Novel germanium photodetectors fabricated with a diffused junction

Charles B. Morrison; Rengarajan Sudharsanan; Moran Haddad; Joseph C. Boisvert; Dmitri D. Krut; Richard King; Nasser H. Karam

doi:10.1117/12.467672

Novel germanium photodetectors fabricated with a diffused junction

Charles B. Morrison, Rengarajan Sudharsanan, Moran Haddad, Joseph C. Boisvert, Dmitri D. Krut, Richard King, Nasser H. Karam

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Germanium (Ge) photodetectors are fabricated by growing epitaxial III-V compounds on Ge substrates and by in-situ formation of the PN junction by MOVPE. After material growth, Ge photodetectors are mesa-etched using conventional optoelectronic device processing techniques. By varying the Ge substrate resistivity and the device area, Ge photodetector properties such as reverse leakage current, capacitance, and shunt resistance have been engineered. Such devices have demonstrated leakage currents below 50 μA/cm² at -0.1 V bias. For optoelectronic applications that require high temperature operation, high shunt resistance detectors exhibit leakage currents below 500 μA/cm² at 80 °C. Low capacitance devices have measured as little as 275 pF at 0V bias for a 1 mm diameter detector. High shunt resistance devices are a low cost alternative to conventional InGaAs photodiodes in applications such as laser monitor diodes.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Editors	G.J. Brown, M. Razeghi
Pages	28-36
Number of pages	9
Volume	4650
DOIs	https://doi.org/10.1117/12.467672
State	Published - 2002
Externally published	Yes
Event	Photodetector Materials and Devices VII - San Jose, CA, United States Duration: Jan 21 2002 → Jan 23 2002

Other

Other	Photodetector Materials and Devices VII
Country/Territory	United States
City	San Jose, CA
Period	1/21/02 → 1/23/02

Keywords

Diffusion
Ge photodetectors
Monitor photodiodes
Photodetector design
Solar cells

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

Access to Document

10.1117/12.467672

Cite this

Morrison, CB, Sudharsanan, R, Haddad, M, Boisvert, JC, Krut, DD, King, R & Karam, NH 2002, Novel germanium photodetectors fabricated with a diffused junction. in GJ Brown & M Razeghi (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 4650, pp. 28-36, Photodetector Materials and Devices VII, San Jose, CA, United States, 1/21/02. https://doi.org/10.1117/12.467672

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title = "Novel germanium photodetectors fabricated with a diffused junction",

abstract = "Germanium (Ge) photodetectors are fabricated by growing epitaxial III-V compounds on Ge substrates and by in-situ formation of the PN junction by MOVPE. After material growth, Ge photodetectors are mesa-etched using conventional optoelectronic device processing techniques. By varying the Ge substrate resistivity and the device area, Ge photodetector properties such as reverse leakage current, capacitance, and shunt resistance have been engineered. Such devices have demonstrated leakage currents below 50 μA/cm2 at -0.1 V bias. For optoelectronic applications that require high temperature operation, high shunt resistance detectors exhibit leakage currents below 500 μA/cm2 at 80 °C. Low capacitance devices have measured as little as 275 pF at 0V bias for a 1 mm diameter detector. High shunt resistance devices are a low cost alternative to conventional InGaAs photodiodes in applications such as laser monitor diodes.",

keywords = "Diffusion, Ge photodetectors, Monitor photodiodes, Photodetector design, Solar cells",

author = "Morrison, {Charles B.} and Rengarajan Sudharsanan and Moran Haddad and Boisvert, {Joseph C.} and Krut, {Dmitri D.} and Richard King and Karam, {Nasser H.}",

year = "2002",

doi = "10.1117/12.467672",

language = "English (US)",

volume = "4650",

pages = "28--36",

editor = "G.J. Brown and M. Razeghi",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

note = "Photodetector Materials and Devices VII ; Conference date: 21-01-2002 Through 23-01-2002",

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T1 - Novel germanium photodetectors fabricated with a diffused junction

AU - Morrison, Charles B.

AU - Sudharsanan, Rengarajan

AU - Haddad, Moran

AU - Boisvert, Joseph C.

AU - Krut, Dmitri D.

AU - King, Richard

AU - Karam, Nasser H.

PY - 2002

Y1 - 2002

N2 - Germanium (Ge) photodetectors are fabricated by growing epitaxial III-V compounds on Ge substrates and by in-situ formation of the PN junction by MOVPE. After material growth, Ge photodetectors are mesa-etched using conventional optoelectronic device processing techniques. By varying the Ge substrate resistivity and the device area, Ge photodetector properties such as reverse leakage current, capacitance, and shunt resistance have been engineered. Such devices have demonstrated leakage currents below 50 μA/cm2 at -0.1 V bias. For optoelectronic applications that require high temperature operation, high shunt resistance detectors exhibit leakage currents below 500 μA/cm2 at 80 °C. Low capacitance devices have measured as little as 275 pF at 0V bias for a 1 mm diameter detector. High shunt resistance devices are a low cost alternative to conventional InGaAs photodiodes in applications such as laser monitor diodes.

AB - Germanium (Ge) photodetectors are fabricated by growing epitaxial III-V compounds on Ge substrates and by in-situ formation of the PN junction by MOVPE. After material growth, Ge photodetectors are mesa-etched using conventional optoelectronic device processing techniques. By varying the Ge substrate resistivity and the device area, Ge photodetector properties such as reverse leakage current, capacitance, and shunt resistance have been engineered. Such devices have demonstrated leakage currents below 50 μA/cm2 at -0.1 V bias. For optoelectronic applications that require high temperature operation, high shunt resistance detectors exhibit leakage currents below 500 μA/cm2 at 80 °C. Low capacitance devices have measured as little as 275 pF at 0V bias for a 1 mm diameter detector. High shunt resistance devices are a low cost alternative to conventional InGaAs photodiodes in applications such as laser monitor diodes.

KW - Diffusion

KW - Ge photodetectors

KW - Monitor photodiodes

KW - Photodetector design

KW - Solar cells

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DO - 10.1117/12.467672

M3 - Conference contribution

AN - SCOPUS:0036060510

VL - 4650

SP - 28

EP - 36

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Brown, G.J.

A2 - Razeghi, M.

T2 - Photodetector Materials and Devices VII

Y2 - 21 January 2002 through 23 January 2002

ER -

Novel germanium photodetectors fabricated with a diffused junction

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Keywords

ASJC Scopus subject areas

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