On the Low-Temperature Degradation of (AlGa)As/GaAs Modulation-Doped Field-Effect Transistors

Alex Kastalsky, Richard Kiehl

Research output: Contribution to journalArticle

86 Citations (Scopus)

Abstract

A comprehensive study of the anomalous low-temperature behavior of modulation-doped (Al, Ga)As/GaAs field-effect transistors is reported. Experiments on the effect of bias stress on the current-voltage characteristics in lateral resistors, 1-μm gate FET's, and a novel dual-gate tester are presented along with the results of freeze-out, op tical spectroscopy, and trapping kinetics experiments. Both modulation-doped (Al, Ga)As/GaAs heterostructures and isolated (Al, Ga)As layers are examined. The results delineate the conditions under which threshold shift and I-V collapse occur. Based on these results a detailed physical model which explains these effects is proposed. One important conclusion of this work is that the collapse is not related to hot electron injection from the high mobility channel, as suggested earlier, but is a property of a highly doped AlGaAs layer under bias.

Original languageEnglish (US)
Pages (from-to)414-423
Number of pages10
JournalIEEE Transactions on Electron Devices
Volume33
Issue number3
DOIs
StatePublished - 1986
Externally publishedYes

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High electron mobility transistors
algae
Algae
Field effect transistors
field effect transistors
Modulation
degradation
modulation
Degradation
Electron injection
Hot electrons
Current voltage characteristics
test equipment
hot electrons
resistors
Resistors
aluminum gallium arsenides
Heterojunctions
Experiments
trapping

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)

Cite this

On the Low-Temperature Degradation of (AlGa)As/GaAs Modulation-Doped Field-Effect Transistors. / Kastalsky, Alex; Kiehl, Richard.

In: IEEE Transactions on Electron Devices, Vol. 33, No. 3, 1986, p. 414-423.

Research output: Contribution to journalArticle

@article{9b8436b9d93d45febbc08d55a8f59a43,
title = "On the Low-Temperature Degradation of (AlGa)As/GaAs Modulation-Doped Field-Effect Transistors",
abstract = "A comprehensive study of the anomalous low-temperature behavior of modulation-doped (Al, Ga)As/GaAs field-effect transistors is reported. Experiments on the effect of bias stress on the current-voltage characteristics in lateral resistors, 1-μm gate FET's, and a novel dual-gate tester are presented along with the results of freeze-out, op tical spectroscopy, and trapping kinetics experiments. Both modulation-doped (Al, Ga)As/GaAs heterostructures and isolated (Al, Ga)As layers are examined. The results delineate the conditions under which threshold shift and I-V collapse occur. Based on these results a detailed physical model which explains these effects is proposed. One important conclusion of this work is that the collapse is not related to hot electron injection from the high mobility channel, as suggested earlier, but is a property of a highly doped AlGaAs layer under bias.",
author = "Alex Kastalsky and Richard Kiehl",
year = "1986",
doi = "10.1109/T-ED.1986.22503",
language = "English (US)",
volume = "33",
pages = "414--423",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "3",

}

TY - JOUR

T1 - On the Low-Temperature Degradation of (AlGa)As/GaAs Modulation-Doped Field-Effect Transistors

AU - Kastalsky, Alex

AU - Kiehl, Richard

PY - 1986

Y1 - 1986

N2 - A comprehensive study of the anomalous low-temperature behavior of modulation-doped (Al, Ga)As/GaAs field-effect transistors is reported. Experiments on the effect of bias stress on the current-voltage characteristics in lateral resistors, 1-μm gate FET's, and a novel dual-gate tester are presented along with the results of freeze-out, op tical spectroscopy, and trapping kinetics experiments. Both modulation-doped (Al, Ga)As/GaAs heterostructures and isolated (Al, Ga)As layers are examined. The results delineate the conditions under which threshold shift and I-V collapse occur. Based on these results a detailed physical model which explains these effects is proposed. One important conclusion of this work is that the collapse is not related to hot electron injection from the high mobility channel, as suggested earlier, but is a property of a highly doped AlGaAs layer under bias.

AB - A comprehensive study of the anomalous low-temperature behavior of modulation-doped (Al, Ga)As/GaAs field-effect transistors is reported. Experiments on the effect of bias stress on the current-voltage characteristics in lateral resistors, 1-μm gate FET's, and a novel dual-gate tester are presented along with the results of freeze-out, op tical spectroscopy, and trapping kinetics experiments. Both modulation-doped (Al, Ga)As/GaAs heterostructures and isolated (Al, Ga)As layers are examined. The results delineate the conditions under which threshold shift and I-V collapse occur. Based on these results a detailed physical model which explains these effects is proposed. One important conclusion of this work is that the collapse is not related to hot electron injection from the high mobility channel, as suggested earlier, but is a property of a highly doped AlGaAs layer under bias.

UR - http://www.scopus.com/inward/record.url?scp=0022683296&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022683296&partnerID=8YFLogxK

U2 - 10.1109/T-ED.1986.22503

DO - 10.1109/T-ED.1986.22503

M3 - Article

AN - SCOPUS:0022683296

VL - 33

SP - 414

EP - 423

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 3

ER -