Normal incidence infra-red absorption from intersub-band transitions in p-Type GalnAs/AllnAs quantum wells

J. Katz; Y. Zhang; W. I. Wang

doi:10.1049/el:19920590

Normal incidence infra-red absorption from intersub-band transitions in p-Type GalnAs/AllnAs quantum wells

J. Katz, Y. Zhang, W. I. Wang

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Infra-red intersub-band absorption measurements were performed on p-type Ga_0.47In_0.53As/Al_0.48In_0.52As multiquantum wells using normally incident radiation. Several strong intersub-band absorption peaks were observed in the wavelength range 6·12 µm. The transition from the impurity bound state to the extended state was observed for the first time.

Original language	English (US)
Pages (from-to)	932-934
Number of pages	3
Journal	Electronics Letters
Volume	28
Issue number	10
DOIs	https://doi.org/10.1049/el:19920590
State	Published - May 7 1992
Externally published	Yes

Keywords

Losses
Quantum optics
Semiconductor materials

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19920590

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title = "Normal incidence infra-red absorption from intersub-band transitions in p-Type GalnAs/AllnAs quantum wells",

abstract = "Infra-red intersub-band absorption measurements were performed on p-type Ga0.47In0.53As/Al0.48In0.52As multiquantum wells using normally incident radiation. Several strong intersub-band absorption peaks were observed in the wavelength range 6·12 µm. The transition from the impurity bound state to the extended state was observed for the first time.",

keywords = "Losses, Quantum optics, Semiconductor materials",

author = "J. Katz and Y. Zhang and Wang, {W. I.}",

year = "1992",

month = may,

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doi = "10.1049/el:19920590",

language = "English (US)",

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journal = "Electronics Letters",

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T1 - Normal incidence infra-red absorption from intersub-band transitions in p-Type GalnAs/AllnAs quantum wells

AU - Katz, J.

AU - Zhang, Y.

AU - Wang, W. I.

PY - 1992/5/7

Y1 - 1992/5/7

N2 - Infra-red intersub-band absorption measurements were performed on p-type Ga0.47In0.53As/Al0.48In0.52As multiquantum wells using normally incident radiation. Several strong intersub-band absorption peaks were observed in the wavelength range 6·12 µm. The transition from the impurity bound state to the extended state was observed for the first time.

AB - Infra-red intersub-band absorption measurements were performed on p-type Ga0.47In0.53As/Al0.48In0.52As multiquantum wells using normally incident radiation. Several strong intersub-band absorption peaks were observed in the wavelength range 6·12 µm. The transition from the impurity bound state to the extended state was observed for the first time.

KW - Losses

KW - Quantum optics

KW - Semiconductor materials

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UR - http://www.scopus.com/inward/citedby.url?scp=0027114167&partnerID=8YFLogxK

U2 - 10.1049/el:19920590

DO - 10.1049/el:19920590

M3 - Article

AN - SCOPUS:0027114167

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VL - 28

SP - 932

EP - 934

JO - Electronics Letters

JF - Electronics Letters

IS - 10

ER -

Normal incidence infra-red absorption from intersub-band transitions in p-Type GalnAs/AllnAs quantum wells

Abstract

Keywords

ASJC Scopus subject areas

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