Observation of large electron drift velocities in InN by ultrafast Raman spectroscopy

Kong-Thon Tsen, C. Poweleit, D. K. Ferry, Hai Lu, William J. Schaff

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Abstract

Electron transport in an InN film grown on GaN has been studied by transient Raman spectroscopy at T=300 K. Our experimental results demonstrate that under the subpicosecond laser excitation and probing, electron drift velocity of carriers in the Γ valley can exceed its steady-state value by as much as 40%. Electron velocities have been found to cut off at around 2× 108 cms, significantly larger than those observed for other III-V semiconductors, such as GaAs and InP. These experimental results have been compared with ensemble Monte Carlo simulations and good agreement has been obtained.

Original languageEnglish (US)
Article number222103
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number22
DOIs
StatePublished - Jul 4 2005

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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