Normal incidence infrared absorption in AlAs/AlGaAs x-valley multiquantum wells

Jennifer Katz, Yong-Hang Zhang, W. I. Wang

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We report the first observation of normal incidence infrared absorption due to interconduction subband transitions in AlAs/AlGaAs x-valley multiquantum wells. Infrared absorption measurements were performed on samples grown on [111], [113], [115], and [001] substrates with normal incidence radiation at wavelengths of 5-20 μm. Two absorption peaks were observed in the [113] and [115] multiquantum wells with well widths of 40 Å and sheet doping concentrations of 1012 cm-2. One peak, due to transitions between the ground state and the continuum band occurred at 7.1 μm; a second peak originating from interconduction subband transitions between the ground state and the first excited state occurred at 17 μm. The experimental results indicate the potential of these novel structures for use as normal incidence infrared photodetectors.

Original languageEnglish (US)
Pages (from-to)1697-1699
Number of pages3
JournalApplied Physics Letters
Volume61
Issue number14
DOIs
StatePublished - 1992
Externally publishedYes

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infrared absorption
valleys
aluminum gallium arsenides
incidence
ground state
photometers
continuums
radiation
wavelengths
excitation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Normal incidence infrared absorption in AlAs/AlGaAs x-valley multiquantum wells. / Katz, Jennifer; Zhang, Yong-Hang; Wang, W. I.

In: Applied Physics Letters, Vol. 61, No. 14, 1992, p. 1697-1699.

Research output: Contribution to journalArticle

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