Abstract
Large-angle convergent beam electron diffraction is used to show that hollow tubes, 5-25 nm in diameter, observed in α-GaN grown on sapphire by metalorganic chemical vapor deposition, contain screw dislocations with Burgers vectors c (0.52 nm). It is shown that these coreless dislocations are not in an equilibrium state but may arise by the trapping of dislocations at pinholes at an early stage of GaN growth. Although pinholes may contain a, c and c + a dislocations, it is argued that only those containing c dislocations can survive to generate nanopipes of constant cross-section along the [0001] axis, as observed experimentally.
Original language | English (US) |
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Pages (from-to) | 201-206 |
Number of pages | 6 |
Journal | Journal of Crystal Growth |
Volume | 178 |
Issue number | 1-2 |
DOIs | |
State | Published - Jun 1997 |
Externally published | Yes |
Keywords
- Chemical vapour deposition
- Convergent beam electron diffraction
- Dislocations
- Semiconductors
- Thin film growth
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry