@article{c41fff0ab220427b99d1065b75c09654,
title = "Nonequilibrium Electron Distributions and High-Field Electron Transport in an AlxGa1-xAs-Based p-i-n Nanostructure Semiconductor-A Picosecond Raman Probe",
abstract = "Electron transport in an AlxGa1-xAs (x = 0.3) based p-i-n nanostructure semiconductor under the application of an electric field has been studied at T = 80 K by picosecond transient Raman spectroscopy. Single-particle excitations associated with spin-density fluctuations were used to directly measure electron distribution functions and drift velocities under various electric field intensities. Extremely nonequilibrium electron distributions were observed. Specifically, for an injected carrier density of n ⋍ 1 × 1018 cm−3, a drift velocity Vd as high as 2.5 × 107 cm/s was measured for an electric field intensity E = 18 kV/cm. These experimental results are in good agreement with Ensemble Monte Carlo calculations.",
author = "Grann, {Erik D.} and Sheih, {Shou jong} and Kong-Thon Tsen and Selim Guncer and Ferry, {David K.} and Arnel Salvador and Andrei Botcharev and Hadis Morkoc",
note = "Funding Information: Manuscript received February 10, 1995; revised June 8, 1995. This work was supported in part by the National Science Foundation under Grant DMR-9301100 and by the Office of Naval Research PACS 78.47.+p, 78.30.F~. E. D. Grann, S. J. Sheih, and K. T. Tsen are with the Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287 USA. S. E. Gunqer is with the Physics Department, University of Illinois, Chicago, IL 60680 USA. D. K. Ferry is with the Department of Electrical Engineering, Arizona State University, Tempe, AZ 85287 USA. A. Salvador, A. Botcharev, and H. Morkoq are with the Coordinated Science Laboratory, University of Illinois, Urbana, IL 61 801 USA. IEEE Log Number 9415318.",
year = "1995",
month = dec,
doi = "10.1109/2944.488686",
language = "English (US)",
volume = "1",
pages = "1093--1099",
journal = "IEEE Journal of Selected Topics in Quantum Electronics",
issn = "1077-260X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "4",
}