Observation of large electron drift velocities in InN by ultrafast Raman spectroscopy

Kong-Thon Tsen; C. Poweleit; D. K. Ferry; Hai Lu; William J. Schaff

doi:10.1063/1.1931048

Observation of large electron drift velocities in InN by ultrafast Raman spectroscopy

Kong-Thon Tsen, C. Poweleit, D. K. Ferry, Hai Lu, William J. Schaff

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Abstract

Electron transport in an InN film grown on GaN has been studied by transient Raman spectroscopy at T=300 K. Our experimental results demonstrate that under the subpicosecond laser excitation and probing, electron drift velocity of carriers in the Γ valley can exceed its steady-state value by as much as 40%. Electron velocities have been found to cut off at around 2× 108 cms, significantly larger than those observed for other III-V semiconductors, such as GaAs and InP. These experimental results have been compared with ensemble Monte Carlo simulations and good agreement has been obtained.

Original language	English (US)
Article number	222103
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	22
DOIs	https://doi.org/10.1063/1.1931048
State	Published - 2005

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Observation of large electron drift velocities in InN by ultrafast Raman spectroscopy",

abstract = "Electron transport in an InN film grown on GaN has been studied by transient Raman spectroscopy at T=300 K. Our experimental results demonstrate that under the subpicosecond laser excitation and probing, electron drift velocity of carriers in the Γ valley can exceed its steady-state value by as much as 40%. Electron velocities have been found to cut off at around 2× 108 cms, significantly larger than those observed for other III-V semiconductors, such as GaAs and InP. These experimental results have been compared with ensemble Monte Carlo simulations and good agreement has been obtained.",

author = "Kong-Thon Tsen and C. Poweleit and Ferry, {D. K.} and Hai Lu and Schaff, {William J.}",

note = "Funding Information: This work is supported by the National Science Foundation under Grant No. DMR-0305147, and the Office of Naval Research. The work at Cornell University is supported by ONR Contract No. N000149910936 monitored by Dr. Colin Wood and a LBNL Subcontract No. 6703635. These authors also acknowledge the technical assistance from Mark Little and Troy Richardson.",

year = "2005",

doi = "10.1063/1.1931048",

language = "English (US)",

volume = "86",

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journal = "Applied Physics Letters",

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TY - JOUR

T1 - Observation of large electron drift velocities in InN by ultrafast Raman spectroscopy

AU - Tsen, Kong-Thon

AU - Poweleit, C.

AU - Ferry, D. K.

AU - Lu, Hai

AU - Schaff, William J.

N1 - Funding Information: This work is supported by the National Science Foundation under Grant No. DMR-0305147, and the Office of Naval Research. The work at Cornell University is supported by ONR Contract No. N000149910936 monitored by Dr. Colin Wood and a LBNL Subcontract No. 6703635. These authors also acknowledge the technical assistance from Mark Little and Troy Richardson.

PY - 2005

Y1 - 2005

N2 - Electron transport in an InN film grown on GaN has been studied by transient Raman spectroscopy at T=300 K. Our experimental results demonstrate that under the subpicosecond laser excitation and probing, electron drift velocity of carriers in the Γ valley can exceed its steady-state value by as much as 40%. Electron velocities have been found to cut off at around 2× 108 cms, significantly larger than those observed for other III-V semiconductors, such as GaAs and InP. These experimental results have been compared with ensemble Monte Carlo simulations and good agreement has been obtained.

AB - Electron transport in an InN film grown on GaN has been studied by transient Raman spectroscopy at T=300 K. Our experimental results demonstrate that under the subpicosecond laser excitation and probing, electron drift velocity of carriers in the Γ valley can exceed its steady-state value by as much as 40%. Electron velocities have been found to cut off at around 2× 108 cms, significantly larger than those observed for other III-V semiconductors, such as GaAs and InP. These experimental results have been compared with ensemble Monte Carlo simulations and good agreement has been obtained.

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Observation of large electron drift velocities in InN by ultrafast Raman spectroscopy

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