Nanoscale compositional fluctuations in single InGaAs/GaAs quantum dots

M. De Giorgi, A. Passaseo, R. Rinaldi, T. Johal, R. Cingolani, A. Taurino, M. Catalano, Peter Crozier

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We report the first investigation of compositional disorder in quantum dots with subnanometer precision. We have investigated the compositional profile of a single InGaAs/GaAs quantum dot, of nominal In content x = 0.5, by using energy-dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM), and atomic force and scanning tunneling microscope (AFM-STM) topography. The compositional analysis at nanoscale reveals a number of unexpected features: (i) In enrichment of the centre of the dot (about 65% In content); (ii) In diffusion outside the dot contour; (iii) In depletion of the wetting layer in the surrounding of the dot.

Original languageEnglish (US)
Pages (from-to)17-20
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume224
Issue number1
DOIs
StatePublished - Mar 2001

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Semiconductor quantum dots
quantum dots
Topography
wetting
Wetting
topography
depletion
Microscopes
microscopes
atomic force microscopy
disorders
Transmission electron microscopy
Scanning
transmission electron microscopy
scanning
profiles
spectroscopy
x rays
gallium arsenide
energy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Nanoscale compositional fluctuations in single InGaAs/GaAs quantum dots. / De Giorgi, M.; Passaseo, A.; Rinaldi, R.; Johal, T.; Cingolani, R.; Taurino, A.; Catalano, M.; Crozier, Peter.

In: Physica Status Solidi (B) Basic Research, Vol. 224, No. 1, 03.2001, p. 17-20.

Research output: Contribution to journalArticle

De Giorgi, M. ; Passaseo, A. ; Rinaldi, R. ; Johal, T. ; Cingolani, R. ; Taurino, A. ; Catalano, M. ; Crozier, Peter. / Nanoscale compositional fluctuations in single InGaAs/GaAs quantum dots. In: Physica Status Solidi (B) Basic Research. 2001 ; Vol. 224, No. 1. pp. 17-20.
@article{2ee7dfc1c6454ff4b4a81199616ada7f,
title = "Nanoscale compositional fluctuations in single InGaAs/GaAs quantum dots",
abstract = "We report the first investigation of compositional disorder in quantum dots with subnanometer precision. We have investigated the compositional profile of a single InGaAs/GaAs quantum dot, of nominal In content x = 0.5, by using energy-dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM), and atomic force and scanning tunneling microscope (AFM-STM) topography. The compositional analysis at nanoscale reveals a number of unexpected features: (i) In enrichment of the centre of the dot (about 65{\%} In content); (ii) In diffusion outside the dot contour; (iii) In depletion of the wetting layer in the surrounding of the dot.",
author = "{De Giorgi}, M. and A. Passaseo and R. Rinaldi and T. Johal and R. Cingolani and A. Taurino and M. Catalano and Peter Crozier",
year = "2001",
month = "3",
doi = "10.1002/1521-3951(200103)224:1<17::AID-PSSB17>3.0.CO;2-Z",
language = "English (US)",
volume = "224",
pages = "17--20",
journal = "Physica Status Solidi (B): Basic Research",
issn = "0370-1972",
publisher = "Wiley-VCH Verlag",
number = "1",

}

TY - JOUR

T1 - Nanoscale compositional fluctuations in single InGaAs/GaAs quantum dots

AU - De Giorgi, M.

AU - Passaseo, A.

AU - Rinaldi, R.

AU - Johal, T.

AU - Cingolani, R.

AU - Taurino, A.

AU - Catalano, M.

AU - Crozier, Peter

PY - 2001/3

Y1 - 2001/3

N2 - We report the first investigation of compositional disorder in quantum dots with subnanometer precision. We have investigated the compositional profile of a single InGaAs/GaAs quantum dot, of nominal In content x = 0.5, by using energy-dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM), and atomic force and scanning tunneling microscope (AFM-STM) topography. The compositional analysis at nanoscale reveals a number of unexpected features: (i) In enrichment of the centre of the dot (about 65% In content); (ii) In diffusion outside the dot contour; (iii) In depletion of the wetting layer in the surrounding of the dot.

AB - We report the first investigation of compositional disorder in quantum dots with subnanometer precision. We have investigated the compositional profile of a single InGaAs/GaAs quantum dot, of nominal In content x = 0.5, by using energy-dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM), and atomic force and scanning tunneling microscope (AFM-STM) topography. The compositional analysis at nanoscale reveals a number of unexpected features: (i) In enrichment of the centre of the dot (about 65% In content); (ii) In diffusion outside the dot contour; (iii) In depletion of the wetting layer in the surrounding of the dot.

UR - http://www.scopus.com/inward/record.url?scp=0035583678&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035583678&partnerID=8YFLogxK

U2 - 10.1002/1521-3951(200103)224:1<17::AID-PSSB17>3.0.CO;2-Z

DO - 10.1002/1521-3951(200103)224:1<17::AID-PSSB17>3.0.CO;2-Z

M3 - Article

AN - SCOPUS:0035583678

VL - 224

SP - 17

EP - 20

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

SN - 0370-1972

IS - 1

ER -