Novel Compositions of Matter and Method of Depositing Pure Thin Films of Gallium Nitride Semiconductor

John Kouvetakis (Inventor)

Research output: Patent

Abstract

The successful fabrication of light emitting diodes and semiconductor lasers from gallium nitride (GaN) and related wide bandgap nitrides has prompted considerable research into the growth and development of these compounds. Currently, the most common means for deposition of GaN by chemical vapor deposition (CVD) requires large excesses of ammonia and temperatures exceeding 1000C. Meanwhile, alternative means of deposition using other azide-containing compounds have proven to be unsuccessful because the organic groups present in these compounds incorporate undesirable carbon compounds. Still, alternative synthetic methods based on single source molecular precursors that incorporate GaN bonds and labile, preferably, non-organic leaving groups offer the potential of significant improvements in film quality and growth process: lower deposition temperature, elimination of the inefficient use of ammonia, reduction in nitrogen and carbon contamination, much enhanced doping capabilities, etc. Consequently, optimal precursor compounds, providing a facile decomposition pathway leading to the desirable material and offering sufficient volatility at room temperature to undergo CVD or molecular beam epitaxy (MBE), are desirable. Accordingly, researchers at Arizona State University have identified novel compounds which serve as single source precursors for the deposition of gallium nitride on thin films. Likewise, these researchers have developed a means to synthesize and a method to use single source precursor compounds which allow the deposition of GaN at low temperatures and allow stoichiometric deposition of GaN onto thin films. Potential Applications Light Emitting Diode Fabrication Semiconductor Fabrication (e.g. Semiconductor Lasers) Preparation of Thin Films and Bulk PowderBenefits and Advantages Lower Deposition Temperature sufficiently volatile at room temperature for CVD and MBE Eliminates Inefficient Use of Ammonia Reduction in Nitrogen Vacancies and Carbon Contamination does not contain heavy organic groups, which invariably introduce carbon contamination during film growth; does not contain NH bonds, which promote loss of nitrogen Improved Decomposition Reactions yields pure GaN heterostructures and nanostructures of unusual morphologies and microstructure Allows Standard Methods of AnalysisDownload Original PDF
Original languageEnglish (US)
StatePublished - Feb 12 1999

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Semiconductor materials
Thin films
Chemical analysis
Carbon
Ammonia
Semiconductor lasers
Chemical vapor deposition
Contamination
Nitrogen
Molecular beam epitaxy
Fabrication
Temperature
Light emitting diodes
Decomposition
Azides
Film growth
gallium nitride
Nitrides
Vacancies
Heterojunctions

Cite this

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title = "Novel Compositions of Matter and Method of Depositing Pure Thin Films of Gallium Nitride Semiconductor",
abstract = "The successful fabrication of light emitting diodes and semiconductor lasers from gallium nitride (GaN) and related wide bandgap nitrides has prompted considerable research into the growth and development of these compounds. Currently, the most common means for deposition of GaN by chemical vapor deposition (CVD) requires large excesses of ammonia and temperatures exceeding 1000C. Meanwhile, alternative means of deposition using other azide-containing compounds have proven to be unsuccessful because the organic groups present in these compounds incorporate undesirable carbon compounds. Still, alternative synthetic methods based on single source molecular precursors that incorporate GaN bonds and labile, preferably, non-organic leaving groups offer the potential of significant improvements in film quality and growth process: lower deposition temperature, elimination of the inefficient use of ammonia, reduction in nitrogen and carbon contamination, much enhanced doping capabilities, etc. Consequently, optimal precursor compounds, providing a facile decomposition pathway leading to the desirable material and offering sufficient volatility at room temperature to undergo CVD or molecular beam epitaxy (MBE), are desirable. Accordingly, researchers at Arizona State University have identified novel compounds which serve as single source precursors for the deposition of gallium nitride on thin films. Likewise, these researchers have developed a means to synthesize and a method to use single source precursor compounds which allow the deposition of GaN at low temperatures and allow stoichiometric deposition of GaN onto thin films. Potential Applications Light Emitting Diode Fabrication Semiconductor Fabrication (e.g. Semiconductor Lasers) Preparation of Thin Films and Bulk PowderBenefits and Advantages Lower Deposition Temperature sufficiently volatile at room temperature for CVD and MBE Eliminates Inefficient Use of Ammonia Reduction in Nitrogen Vacancies and Carbon Contamination does not contain heavy organic groups, which invariably introduce carbon contamination during film growth; does not contain NH bonds, which promote loss of nitrogen Improved Decomposition Reactions yields pure GaN heterostructures and nanostructures of unusual morphologies and microstructure Allows Standard Methods of AnalysisDownload Original PDF",
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AU - Kouvetakis, John

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N2 - The successful fabrication of light emitting diodes and semiconductor lasers from gallium nitride (GaN) and related wide bandgap nitrides has prompted considerable research into the growth and development of these compounds. Currently, the most common means for deposition of GaN by chemical vapor deposition (CVD) requires large excesses of ammonia and temperatures exceeding 1000C. Meanwhile, alternative means of deposition using other azide-containing compounds have proven to be unsuccessful because the organic groups present in these compounds incorporate undesirable carbon compounds. Still, alternative synthetic methods based on single source molecular precursors that incorporate GaN bonds and labile, preferably, non-organic leaving groups offer the potential of significant improvements in film quality and growth process: lower deposition temperature, elimination of the inefficient use of ammonia, reduction in nitrogen and carbon contamination, much enhanced doping capabilities, etc. Consequently, optimal precursor compounds, providing a facile decomposition pathway leading to the desirable material and offering sufficient volatility at room temperature to undergo CVD or molecular beam epitaxy (MBE), are desirable. Accordingly, researchers at Arizona State University have identified novel compounds which serve as single source precursors for the deposition of gallium nitride on thin films. Likewise, these researchers have developed a means to synthesize and a method to use single source precursor compounds which allow the deposition of GaN at low temperatures and allow stoichiometric deposition of GaN onto thin films. Potential Applications Light Emitting Diode Fabrication Semiconductor Fabrication (e.g. Semiconductor Lasers) Preparation of Thin Films and Bulk PowderBenefits and Advantages Lower Deposition Temperature sufficiently volatile at room temperature for CVD and MBE Eliminates Inefficient Use of Ammonia Reduction in Nitrogen Vacancies and Carbon Contamination does not contain heavy organic groups, which invariably introduce carbon contamination during film growth; does not contain NH bonds, which promote loss of nitrogen Improved Decomposition Reactions yields pure GaN heterostructures and nanostructures of unusual morphologies and microstructure Allows Standard Methods of AnalysisDownload Original PDF

AB - The successful fabrication of light emitting diodes and semiconductor lasers from gallium nitride (GaN) and related wide bandgap nitrides has prompted considerable research into the growth and development of these compounds. Currently, the most common means for deposition of GaN by chemical vapor deposition (CVD) requires large excesses of ammonia and temperatures exceeding 1000C. Meanwhile, alternative means of deposition using other azide-containing compounds have proven to be unsuccessful because the organic groups present in these compounds incorporate undesirable carbon compounds. Still, alternative synthetic methods based on single source molecular precursors that incorporate GaN bonds and labile, preferably, non-organic leaving groups offer the potential of significant improvements in film quality and growth process: lower deposition temperature, elimination of the inefficient use of ammonia, reduction in nitrogen and carbon contamination, much enhanced doping capabilities, etc. Consequently, optimal precursor compounds, providing a facile decomposition pathway leading to the desirable material and offering sufficient volatility at room temperature to undergo CVD or molecular beam epitaxy (MBE), are desirable. Accordingly, researchers at Arizona State University have identified novel compounds which serve as single source precursors for the deposition of gallium nitride on thin films. Likewise, these researchers have developed a means to synthesize and a method to use single source precursor compounds which allow the deposition of GaN at low temperatures and allow stoichiometric deposition of GaN onto thin films. Potential Applications Light Emitting Diode Fabrication Semiconductor Fabrication (e.g. Semiconductor Lasers) Preparation of Thin Films and Bulk PowderBenefits and Advantages Lower Deposition Temperature sufficiently volatile at room temperature for CVD and MBE Eliminates Inefficient Use of Ammonia Reduction in Nitrogen Vacancies and Carbon Contamination does not contain heavy organic groups, which invariably introduce carbon contamination during film growth; does not contain NH bonds, which promote loss of nitrogen Improved Decomposition Reactions yields pure GaN heterostructures and nanostructures of unusual morphologies and microstructure Allows Standard Methods of AnalysisDownload Original PDF

M3 - Patent

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