Nonequilibrium Electron Distributions and High-Field Electron Transport in an AlxGa1-xAs-Based p-i-n Nanostructure Semiconductor-A Picosecond Raman Probe

Erik D. Grann; Shou jong Sheih; Kong-Thon Tsen; Selim Guncer; David K. Ferry; Arnel Salvador; Andrei Botcharev; Hadis Morkoc

doi:10.1109/2944.488686

Nonequilibrium Electron Distributions and High-Field Electron Transport in an AlxGa1-xAs-Based p-i-n Nanostructure Semiconductor-A Picosecond Raman Probe

Erik D. Grann, Shou jong Sheih, Kong-Thon Tsen, Selim Guncer, David K. Ferry, Arnel Salvador, Andrei Botcharev, Hadis Morkoc

Research output: Contribution to journal › Article

2 Scopus citations

Abstract

Electron transport in an AlxGa1-xAs (x = 0.3) based p-i-n nanostructure semiconductor under the application of an electric field has been studied at T = 80 K by picosecond transient Raman spectroscopy. Single-particle excitations associated with spin-density fluctuations were used to directly measure electron distribution functions and drift velocities under various electric field intensities. Extremely nonequilibrium electron distributions were observed. Specifically, for an injected carrier density of n ⋍ 1 × 1018 cm−3, a drift velocity Vd as high as 2.5 × 107 cm/s was measured for an electric field intensity E = 18 kV/cm. These experimental results are in good agreement with Ensemble Monte Carlo calculations.

Original language	English (US)
Pages (from-to)	1093-1099
Number of pages	7
Journal	IEEE Journal on Selected Topics in Quantum Electronics
Volume	1
Issue number	4
DOIs	https://doi.org/10.1109/2944.488686
State	Published - Dec 1995

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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Grann, E. D., Sheih, S. J., Tsen, K-T., Guncer, S., Ferry, D. K., Salvador, A., Botcharev, A., & Morkoc, H. (1995). Nonequilibrium Electron Distributions and High-Field Electron Transport in an AlxGa1-xAs-Based p-i-n Nanostructure Semiconductor-A Picosecond Raman Probe. IEEE Journal on Selected Topics in Quantum Electronics, 1(4), 1093-1099. https://doi.org/10.1109/2944.488686

Nonequilibrium Electron Distributions and High-Field Electron Transport in an AlxGa1-xAs-Based p-i-n Nanostructure Semiconductor-A Picosecond Raman Probe. / Grann, Erik D.; Sheih, Shou jong; Tsen, Kong-Thon; Guncer, Selim; Ferry, David K.; Salvador, Arnel; Botcharev, Andrei; Morkoc, Hadis.

In: IEEE Journal on Selected Topics in Quantum Electronics, Vol. 1, No. 4, 12.1995, p. 1093-1099.

Research output: Contribution to journal › Article

Grann, ED, Sheih, SJ, Tsen, K-T, Guncer, S, Ferry, DK, Salvador, A, Botcharev, A & Morkoc, H 1995, 'Nonequilibrium Electron Distributions and High-Field Electron Transport in an AlxGa1-xAs-Based p-i-n Nanostructure Semiconductor-A Picosecond Raman Probe', IEEE Journal on Selected Topics in Quantum Electronics, vol. 1, no. 4, pp. 1093-1099. https://doi.org/10.1109/2944.488686

Grann, Erik D. ; Sheih, Shou jong ; Tsen, Kong-Thon ; Guncer, Selim ; Ferry, David K. ; Salvador, Arnel ; Botcharev, Andrei ; Morkoc, Hadis. / Nonequilibrium Electron Distributions and High-Field Electron Transport in an AlxGa1-xAs-Based p-i-n Nanostructure Semiconductor-A Picosecond Raman Probe. In: IEEE Journal on Selected Topics in Quantum Electronics. 1995 ; Vol. 1, No. 4. pp. 1093-1099.

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abstract = "Electron transport in an AlxGa1-xAs (x = 0.3) based p-i-n nanostructure semiconductor under the application of an electric field has been studied at T = 80 K by picosecond transient Raman spectroscopy. Single-particle excitations associated with spin-density fluctuations were used to directly measure electron distribution functions and drift velocities under various electric field intensities. Extremely nonequilibrium electron distributions were observed. Specifically, for an injected carrier density of n ⋍ 1 × 1018 cm−3, a drift velocity Vd as high as 2.5 × 107 cm/s was measured for an electric field intensity E = 18 kV/cm. These experimental results are in good agreement with Ensemble Monte Carlo calculations.",

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AU - Tsen, Kong-Thon

AU - Guncer, Selim

AU - Ferry, David K.

AU - Salvador, Arnel

AU - Botcharev, Andrei

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