Electron transport in an AlxGa1-xAs (x = 0.3) based p-i-n nanostructure semiconductor under the application of an electric field has been studied at T = 80 K by picosecond transient Raman spectroscopy. Single-particle excitations associated with spin-density fluctuations were used to directly measure electron distribution functions and drift velocities under various electric field intensities. Extremely nonequilibrium electron distributions were observed. Specifically, for an injected carrier density of n ⋍ 1 × 1018 cm−3, a drift velocity Vd as high as 2.5 × 107 cm/s was measured for an electric field intensity E = 18 kV/cm. These experimental results are in good agreement with Ensemble Monte Carlo calculations.
|Original language||English (US)|
|Number of pages||7|
|Journal||IEEE Journal on Selected Topics in Quantum Electronics|
|State||Published - Dec 1995|
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering