Nonequilibrium Electron Distributions and High-Field Electron Transport in an AlxGa1-xAs-Based p-i-n Nanostructure Semiconductor-A Picosecond Raman Probe

Erik D. Grann, Shou jong Sheih, Kong-Thon Tsen, Selim Guncer, David K. Ferry, Arnel Salvador, Andrei Botcharev, Hadis Morkoc

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

Electron transport in an AlxGa1-xAs (x = 0.3) based p-i-n nanostructure semiconductor under the application of an electric field has been studied at T = 80 K by picosecond transient Raman spectroscopy. Single-particle excitations associated with spin-density fluctuations were used to directly measure electron distribution functions and drift velocities under various electric field intensities. Extremely nonequilibrium electron distributions were observed. Specifically, for an injected carrier density of n ⋍ 1 × 1018 cm−3, a drift velocity Vd as high as 2.5 × 107 cm/s was measured for an electric field intensity E = 18 kV/cm. These experimental results are in good agreement with Ensemble Monte Carlo calculations.

Original languageEnglish (US)
Pages (from-to)1093-1099
Number of pages7
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume1
Issue number4
DOIs
StatePublished - Dec 1995

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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