Normal incidence intervalence subband absorption in GaSb quantum well enhanced by coupling to InAs conduction band

J. Katz, Yong-Hang Zhang, W. I. Wang

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We demonstrate a novel infrared (IR) detector structure based on the type II p-doped InAs/GaSb multiquantum well system. Due to the coupling of the first conduction subband in InAs to the valence band states in GaSb, the normal incidence absorption coefficient for intervalence subband transitions between heavy and light hole subbands in GaSb quantum wells is significantly enhanced. An absorption coefficient as large as 6500 cm-1 has been achieved in the wavelength range of 8-17 μm. This is the strongest absorption ever observed among all the IR materials in this wavelength range.

Original languageEnglish (US)
Pages (from-to)609-611
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number6
DOIs
StatePublished - 1993
Externally publishedYes

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absorptivity
conduction bands
incidence
quantum wells
infrared detectors
wavelengths
valence
conduction

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Normal incidence intervalence subband absorption in GaSb quantum well enhanced by coupling to InAs conduction band. / Katz, J.; Zhang, Yong-Hang; Wang, W. I.

In: Applied Physics Letters, Vol. 62, No. 6, 1993, p. 609-611.

Research output: Contribution to journalArticle

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