Normal incidence intervalence subband absorption in GaSb quantum well enhanced by coupling to InAs conduction band

J. Katz; Y. Zhang; W. I. Wang

doi:10.1063/1.108871

Normal incidence intervalence subband absorption in GaSb quantum well enhanced by coupling to InAs conduction band

J. Katz, Y. Zhang, W. I. Wang

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We demonstrate a novel infrared (IR) detector structure based on the type II p-doped InAs/GaSb multiquantum well system. Due to the coupling of the first conduction subband in InAs to the valence band states in GaSb, the normal incidence absorption coefficient for intervalence subband transitions between heavy and light hole subbands in GaSb quantum wells is significantly enhanced. An absorption coefficient as large as 6500 cm^-1 has been achieved in the wavelength range of 8-17 μm. This is the strongest absorption ever observed among all the IR materials in this wavelength range.

Original language	English (US)
Pages (from-to)	609-611
Number of pages	3
Journal	Applied Physics Letters
Volume	62
Issue number	6
DOIs	https://doi.org/10.1063/1.108871
State	Published - 1993
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Normal incidence intervalence subband absorption in GaSb quantum well enhanced by coupling to InAs conduction band",

abstract = "We demonstrate a novel infrared (IR) detector structure based on the type II p-doped InAs/GaSb multiquantum well system. Due to the coupling of the first conduction subband in InAs to the valence band states in GaSb, the normal incidence absorption coefficient for intervalence subband transitions between heavy and light hole subbands in GaSb quantum wells is significantly enhanced. An absorption coefficient as large as 6500 cm-1 has been achieved in the wavelength range of 8-17 μm. This is the strongest absorption ever observed among all the IR materials in this wavelength range.",

author = "J. Katz and Y. Zhang and Wang, {W. I.}",

year = "1993",

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journal = "Applied Physics Letters",

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T1 - Normal incidence intervalence subband absorption in GaSb quantum well enhanced by coupling to InAs conduction band

AU - Katz, J.

AU - Zhang, Y.

AU - Wang, W. I.

PY - 1993

Y1 - 1993

N2 - We demonstrate a novel infrared (IR) detector structure based on the type II p-doped InAs/GaSb multiquantum well system. Due to the coupling of the first conduction subband in InAs to the valence band states in GaSb, the normal incidence absorption coefficient for intervalence subband transitions between heavy and light hole subbands in GaSb quantum wells is significantly enhanced. An absorption coefficient as large as 6500 cm-1 has been achieved in the wavelength range of 8-17 μm. This is the strongest absorption ever observed among all the IR materials in this wavelength range.

AB - We demonstrate a novel infrared (IR) detector structure based on the type II p-doped InAs/GaSb multiquantum well system. Due to the coupling of the first conduction subband in InAs to the valence band states in GaSb, the normal incidence absorption coefficient for intervalence subband transitions between heavy and light hole subbands in GaSb quantum wells is significantly enhanced. An absorption coefficient as large as 6500 cm-1 has been achieved in the wavelength range of 8-17 μm. This is the strongest absorption ever observed among all the IR materials in this wavelength range.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Normal incidence intervalence subband absorption in GaSb quantum well enhanced by coupling to InAs conduction band

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