TY - GEN
T1 - Nitride based Schottky-barrier photovoltaic devices
AU - Jampana, Balakrishnam R.
AU - Jani, Omkar K.
AU - Hongbo, Yu
AU - Ferguson, Ian T.
AU - McCandless, Brian E.
AU - Hegedus, Steven S.
AU - Opila, Robert L.
AU - Honsberg, Christiana B.
PY - 2008
Y1 - 2008
N2 - Schottky-barrier photovoltaic devices are fabricated by selective metal deposition on p-GaN. A 1.25 V open-circuit voltage is observed for the best device. Devices were optimized by annealing in forming gas at temperatures ranging from 550°C to 700°C Annealing time and forming gas flow rate are used to control the metal-semiconductor Schottky barrier formation. Optimum fabrication parameters are achieved based on photovoltaic response from the devices under UV illumination. Barrier heights (0.47 eV - 0.49 eV) were used as basis to compare the device response. The Schottky-barrier height is very sensitive to processing conditions, for example a 2.5% increase in barrier height is observed when Schottky contact annealing temperature is changed from 600°C to 650°C Under UV illumination, the open-circuit voltage and short-circuit current increase with increasing annealing temperature while the series resistance decreases under such conditions.
AB - Schottky-barrier photovoltaic devices are fabricated by selective metal deposition on p-GaN. A 1.25 V open-circuit voltage is observed for the best device. Devices were optimized by annealing in forming gas at temperatures ranging from 550°C to 700°C Annealing time and forming gas flow rate are used to control the metal-semiconductor Schottky barrier formation. Optimum fabrication parameters are achieved based on photovoltaic response from the devices under UV illumination. Barrier heights (0.47 eV - 0.49 eV) were used as basis to compare the device response. The Schottky-barrier height is very sensitive to processing conditions, for example a 2.5% increase in barrier height is observed when Schottky contact annealing temperature is changed from 600°C to 650°C Under UV illumination, the open-circuit voltage and short-circuit current increase with increasing annealing temperature while the series resistance decreases under such conditions.
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M3 - Conference contribution
AN - SCOPUS:70350277461
SN - 9781605608396
T3 - Materials Research Society Symposium Proceedings
SP - 207
EP - 212
BT - Nitrides and Related Bulk Materials
T2 - 2007 MRS Fall Meeting
Y2 - 26 November 2007 through 30 November 2007
ER -