Abstract
In this study copper and cobalt films have been deposited on natural type IIb single crystal semiconducting diamond (100) surfaces in ultra-high vacuum (UHV). Prior to metal deposition the diamond crystals have been cleaned by a 1150°C anneal in UHV. This treatment resulted in positive electron affinity surfaces. Upon deposition of 2angstrom of Cu or Co a negative electron affinity (NEA) was observed. Schottky barrier heights of 0.70 eV and 0.35 eV were found for Cu and Co respectively. In-situ Auger electron spectroscopy (AES) was employed to confirm the presence of a metal layer.
| Original language | English (US) |
|---|---|
| Title of host publication | Materials Research Society Symposium - Proceedings |
| Publisher | Materials Research Society |
| Pages | 157-162 |
| Number of pages | 6 |
| Volume | 416 |
| State | Published - 1996 |
| Externally published | Yes |
| Event | Proceedings of the 1995 MRS Fall Symposium - Boston, MA, USA Duration: Nov 27 1995 → Nov 30 1995 |
Other
| Other | Proceedings of the 1995 MRS Fall Symposium |
|---|---|
| City | Boston, MA, USA |
| Period | 11/27/95 → 11/30/95 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials