On the physics and modeling of small semiconductor devices-III. Transient response in the finite collision-duration regime

D. K. Ferry, J. R. Barker

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

The role of the finite, non-zero collision duration in high electric fields is examined for its effect on transient and over-shoot response of the carrier velocity and energy. The finite collision duration introduces a temporal retardation effect on the collisional relaxation mechanisms for energy and momentum. As a consequence, the effective temperature also undergoes an overshoot behavior, which leads to a general quickening of the total transient response. Calculations were performed for steady, homogeneous fields utilizing a displaced Maxwellian approach. These calculations were performed for GaAs and Si and have significance for sub-micron devices in these materials. The generally faster response leads to the prospect of improved high frequency properties over what is normally expected.

Original languageEnglish (US)
Pages (from-to)545-549
Number of pages5
JournalSolid State Electronics
Volume23
Issue number6
DOIs
StatePublished - 1980
Externally publishedYes

Fingerprint

transient response
Semiconductor devices
semiconductor devices
Transient analysis
Physics
physics
collisions
Momentum
Electric fields
momentum
electric fields
energy
Temperature
temperature
gallium arsenide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

On the physics and modeling of small semiconductor devices-III. Transient response in the finite collision-duration regime. / Ferry, D. K.; Barker, J. R.

In: Solid State Electronics, Vol. 23, No. 6, 1980, p. 545-549.

Research output: Contribution to journalArticle

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