Normal incidence infra-red absorption from intersub-band transitions in p-Type GalnAs/AllnAs quantum wells

J. Katz, Y. Zhang, W. I. Wang

Research output: Contribution to journalArticle

14 Scopus citations

Abstract

Infra-red intersub-band absorption measurements were performed on p-type Ga0.47In0.53As/Al0.48In0.52As multiquantum wells using normally incident radiation. Several strong intersub-band absorption peaks were observed in the wavelength range 6·12 µm. The transition from the impurity bound state to the extended state was observed for the first time.

Original languageEnglish (US)
Pages (from-to)932-934
Number of pages3
JournalElectronics Letters
Volume28
Issue number10
DOIs
StatePublished - May 7 1992
Externally publishedYes

Keywords

  • Losses
  • Quantum optics
  • Semiconductor materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Normal incidence infra-red absorption from intersub-band transitions in p-Type GalnAs/AllnAs quantum wells'. Together they form a unique fingerprint.

  • Cite this