Abstract

A strong variation in the luminescence characteristics in Mg-doped GaN grown on mesa structures has been observed, with the sidewall luminescence being different from that of the flat regions. A comparison with the luminescence characteristics of Mg-doped GaN epilayers with different Mg concentrations indicates that the sidewall has a significantly lower Mg content. This observed non-uniform Mg distribution is attributed to the dependence of Mg incorporation efficiency on the crystal orientation of the growth surface, which should impact the electrical performance of power devices.

Original languageEnglish (US)
Article number082102
JournalApplied Physics Letters
Volume114
Issue number8
DOIs
StatePublished - Feb 25 2019

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mesas
luminescence
electronics
crystals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics. / Liu, Hanxiao; Fu, Houqiang; Fu, Kai; Alugubelli, Shanthan R.; Su, Po Yi; Zhao, Yuji; Ponce, Fernando.

In: Applied Physics Letters, Vol. 114, No. 8, 082102, 25.02.2019.

Research output: Contribution to journalArticle

Liu, Hanxiao ; Fu, Houqiang ; Fu, Kai ; Alugubelli, Shanthan R. ; Su, Po Yi ; Zhao, Yuji ; Ponce, Fernando. / Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics. In: Applied Physics Letters. 2019 ; Vol. 114, No. 8.
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