Abstract
The electron affinity of diamond and AlGaN surfaces are studied by UV photoemission spectroscopy. It is shown that H terminated diamond surfaces exhibit a negative electron affinity while oxide terminated surfaces exhibit a positive electron affinity. In addition, thin metal layers can also induce a NEA on both (100) and (111) surfaces of diamond. Photoemission results of AlGaN alloy films grown on 6H-SiC indicate a negative electron affinity for as-prepared and air exposed surfaces with high Al concentrations.
Original language | English (US) |
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Pages (from-to) | 790-796 |
Number of pages | 7 |
Journal | Diamond and Related Materials |
Volume | 5 |
Issue number | 6-8 |
DOIs | |
State | Published - May 1996 |
Externally published | Yes |
Keywords
- Electron affinity
- Electron emission
- Nitrides
- Surfaces
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Chemistry(all)
- Mechanical Engineering
- Materials Chemistry
- Electrical and Electronic Engineering