Novel germanium photodetectors fabricated with a diffused junction

Charles B. Morrison, Rengarajan Sudharsanan, Moran Haddad, Joseph C. Boisvert, Dmitri D. Krut, Richard King, Nasser H. Karam

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


Germanium (Ge) photodetectors are fabricated by growing epitaxial III-V compounds on Ge substrates and by in-situ formation of the PN junction by MOVPE. After material growth, Ge photodetectors are mesa-etched using conventional optoelectronic device processing techniques. By varying the Ge substrate resistivity and the device area, Ge photodetector properties such as reverse leakage current, capacitance, and shunt resistance have been engineered. Such devices have demonstrated leakage currents below 50 μA/cm2 at -0.1 V bias. For optoelectronic applications that require high temperature operation, high shunt resistance detectors exhibit leakage currents below 500 μA/cm2 at 80 °C. Low capacitance devices have measured as little as 275 pF at 0V bias for a 1 mm diameter detector. High shunt resistance devices are a low cost alternative to conventional InGaAs photodiodes in applications such as laser monitor diodes.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsG.J. Brown, M. Razeghi
Number of pages9
StatePublished - 2002
Externally publishedYes
EventPhotodetector Materials and Devices VII - San Jose, CA, United States
Duration: Jan 21 2002Jan 23 2002


OtherPhotodetector Materials and Devices VII
Country/TerritoryUnited States
CitySan Jose, CA


  • Diffusion
  • Ge photodetectors
  • Monitor photodiodes
  • Photodetector design
  • Solar cells

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics


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