@inproceedings{f77ef49ada3049339560ea0d13272e95,
title = "Optical properties of indium-doped CdTe/MgCdTe double heterostructures",
abstract = "CdTe/MgCdTe double heterostructures with n-type indium doping concentrations, varied from 1×1016 cm-3 to 1×1018 cm-3, have been grown on InSb substrates using MBE. Capacitance voltage measurements show that carriers are 100% ionized for the doping concentrations in this range. The carrier lifetime decreases with increasing doping concentration, from 0.73 μs for an unintentionally doped sample to sub-nanosecond for a 1×1018 cm-3 doped sample, due to the decrease of both radiative and non-radiative lifetimes. The strongest photoluminescence intensity is observed when the doping concentration is 1×1017 cm-3. It is found that beyond this doping level, optical transitions related to defect states appear below the energy level of band to band transition.",
keywords = "CdTe, MBE, MgCdTe, carrier lifetime, doping, solar cells",
author = "Zhao, {Xin Hao} and Shi Liu and Yuan Zhao and Campbell, {Calli M.} and Lassise, {Maxwell B.} and Kuo, {Ying Shen} and Yong-Hang Zhang",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 ; Conference date: 14-06-2015 Through 19-06-2015",
year = "2015",
month = dec,
day = "14",
doi = "10.1109/PVSC.2015.7356358",
language = "English (US)",
series = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",
}