Normal incidence infra-red absorption from intersub-band transitions in p-type GaInAs/AllnAs quantum wells

J. Katz, Yong-Hang Zhang, W. I. Wang

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Infra-red intersub-band absorption measurements were performed on p-type Ga0.47In0.53As/Al0.68In0.52As multiquantum wells using normally incident radiation. Several strong intersub-band absorption peaks were observed in the wavelength range 6-12 μm. The transition from the impurity bound state to the extended state was observed for the first time.

Original languageEnglish (US)
Pages (from-to)932-934
Number of pages3
JournalElectronics Letters
Volume28
Issue number10
StatePublished - May 7 1992
Externally publishedYes

Fingerprint

Infrared absorption
Semiconductor quantum wells
Absorption spectra
Impurities
Infrared radiation
Radiation
Wavelength

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Normal incidence infra-red absorption from intersub-band transitions in p-type GaInAs/AllnAs quantum wells. / Katz, J.; Zhang, Yong-Hang; Wang, W. I.

In: Electronics Letters, Vol. 28, No. 10, 07.05.1992, p. 932-934.

Research output: Contribution to journalArticle

@article{8072bdd5f1534a31bb312e2b3d7d24c7,
title = "Normal incidence infra-red absorption from intersub-band transitions in p-type GaInAs/AllnAs quantum wells",
abstract = "Infra-red intersub-band absorption measurements were performed on p-type Ga0.47In0.53As/Al0.68In0.52As multiquantum wells using normally incident radiation. Several strong intersub-band absorption peaks were observed in the wavelength range 6-12 μm. The transition from the impurity bound state to the extended state was observed for the first time.",
author = "J. Katz and Yong-Hang Zhang and Wang, {W. I.}",
year = "1992",
month = "5",
day = "7",
language = "English (US)",
volume = "28",
pages = "932--934",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "10",

}

TY - JOUR

T1 - Normal incidence infra-red absorption from intersub-band transitions in p-type GaInAs/AllnAs quantum wells

AU - Katz, J.

AU - Zhang, Yong-Hang

AU - Wang, W. I.

PY - 1992/5/7

Y1 - 1992/5/7

N2 - Infra-red intersub-band absorption measurements were performed on p-type Ga0.47In0.53As/Al0.68In0.52As multiquantum wells using normally incident radiation. Several strong intersub-band absorption peaks were observed in the wavelength range 6-12 μm. The transition from the impurity bound state to the extended state was observed for the first time.

AB - Infra-red intersub-band absorption measurements were performed on p-type Ga0.47In0.53As/Al0.68In0.52As multiquantum wells using normally incident radiation. Several strong intersub-band absorption peaks were observed in the wavelength range 6-12 μm. The transition from the impurity bound state to the extended state was observed for the first time.

UR - http://www.scopus.com/inward/record.url?scp=0027114167&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027114167&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0027114167

VL - 28

SP - 932

EP - 934

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 10

ER -