On the stochastic nature of resistive switching in metal oxide RRAM: Physical modeling, Monte Carlo simulation, and experimental characterization

Shimeng Yu, Ximeng Guan, H. S.Philip Wong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

98 Scopus citations

Abstract

The origin of switching parameter variations in metal oxide resistive switching random access memory (RRAM) is studied. The stochastic formation/rupture of the conductive filaments (CFs) is modeled and incorporated with a trap-assisted-tunneling (TAT) current solver. The experimental DC I-V characteristics and pulse transient waveform featuring the current fluctuation during the reset process are reproduced by Monte Carlo simulations. It is found that the wide spread of high resistance states (HRS) are due to the variation of tunneling gap distances, and the tail bits of the HRS are due to the newly generated traps near the electrode at the end of the reset process. To solve the over-reset and tail bits problems, a device structure with active/buffer bi-layer oxides combined with the reset-verify technique is proposed. Our model is corroborated by measured experimental data of HfO x based RRAM.

Original languageEnglish (US)
Title of host publication2011 International Electron Devices Meeting, IEDM 2011
Pages17.3.1-17.3.4
DOIs
StatePublished - Dec 1 2011
Event2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States
Duration: Dec 5 2011Dec 7 2011

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2011 IEEE International Electron Devices Meeting, IEDM 2011
CountryUnited States
CityWashington, DC
Period12/5/1112/7/11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Yu, S., Guan, X., & Wong, H. S. P. (2011). On the stochastic nature of resistive switching in metal oxide RRAM: Physical modeling, Monte Carlo simulation, and experimental characterization. In 2011 International Electron Devices Meeting, IEDM 2011 (pp. 17.3.1-17.3.4). [6131572] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2011.6131572