Nanoscale scanning tunneling microscope patterning of silicon dioxide thin films by catalyzed HF vapor etching

Thomas K. Whidden, John Allgair, Angela Jenkins-Gray, Michael Kozicki

Research output: Contribution to journalConference articlepeer-review

11 Scopus citations

Abstract

We report on the use of electron beam and scanning tunneling microscope (STM) patterns of ambient hydrocarbon residues on silicon dioxide as chemical initiators for the localized high-temperature HF vapor etching of oxide thin films. The treated films, when subjected to HF vapor etching at 115 °C, are patterned in the areas that have been exposed to an electron beam in either a scanning electron microscope or STM. The technique has been combined with reactive ion etching or metallization to yield nanometer scale patterns and nanoscale metal silicide lines on silicon. Nonaqueous Bronsted bases have been shown to be retained on the oxide surface at temperatures of up to 125 °C and to function as HF etch initiators. Such species show promise as monolayer resists for the patterning of silicon dioxide using the HF vapor etch process.

Original languageEnglish (US)
Pages (from-to)1337-1341
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume13
Issue number3
DOIs
StatePublished - May 1 1995
EventProceedings of the 3rd International Conference on Nanometer-Scale Science and Technology - Denver, CO, USA
Duration: Oct 24 1994Oct 28 1994

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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