Nonpolar vertical GaN-on-GaN p-n diodes grown on free-standing IMG ALIGN="MIDDLE" ALT="$(10\bar{1}0)$" SRC="AP180752if001.gif"/ m-plane GaN substrates

Houqiang Fu, Xiaodong Zhang, Kai Fu, Hanxiao Liu, Shanthan R. Alugubelli, Xuanqi Huang, Hong Chen, Izak Baranowski, Tsung Han Yang, Ke Xu, Fernando Ponce, Baoshun Zhang, Yuji Zhao

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We report nonpolar vertical GaN-on-GaN p-n diodes grown on m-plane free-standing substrates. Cathodoluminescence measurements showed that the nonpolar p-GaN had a high quality with very few deep-level states. The device exhibited good rectifying behaviors with a turn-on voltage of 4.0 V, on-resistance of 2.3 mΩ•cm2, and high on/off ratio of 1010. The reverse current leakage was described by a trap-assisted space-charge-limited current conduction mechanism. The critical electrical field was calculated to be 2.0 MV/cm without field plates or edge termination. These results pave the way for development of novel nonpolar power electronics and polarization-engineering-related advanced power devices.

Original languageEnglish (US)
Article number111003
JournalApplied Physics Express
Volume11
Issue number11
DOIs
StatePublished - Nov 1 2018

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Cathodoluminescence
Power electronics
Electric space charge
Leakage currents
Diodes
diodes
Polarization
Electric potential
Substrates
cathodoluminescence
space charge
leakage
traps
engineering
conduction
electric potential
polarization
electronics

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Nonpolar vertical GaN-on-GaN p-n diodes grown on free-standing IMG ALIGN="MIDDLE" ALT="$(10\bar{1}0)$" SRC="AP180752if001.gif"/ m-plane GaN substrates. / Fu, Houqiang; Zhang, Xiaodong; Fu, Kai; Liu, Hanxiao; Alugubelli, Shanthan R.; Huang, Xuanqi; Chen, Hong; Baranowski, Izak; Yang, Tsung Han; Xu, Ke; Ponce, Fernando; Zhang, Baoshun; Zhao, Yuji.

In: Applied Physics Express, Vol. 11, No. 11, 111003, 01.11.2018.

Research output: Contribution to journalArticle

Fu, Houqiang ; Zhang, Xiaodong ; Fu, Kai ; Liu, Hanxiao ; Alugubelli, Shanthan R. ; Huang, Xuanqi ; Chen, Hong ; Baranowski, Izak ; Yang, Tsung Han ; Xu, Ke ; Ponce, Fernando ; Zhang, Baoshun ; Zhao, Yuji. / Nonpolar vertical GaN-on-GaN p-n diodes grown on free-standing IMG ALIGN="MIDDLE" ALT="$(10\bar{1}0)$" SRC="AP180752if001.gif"/ m-plane GaN substrates. In: Applied Physics Express. 2018 ; Vol. 11, No. 11.
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AU - Fu, Houqiang

AU - Zhang, Xiaodong

AU - Fu, Kai

AU - Liu, Hanxiao

AU - Alugubelli, Shanthan R.

AU - Huang, Xuanqi

AU - Chen, Hong

AU - Baranowski, Izak

AU - Yang, Tsung Han

AU - Xu, Ke

AU - Ponce, Fernando

AU - Zhang, Baoshun

AU - Zhao, Yuji

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