On the performance limits for Si MOSFET's: a theoretical study

Farzin Assad, Zhibin Ren, Dragica Vasileska, Supriyo Datta, Mark Lundstrom

Research output: Contribution to journalArticle

166 Citations (Scopus)

Abstract

Performance limits of silicon MOSFET's are examined by a simple analytical theory augmented by self-consistent Schrodinger-Poisson simulations. The on-current, transconductance, and drain-to-source resistance in the ballistic limit (which corresponds to the channel length approaching zero) are examined. The ballistic transconductance in the limit that the oxide thickness approaches zero is also examined. The results show that as the channel length approaches zero (which corresponds to the ballistic limit), the on-current and transconductance approach finite limiting values and the channel resistance approaches a finite minimum value. The source velocity can be as high as about 1.5 × 107 cm/s. The limiting on-current and transconductance are considerably higher than those deduced experimentally by a previous study of MOSFET's with channel lengths greater than 0.2 μm. At the same time, the transconductance to current ratio is substantially lower than that of a bipolar transistor.

Original languageEnglish (US)
Pages (from-to)232-240
Number of pages9
JournalIEEE Transactions on Electron Devices
Volume47
Issue number1
DOIs
StatePublished - Jan 2000

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Transconductance
transconductance
field effect transistors
Ballistics
ballistics
Bipolar transistors
Silicon
bipolar transistors
Oxides
oxides
silicon
simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

On the performance limits for Si MOSFET's : a theoretical study. / Assad, Farzin; Ren, Zhibin; Vasileska, Dragica; Datta, Supriyo; Lundstrom, Mark.

In: IEEE Transactions on Electron Devices, Vol. 47, No. 1, 01.2000, p. 232-240.

Research output: Contribution to journalArticle

Assad, Farzin ; Ren, Zhibin ; Vasileska, Dragica ; Datta, Supriyo ; Lundstrom, Mark. / On the performance limits for Si MOSFET's : a theoretical study. In: IEEE Transactions on Electron Devices. 2000 ; Vol. 47, No. 1. pp. 232-240.
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