Negative electron affinity surfaces of aluminum nitride and diamond

R. J. Nemanich, P. K. Baumann, M. C. Benjamin, S. W. King, J. Van Der Weide, R. F. Davis

Research output: Contribution to journalArticle

66 Scopus citations

Abstract

The electron affinity of diamond and AlGaN surfaces are studied by UV photoemission spectroscopy. It is shown that H terminated diamond surfaces exhibit a negative electron affinity while oxide terminated surfaces exhibit a positive electron affinity. In addition, thin metal layers can also induce a NEA on both (100) and (111) surfaces of diamond. Photoemission results of AlGaN alloy films grown on 6H-SiC indicate a negative electron affinity for as-prepared and air exposed surfaces with high Al concentrations.

Original languageEnglish (US)
Pages (from-to)790-796
Number of pages7
JournalDiamond and Related Materials
Volume5
Issue number6-8
StatePublished - May 1996
Externally publishedYes

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Keywords

  • Electron affinity
  • Electron emission
  • Nitrides
  • Surfaces

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Nemanich, R. J., Baumann, P. K., Benjamin, M. C., King, S. W., Van Der Weide, J., & Davis, R. F. (1996). Negative electron affinity surfaces of aluminum nitride and diamond. Diamond and Related Materials, 5(6-8), 790-796.