Nonpolar vertical GaN-on-GaN p-n diodes grown on free-standing IMG ALIGN="MIDDLE" ALT="$(10\bar{1}0)$" SRC="AP180752if001.gif"/ m-plane GaN substrates

Houqiang Fu, Xiaodong Zhang, Kai Fu, Hanxiao Liu, Shanthan R. Alugubelli, Xuanqi Huang, Hong Chen, Izak Baranowski, Tsung Han Yang, Ke Xu, Fernando Ponce, Baoshun Zhang, Yuji Zhao

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

We report nonpolar vertical GaN-on-GaN p-n diodes grown on m-plane free-standing substrates. Cathodoluminescence measurements showed that the nonpolar p-GaN had a high quality with very few deep-level states. The device exhibited good rectifying behaviors with a turn-on voltage of 4.0 V, on-resistance of 2.3 mΩ•cm2, and high on/off ratio of 1010. The reverse current leakage was described by a trap-assisted space-charge-limited current conduction mechanism. The critical electrical field was calculated to be 2.0 MV/cm without field plates or edge termination. These results pave the way for development of novel nonpolar power electronics and polarization-engineering-related advanced power devices.

Original languageEnglish (US)
Article number111003
JournalApplied Physics Express
Volume11
Issue number11
DOIs
StatePublished - Nov 2018

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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