Nonequilibrium Electron Distributions and High-Field Electron Transport in an AlxGa1-xAs-Based p-i-n Nanostructure Semiconductor-A Picosecond Raman Probe

Erik D. Grann; Shou jong Sheih; Kong-Thon Tsen; Selim Guncer; David K. Ferry; Arnel Salvador; Andrei Botcharev; Hadis Morkoc

doi:10.1109/2944.488686

Nonequilibrium Electron Distributions and High-Field Electron Transport in an AlxGa1-xAs-Based p-i-n Nanostructure Semiconductor-A Picosecond Raman Probe

Erik D. Grann, Shou jong Sheih, Kong-Thon Tsen, Selim Guncer, David K. Ferry, Arnel Salvador, Andrei Botcharev, Hadis Morkoc

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Electron transport in an AlxGa1-xAs (x = 0.3) based p-i-n nanostructure semiconductor under the application of an electric field has been studied at T = 80 K by picosecond transient Raman spectroscopy. Single-particle excitations associated with spin-density fluctuations were used to directly measure electron distribution functions and drift velocities under various electric field intensities. Extremely nonequilibrium electron distributions were observed. Specifically, for an injected carrier density of n ⋍ 1 × 1018 cm−3, a drift velocity Vd as high as 2.5 × 107 cm/s was measured for an electric field intensity E = 18 kV/cm. These experimental results are in good agreement with Ensemble Monte Carlo calculations.

Original language	English (US)
Pages (from-to)	1093-1099
Number of pages	7
Journal	IEEE Journal on Selected Topics in Quantum Electronics
Volume	1
Issue number	4
DOIs	https://doi.org/10.1109/2944.488686
State	Published - Dec 1995

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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Grann, E. D., Sheih, S. J., Tsen, K-T., Guncer, S., Ferry, D. K., Salvador, A., Botcharev, A., & Morkoc, H. (1995). Nonequilibrium Electron Distributions and High-Field Electron Transport in an AlxGa1-xAs-Based p-i-n Nanostructure Semiconductor-A Picosecond Raman Probe. IEEE Journal on Selected Topics in Quantum Electronics, 1(4), 1093-1099. https://doi.org/10.1109/2944.488686

Nonequilibrium Electron Distributions and High-Field Electron Transport in an AlxGa1-xAs-Based p-i-n Nanostructure Semiconductor-A Picosecond Raman Probe. / Grann, Erik D.; Sheih, Shou jong; Tsen, Kong-Thon; Guncer, Selim; Ferry, David K.; Salvador, Arnel; Botcharev, Andrei; Morkoc, Hadis.

In: IEEE Journal on Selected Topics in Quantum Electronics, Vol. 1, No. 4, 12.1995, p. 1093-1099.

Research output: Contribution to journal › Article › peer-review

Grann, ED, Sheih, SJ, Tsen, K-T, Guncer, S, Ferry, DK, Salvador, A, Botcharev, A & Morkoc, H 1995, 'Nonequilibrium Electron Distributions and High-Field Electron Transport in an AlxGa1-xAs-Based p-i-n Nanostructure Semiconductor-A Picosecond Raman Probe', IEEE Journal on Selected Topics in Quantum Electronics, vol. 1, no. 4, pp. 1093-1099. https://doi.org/10.1109/2944.488686

Grann, Erik D. ; Sheih, Shou jong ; Tsen, Kong-Thon ; Guncer, Selim ; Ferry, David K. ; Salvador, Arnel ; Botcharev, Andrei ; Morkoc, Hadis. / Nonequilibrium Electron Distributions and High-Field Electron Transport in an AlxGa1-xAs-Based p-i-n Nanostructure Semiconductor-A Picosecond Raman Probe. In: IEEE Journal on Selected Topics in Quantum Electronics. 1995 ; Vol. 1, No. 4. pp. 1093-1099.

@article{c41fff0ab220427b99d1065b75c09654,

title = "Nonequilibrium Electron Distributions and High-Field Electron Transport in an AlxGa1-xAs-Based p-i-n Nanostructure Semiconductor-A Picosecond Raman Probe",

abstract = "Electron transport in an AlxGa1-xAs (x = 0.3) based p-i-n nanostructure semiconductor under the application of an electric field has been studied at T = 80 K by picosecond transient Raman spectroscopy. Single-particle excitations associated with spin-density fluctuations were used to directly measure electron distribution functions and drift velocities under various electric field intensities. Extremely nonequilibrium electron distributions were observed. Specifically, for an injected carrier density of n ⋍ 1 × 1018 cm−3, a drift velocity Vd as high as 2.5 × 107 cm/s was measured for an electric field intensity E = 18 kV/cm. These experimental results are in good agreement with Ensemble Monte Carlo calculations.",

author = "Grann, {Erik D.} and Sheih, {Shou jong} and Kong-Thon Tsen and Selim Guncer and Ferry, {David K.} and Arnel Salvador and Andrei Botcharev and Hadis Morkoc",

note = "Funding Information: Manuscript received February 10, 1995; revised June 8, 1995. This work was supported in part by the National Science Foundation under Grant DMR-9301100 and by the Office of Naval Research PACS 78.47.+p, 78.30.F~. E. D. Grann, S. J. Sheih, and K. T. Tsen are with the Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287 USA. S. E. Gunqer is with the Physics Department, University of Illinois, Chicago, IL 60680 USA. D. K. Ferry is with the Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287 USA. A. Salvador, A. Botcharev, and H. Morkoq are with the Coordinated Science Laboratory, University of Illinois, Urbana, IL 61 801 USA. IEEE Log Number 9415318.",

year = "1995",

month = dec,

doi = "10.1109/2944.488686",

language = "English (US)",

volume = "1",

pages = "1093--1099",

journal = "IEEE Journal of Selected Topics in Quantum Electronics",

issn = "1077-260X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Nonequilibrium Electron Distributions and High-Field Electron Transport in an AlxGa1-xAs-Based p-i-n Nanostructure Semiconductor-A Picosecond Raman Probe

AU - Grann, Erik D.

AU - Sheih, Shou jong

AU - Tsen, Kong-Thon

AU - Guncer, Selim

AU - Ferry, David K.

AU - Salvador, Arnel

AU - Botcharev, Andrei

AU - Morkoc, Hadis

N1 - Funding Information: Manuscript received February 10, 1995; revised June 8, 1995. This work was supported in part by the National Science Foundation under Grant DMR-9301100 and by the Office of Naval Research PACS 78.47.+p, 78.30.F~. E. D. Grann, S. J. Sheih, and K. T. Tsen are with the Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287 USA. S. E. Gunqer is with the Physics Department, University of Illinois, Chicago, IL 60680 USA. D. K. Ferry is with the Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287 USA. A. Salvador, A. Botcharev, and H. Morkoq are with the Coordinated Science Laboratory, University of Illinois, Urbana, IL 61 801 USA. IEEE Log Number 9415318.

PY - 1995/12

Y1 - 1995/12

N2 - Electron transport in an AlxGa1-xAs (x = 0.3) based p-i-n nanostructure semiconductor under the application of an electric field has been studied at T = 80 K by picosecond transient Raman spectroscopy. Single-particle excitations associated with spin-density fluctuations were used to directly measure electron distribution functions and drift velocities under various electric field intensities. Extremely nonequilibrium electron distributions were observed. Specifically, for an injected carrier density of n ⋍ 1 × 1018 cm−3, a drift velocity Vd as high as 2.5 × 107 cm/s was measured for an electric field intensity E = 18 kV/cm. These experimental results are in good agreement with Ensemble Monte Carlo calculations.

AB - Electron transport in an AlxGa1-xAs (x = 0.3) based p-i-n nanostructure semiconductor under the application of an electric field has been studied at T = 80 K by picosecond transient Raman spectroscopy. Single-particle excitations associated with spin-density fluctuations were used to directly measure electron distribution functions and drift velocities under various electric field intensities. Extremely nonequilibrium electron distributions were observed. Specifically, for an injected carrier density of n ⋍ 1 × 1018 cm−3, a drift velocity Vd as high as 2.5 × 107 cm/s was measured for an electric field intensity E = 18 kV/cm. These experimental results are in good agreement with Ensemble Monte Carlo calculations.

UR - http://www.scopus.com/inward/record.url?scp=0029535958&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029535958&partnerID=8YFLogxK

U2 - 10.1109/2944.488686

DO - 10.1109/2944.488686

M3 - Article

AN - SCOPUS:0029535958

VL - 1

SP - 1093

EP - 1099

JO - IEEE Journal of Selected Topics in Quantum Electronics

JF - IEEE Journal of Selected Topics in Quantum Electronics

SN - 1077-260X

IS - 4

ER -

Nonequilibrium Electron Distributions and High-Field Electron Transport in an AlxGa1-xAs-Based p-i-n Nanostructure Semiconductor-A Picosecond Raman Probe

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