Observation of coreless dislocations in α-GaN

D. Cherns, W. T. Young, J. W. Steeds, Fernando Ponce, S. Nakamura

Research output: Contribution to journalArticle

85 Citations (Scopus)

Abstract

Large-angle convergent beam electron diffraction is used to show that hollow tubes, 5-25 nm in diameter, observed in α-GaN grown on sapphire by metalorganic chemical vapor deposition, contain screw dislocations with Burgers vectors c (0.52 nm). It is shown that these coreless dislocations are not in an equilibrium state but may arise by the trapping of dislocations at pinholes at an early stage of GaN growth. Although pinholes may contain a, c and c + a dislocations, it is argued that only those containing c dislocations can survive to generate nanopipes of constant cross-section along the [0001] axis, as observed experimentally.

Original languageEnglish (US)
Pages (from-to)201-206
Number of pages6
JournalJournal of Crystal Growth
Volume178
Issue number1-2
StatePublished - Jun 1997
Externally publishedYes

Fingerprint

Burgers vector
Screw dislocations
Aluminum Oxide
Metallorganic chemical vapor deposition
Sapphire
Electron diffraction
pinholes
screw dislocations
metalorganic chemical vapor deposition
hollow
sapphire
electron diffraction
trapping
tubes
cross sections

Keywords

  • Chemical vapour deposition
  • Convergent beam electron diffraction
  • Dislocations
  • Semiconductors
  • Thin film growth

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Cherns, D., Young, W. T., Steeds, J. W., Ponce, F., & Nakamura, S. (1997). Observation of coreless dislocations in α-GaN. Journal of Crystal Growth, 178(1-2), 201-206.

Observation of coreless dislocations in α-GaN. / Cherns, D.; Young, W. T.; Steeds, J. W.; Ponce, Fernando; Nakamura, S.

In: Journal of Crystal Growth, Vol. 178, No. 1-2, 06.1997, p. 201-206.

Research output: Contribution to journalArticle

Cherns, D, Young, WT, Steeds, JW, Ponce, F & Nakamura, S 1997, 'Observation of coreless dislocations in α-GaN', Journal of Crystal Growth, vol. 178, no. 1-2, pp. 201-206.
Cherns D, Young WT, Steeds JW, Ponce F, Nakamura S. Observation of coreless dislocations in α-GaN. Journal of Crystal Growth. 1997 Jun;178(1-2):201-206.
Cherns, D. ; Young, W. T. ; Steeds, J. W. ; Ponce, Fernando ; Nakamura, S. / Observation of coreless dislocations in α-GaN. In: Journal of Crystal Growth. 1997 ; Vol. 178, No. 1-2. pp. 201-206.
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