Negative electron affinity effects and Schottky barrier height measurements of metals on diamond (100) surfaces

P. K. Baumann, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

In this study copper and cobalt films have been deposited on natural type IIb single crystal semiconducting diamond (100) surfaces in ultra-high vacuum (UHV). Prior to metal deposition the diamond crystals have been cleaned by a 1150°C anneal in UHV. This treatment resulted in positive electron affinity surfaces. Upon deposition of 2angstrom of Cu or Co a negative electron affinity (NEA) was observed. Schottky barrier heights of 0.70 eV and 0.35 eV were found for Cu and Co respectively. In-situ Auger electron spectroscopy (AES) was employed to confirm the presence of a metal layer.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages157-162
Number of pages6
Volume416
StatePublished - 1996
Externally publishedYes
EventProceedings of the 1995 MRS Fall Symposium - Boston, MA, USA
Duration: Nov 27 1995Nov 30 1995

Other

OtherProceedings of the 1995 MRS Fall Symposium
CityBoston, MA, USA
Period11/27/9511/30/95

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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    Baumann, P. K., & Nemanich, R. (1996). Negative electron affinity effects and Schottky barrier height measurements of metals on diamond (100) surfaces. In Materials Research Society Symposium - Proceedings (Vol. 416, pp. 157-162). Materials Research Society.