On the stochastic nature of resistive switching in metal oxide RRAM: Physical modeling, Monte Carlo simulation, and experimental characterization

Shimeng Yu, Ximeng Guan, H. S Philip Wong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

87 Citations (Scopus)

Abstract

The origin of switching parameter variations in metal oxide resistive switching random access memory (RRAM) is studied. The stochastic formation/rupture of the conductive filaments (CFs) is modeled and incorporated with a trap-assisted-tunneling (TAT) current solver. The experimental DC I-V characteristics and pulse transient waveform featuring the current fluctuation during the reset process are reproduced by Monte Carlo simulations. It is found that the wide spread of high resistance states (HRS) are due to the variation of tunneling gap distances, and the tail bits of the HRS are due to the newly generated traps near the electrode at the end of the reset process. To solve the over-reset and tail bits problems, a device structure with active/buffer bi-layer oxides combined with the reset-verify technique is proposed. Our model is corroborated by measured experimental data of HfO x based RRAM.

Original languageEnglish (US)
Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
StatePublished - 2011
Externally publishedYes
Event2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States
Duration: Dec 5 2011Dec 7 2011

Other

Other2011 IEEE International Electron Devices Meeting, IEDM 2011
CountryUnited States
CityWashington, DC
Period12/5/1112/7/11

Fingerprint

random access memory
Oxides
metal oxides
Metals
high resistance
Data storage equipment
traps
simulation
filaments
Buffers
waveforms
buffers
direct current
Electrodes
electrodes
oxides
pulses
Monte Carlo simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

On the stochastic nature of resistive switching in metal oxide RRAM : Physical modeling, Monte Carlo simulation, and experimental characterization. / Yu, Shimeng; Guan, Ximeng; Wong, H. S Philip.

Technical Digest - International Electron Devices Meeting, IEDM. 2011. 6131572.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yu, S, Guan, X & Wong, HSP 2011, On the stochastic nature of resistive switching in metal oxide RRAM: Physical modeling, Monte Carlo simulation, and experimental characterization. in Technical Digest - International Electron Devices Meeting, IEDM., 6131572, 2011 IEEE International Electron Devices Meeting, IEDM 2011, Washington, DC, United States, 12/5/11. https://doi.org/10.1109/IEDM.2011.6131572
Yu, Shimeng ; Guan, Ximeng ; Wong, H. S Philip. / On the stochastic nature of resistive switching in metal oxide RRAM : Physical modeling, Monte Carlo simulation, and experimental characterization. Technical Digest - International Electron Devices Meeting, IEDM. 2011.
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