Abstract

We considered the net modal gain and the confinement factors for semiconductor gain and metal loss in a metal-semiconductor-metal waveguide. We found that these confinement factors can have extraordinarily large values and can be gain-dependent and strongly enhanced by pumping in the semiconductor.

Original languageEnglish (US)
Title of host publication2010 IEEE Photonics Society Winter Topicals Meeting Series, WTM 2010
Pages126-127
Number of pages2
DOIs
StatePublished - Apr 28 2010
Event2010 IEEE Photonics Society Winter Topicals Meeting, WTM 2010 - Majorca, Spain
Duration: Jan 11 2010Jan 13 2010

Publication series

Name2010 IEEE Photonics Society Winter Topicals Meeting Series, WTM 2010

Other

Other2010 IEEE Photonics Society Winter Topicals Meeting, WTM 2010
CountrySpain
CityMajorca
Period1/11/101/13/10

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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