On the stochastic nature of resistive switching in metal oxide RRAM: Physical modeling, Monte Carlo simulation, and experimental characterization

Shimeng Yu; Ximeng Guan; H. S.Philip Wong

doi:10.1109/IEDM.2011.6131572

On the stochastic nature of resistive switching in metal oxide RRAM: Physical modeling, Monte Carlo simulation, and experimental characterization

Shimeng Yu, Ximeng Guan, H. S.Philip Wong

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

154 Scopus citations

Abstract

The origin of switching parameter variations in metal oxide resistive switching random access memory (RRAM) is studied. The stochastic formation/rupture of the conductive filaments (CFs) is modeled and incorporated with a trap-assisted-tunneling (TAT) current solver. The experimental DC I-V characteristics and pulse transient waveform featuring the current fluctuation during the reset process are reproduced by Monte Carlo simulations. It is found that the wide spread of high resistance states (HRS) are due to the variation of tunneling gap distances, and the tail bits of the HRS are due to the newly generated traps near the electrode at the end of the reset process. To solve the over-reset and tail bits problems, a device structure with active/buffer bi-layer oxides combined with the reset-verify technique is proposed. Our model is corroborated by measured experimental data of HfO _x based RRAM.

Original language	English (US)
Title of host publication	2011 International Electron Devices Meeting, IEDM 2011
Pages	17.3.1-17.3.4
DOIs	https://doi.org/10.1109/IEDM.2011.6131572
State	Published - 2011
Externally published	Yes
Event	2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States Duration: Dec 5 2011 → Dec 7 2011

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2011 IEEE International Electron Devices Meeting, IEDM 2011
Country/Territory	United States
City	Washington, DC
Period	12/5/11 → 12/7/11

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2011.6131572

Cite this

Yu, S., Guan, X., & Wong, H. S. P. (2011). On the stochastic nature of resistive switching in metal oxide RRAM: Physical modeling, Monte Carlo simulation, and experimental characterization. In 2011 International Electron Devices Meeting, IEDM 2011 (pp. 17.3.1-17.3.4). Article 6131572 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2011.6131572

On the stochastic nature of resistive switching in metal oxide RRAM: Physical modeling, Monte Carlo simulation, and experimental characterization. / Yu, Shimeng; Guan, Ximeng; Wong, H. S.Philip.
2011 International Electron Devices Meeting, IEDM 2011. 2011. p. 17.3.1-17.3.4 6131572 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yu, S, Guan, X & Wong, HSP 2011, On the stochastic nature of resistive switching in metal oxide RRAM: Physical modeling, Monte Carlo simulation, and experimental characterization. in 2011 International Electron Devices Meeting, IEDM 2011., 6131572, Technical Digest - International Electron Devices Meeting, IEDM, pp. 17.3.1-17.3.4, 2011 IEEE International Electron Devices Meeting, IEDM 2011, Washington, DC, United States, 12/5/11. https://doi.org/10.1109/IEDM.2011.6131572

@inproceedings{824dd898abd94bc3b3059348aeb12363,

title = "On the stochastic nature of resistive switching in metal oxide RRAM: Physical modeling, Monte Carlo simulation, and experimental characterization",

abstract = "The origin of switching parameter variations in metal oxide resistive switching random access memory (RRAM) is studied. The stochastic formation/rupture of the conductive filaments (CFs) is modeled and incorporated with a trap-assisted-tunneling (TAT) current solver. The experimental DC I-V characteristics and pulse transient waveform featuring the current fluctuation during the reset process are reproduced by Monte Carlo simulations. It is found that the wide spread of high resistance states (HRS) are due to the variation of tunneling gap distances, and the tail bits of the HRS are due to the newly generated traps near the electrode at the end of the reset process. To solve the over-reset and tail bits problems, a device structure with active/buffer bi-layer oxides combined with the reset-verify technique is proposed. Our model is corroborated by measured experimental data of HfO x based RRAM.",

author = "Shimeng Yu and Ximeng Guan and Wong, {H. S.Philip}",

year = "2011",

doi = "10.1109/IEDM.2011.6131572",

language = "English (US)",

isbn = "9781457705052",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "17.3.1--17.3.4",

booktitle = "2011 International Electron Devices Meeting, IEDM 2011",

note = "2011 IEEE International Electron Devices Meeting, IEDM 2011 ; Conference date: 05-12-2011 Through 07-12-2011",

}

TY - GEN

T1 - On the stochastic nature of resistive switching in metal oxide RRAM

T2 - 2011 IEEE International Electron Devices Meeting, IEDM 2011

AU - Yu, Shimeng

AU - Guan, Ximeng

AU - Wong, H. S.Philip

PY - 2011

Y1 - 2011

N2 - The origin of switching parameter variations in metal oxide resistive switching random access memory (RRAM) is studied. The stochastic formation/rupture of the conductive filaments (CFs) is modeled and incorporated with a trap-assisted-tunneling (TAT) current solver. The experimental DC I-V characteristics and pulse transient waveform featuring the current fluctuation during the reset process are reproduced by Monte Carlo simulations. It is found that the wide spread of high resistance states (HRS) are due to the variation of tunneling gap distances, and the tail bits of the HRS are due to the newly generated traps near the electrode at the end of the reset process. To solve the over-reset and tail bits problems, a device structure with active/buffer bi-layer oxides combined with the reset-verify technique is proposed. Our model is corroborated by measured experimental data of HfO x based RRAM.

AB - The origin of switching parameter variations in metal oxide resistive switching random access memory (RRAM) is studied. The stochastic formation/rupture of the conductive filaments (CFs) is modeled and incorporated with a trap-assisted-tunneling (TAT) current solver. The experimental DC I-V characteristics and pulse transient waveform featuring the current fluctuation during the reset process are reproduced by Monte Carlo simulations. It is found that the wide spread of high resistance states (HRS) are due to the variation of tunneling gap distances, and the tail bits of the HRS are due to the newly generated traps near the electrode at the end of the reset process. To solve the over-reset and tail bits problems, a device structure with active/buffer bi-layer oxides combined with the reset-verify technique is proposed. Our model is corroborated by measured experimental data of HfO x based RRAM.

UR - http://www.scopus.com/inward/record.url?scp=84856999285&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84856999285&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2011.6131572

DO - 10.1109/IEDM.2011.6131572

M3 - Conference contribution

AN - SCOPUS:84856999285

SN - 9781457705052

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 17.3.1-17.3.4

BT - 2011 International Electron Devices Meeting, IEDM 2011

Y2 - 5 December 2011 through 7 December 2011

ER -

On the stochastic nature of resistive switching in metal oxide RRAM: Physical modeling, Monte Carlo simulation, and experimental characterization

Abstract

Publication series

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this