### Abstract

Performance limits of silicon MOSFET's are examined by a simple analytical theory augmented by self-consistent Schrodinger-Poisson simulations. The on-current, transconductance, and drain-to-source resistance in the ballistic limit (which corresponds to the channel length approaching zero) are examined. The ballistic transconductance in the limit that the oxide thickness approaches zero is also examined. The results show that as the channel length approaches zero (which corresponds to the ballistic limit), the on-current and transconductance approach finite limiting values and the channel resistance approaches a finite minimum value. The source velocity can be as high as about 1.5 × 10^{7} cm/s. The limiting on-current and transconductance are considerably higher than those deduced experimentally by a previous study of MOSFET's with channel lengths greater than 0.2 μm. At the same time, the transconductance to current ratio is substantially lower than that of a bipolar transistor.

Original language | English (US) |
---|---|

Pages (from-to) | 232-240 |

Number of pages | 9 |

Journal | IEEE Transactions on Electron Devices |

Volume | 47 |

Issue number | 1 |

DOIs | |

State | Published - Jan 2000 |

### Fingerprint

### ASJC Scopus subject areas

- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)

### Cite this

*IEEE Transactions on Electron Devices*,

*47*(1), 232-240. https://doi.org/10.1109/16.817590

**On the performance limits for Si MOSFET's : a theoretical study.** / Assad, Farzin; Ren, Zhibin; Vasileska, Dragica; Datta, Supriyo; Lundstrom, Mark.

Research output: Contribution to journal › Article

*IEEE Transactions on Electron Devices*, vol. 47, no. 1, pp. 232-240. https://doi.org/10.1109/16.817590

}

TY - JOUR

T1 - On the performance limits for Si MOSFET's

T2 - a theoretical study

AU - Assad, Farzin

AU - Ren, Zhibin

AU - Vasileska, Dragica

AU - Datta, Supriyo

AU - Lundstrom, Mark

PY - 2000/1

Y1 - 2000/1

N2 - Performance limits of silicon MOSFET's are examined by a simple analytical theory augmented by self-consistent Schrodinger-Poisson simulations. The on-current, transconductance, and drain-to-source resistance in the ballistic limit (which corresponds to the channel length approaching zero) are examined. The ballistic transconductance in the limit that the oxide thickness approaches zero is also examined. The results show that as the channel length approaches zero (which corresponds to the ballistic limit), the on-current and transconductance approach finite limiting values and the channel resistance approaches a finite minimum value. The source velocity can be as high as about 1.5 × 107 cm/s. The limiting on-current and transconductance are considerably higher than those deduced experimentally by a previous study of MOSFET's with channel lengths greater than 0.2 μm. At the same time, the transconductance to current ratio is substantially lower than that of a bipolar transistor.

AB - Performance limits of silicon MOSFET's are examined by a simple analytical theory augmented by self-consistent Schrodinger-Poisson simulations. The on-current, transconductance, and drain-to-source resistance in the ballistic limit (which corresponds to the channel length approaching zero) are examined. The ballistic transconductance in the limit that the oxide thickness approaches zero is also examined. The results show that as the channel length approaches zero (which corresponds to the ballistic limit), the on-current and transconductance approach finite limiting values and the channel resistance approaches a finite minimum value. The source velocity can be as high as about 1.5 × 107 cm/s. The limiting on-current and transconductance are considerably higher than those deduced experimentally by a previous study of MOSFET's with channel lengths greater than 0.2 μm. At the same time, the transconductance to current ratio is substantially lower than that of a bipolar transistor.

UR - http://www.scopus.com/inward/record.url?scp=0033882240&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033882240&partnerID=8YFLogxK

U2 - 10.1109/16.817590

DO - 10.1109/16.817590

M3 - Article

AN - SCOPUS:0033882240

VL - 47

SP - 232

EP - 240

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 1

ER -