhao, {Xin Hao} and Shi Liu and Yuan Zhao and Campbell, {Calli M.} and Lassise, {Maxwell B.} and Kuo, {Ying Shen} and Yong-Hang Zhang",

year = "2015",

month = dec,

day = "14",

doi = "10.1109/PVSC.2015.7356358",

language = "English (US)",

isbn = "9781479979448",

booktitle = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 ; Conference date: 14-06-2015 Through 19-06-2015",

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TY - GEN

T1 - Optical properties of indium-doped CdTe/MgCdTe double heterostructures

AU - Zhao, Xin Hao

AU - Liu, Shi

AU - Zhao, Yuan

AU - Campbell, Calli M.

AU - Lassise, Maxwell B.

AU - Kuo, Ying Shen

AU - Zhang, Yong-Hang

PY - 2015/12/14

Y1 - 2015/12/14

N2 - CdTe/MgCdTe double heterostructures with n-type indium doping concentrations, varied from 1×1016 cm-3 to 1×1018 cm-3, have been grown on InSb substrates using MBE. Capacitance voltage measurements show that carriers are 100% ionized for the doping concentrations in this range. The carrier lifetime decreases with increasing doping concentration, from 0.73 μs for an unintentionally doped sample to sub-nanosecond for a 1×1018 cm-3 doped sample, due to the decrease of both radiative and non-radiative lifetimes. The strongest photoluminescence intensity is observed when the doping concentration is 1×1017 cm-3. It is found that beyond this doping level, optical transitions related to defect states appear below the energy level of band to band transition.

AB - CdTe/MgCdTe double heterostructures with n-type indium doping concentrations, varied from 1×1016 cm-3 to 1×1018 cm-3, have been grown on InSb substrates using MBE. Capacitance voltage measurements show that carriers are 100% ionized for the doping concentrations in this range. The carrier lifetime decreases with increasing doping concentration, from 0.73 μs for an unintentionally doped sample to sub-nanosecond for a 1×1018 cm-3 doped sample, due to the decrease of both radiative and non-radiative lifetimes. The strongest photoluminescence intensity is observed when the doping concentration is 1×1017 cm-3. It is found that beyond this doping level, optical transitions related to defect states appear below the energy level of band to band transition.

KW - carrier lifetime

KW - CdTe

KW - doping

KW - MBE

KW - MgCdTe

KW - solar cells

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U2 - 10.1109/PVSC.2015.7356358

DO - 10.1109/PVSC.2015.7356358

M3 - Conference contribution

AN - SCOPUS:84961627269

SN - 9781479979448

BT - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015

Y2 - 14 June 2015 through 19 June 2015

ER -

Optical properties of indium-doped CdTe/MgCdTe double heterostructures

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Keywords

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