Nano-XRF analysis of metal impurities distribution at grain boundaries during mc-silicon solar cell processing

Simone Bernardini, Steve Johnston, Bradley West, Tine U. Naerland, Michael Stuckelberger, Barry Lai, Mariana Bertoni

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Photoluminescence (PL) imaging is a widely accepted tool to characterize the quality of multicrystalline and monocrystalline silicon cells. Recently a set of neighboring multicrystalline silicon wafers taken from a cell production line at different processing stages have shown an unexpected PL trend. Band-to-band PL (BPL) and sub-bandgap PL (subPL), were collected for the entire silicon wafers. Interestingly, in various regions of the wafer a reversal of the subPL intensity is observed right after the deposition of the anti-reflective coating (ARC). In this work we present the results of the nanoscale X-ray fluorescence imaging at the points of subPL reversal to evaluate the role of metal decoration on this uncommon behavior and we complement it with our previous findings on the distribution of impurities during cell processing.

Original languageEnglish (US)
Title of host publication2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-4
Number of pages4
ISBN (Electronic)9781509056057
DOIs
StatePublished - May 25 2018
Event44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States
Duration: Jun 25 2017Jun 30 2017

Other

Other44th IEEE Photovoltaic Specialist Conference, PVSC 2017
CountryUnited States
CityWashington
Period6/25/176/30/17

Fingerprint

Silicon solar cells
Photoluminescence
Grain boundaries
Metals
Impurities
Energy gap
Processing
Silicon wafers
Reflective coatings
Monocrystalline silicon
Imaging techniques
Fluorescence
X rays

Keywords

  • Multicrystalline silicon
  • Photoluminescence
  • PL band reversal
  • Sub-band PL
  • X-ray fluorescence

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Bernardini, S., Johnston, S., West, B., Naerland, T. U., Stuckelberger, M., Lai, B., & Bertoni, M. (2018). Nano-XRF analysis of metal impurities distribution at grain boundaries during mc-silicon solar cell processing. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1-4). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366189

Nano-XRF analysis of metal impurities distribution at grain boundaries during mc-silicon solar cell processing. / Bernardini, Simone; Johnston, Steve; West, Bradley; Naerland, Tine U.; Stuckelberger, Michael; Lai, Barry; Bertoni, Mariana.

2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-4.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bernardini, S, Johnston, S, West, B, Naerland, TU, Stuckelberger, M, Lai, B & Bertoni, M 2018, Nano-XRF analysis of metal impurities distribution at grain boundaries during mc-silicon solar cell processing. in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., pp. 1-4, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, United States, 6/25/17. https://doi.org/10.1109/PVSC.2017.8366189
Bernardini S, Johnston S, West B, Naerland TU, Stuckelberger M, Lai B et al. Nano-XRF analysis of metal impurities distribution at grain boundaries during mc-silicon solar cell processing. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-4 https://doi.org/10.1109/PVSC.2017.8366189
Bernardini, Simone ; Johnston, Steve ; West, Bradley ; Naerland, Tine U. ; Stuckelberger, Michael ; Lai, Barry ; Bertoni, Mariana. / Nano-XRF analysis of metal impurities distribution at grain boundaries during mc-silicon solar cell processing. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1-4
@inproceedings{a5b23a55efbd4cd99d67271e0c8576b6,
title = "Nano-XRF analysis of metal impurities distribution at grain boundaries during mc-silicon solar cell processing",
abstract = "Photoluminescence (PL) imaging is a widely accepted tool to characterize the quality of multicrystalline and monocrystalline silicon cells. Recently a set of neighboring multicrystalline silicon wafers taken from a cell production line at different processing stages have shown an unexpected PL trend. Band-to-band PL (BPL) and sub-bandgap PL (subPL), were collected for the entire silicon wafers. Interestingly, in various regions of the wafer a reversal of the subPL intensity is observed right after the deposition of the anti-reflective coating (ARC). In this work we present the results of the nanoscale X-ray fluorescence imaging at the points of subPL reversal to evaluate the role of metal decoration on this uncommon behavior and we complement it with our previous findings on the distribution of impurities during cell processing.",
keywords = "Multicrystalline silicon, Photoluminescence, PL band reversal, Sub-band PL, X-ray fluorescence",
author = "Simone Bernardini and Steve Johnston and Bradley West and Naerland, {Tine U.} and Michael Stuckelberger and Barry Lai and Mariana Bertoni",
year = "2018",
month = "5",
day = "25",
doi = "10.1109/PVSC.2017.8366189",
language = "English (US)",
pages = "1--4",
booktitle = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Nano-XRF analysis of metal impurities distribution at grain boundaries during mc-silicon solar cell processing

AU - Bernardini, Simone

AU - Johnston, Steve

AU - West, Bradley

AU - Naerland, Tine U.

AU - Stuckelberger, Michael

AU - Lai, Barry

AU - Bertoni, Mariana

PY - 2018/5/25

Y1 - 2018/5/25

N2 - Photoluminescence (PL) imaging is a widely accepted tool to characterize the quality of multicrystalline and monocrystalline silicon cells. Recently a set of neighboring multicrystalline silicon wafers taken from a cell production line at different processing stages have shown an unexpected PL trend. Band-to-band PL (BPL) and sub-bandgap PL (subPL), were collected for the entire silicon wafers. Interestingly, in various regions of the wafer a reversal of the subPL intensity is observed right after the deposition of the anti-reflective coating (ARC). In this work we present the results of the nanoscale X-ray fluorescence imaging at the points of subPL reversal to evaluate the role of metal decoration on this uncommon behavior and we complement it with our previous findings on the distribution of impurities during cell processing.

AB - Photoluminescence (PL) imaging is a widely accepted tool to characterize the quality of multicrystalline and monocrystalline silicon cells. Recently a set of neighboring multicrystalline silicon wafers taken from a cell production line at different processing stages have shown an unexpected PL trend. Band-to-band PL (BPL) and sub-bandgap PL (subPL), were collected for the entire silicon wafers. Interestingly, in various regions of the wafer a reversal of the subPL intensity is observed right after the deposition of the anti-reflective coating (ARC). In this work we present the results of the nanoscale X-ray fluorescence imaging at the points of subPL reversal to evaluate the role of metal decoration on this uncommon behavior and we complement it with our previous findings on the distribution of impurities during cell processing.

KW - Multicrystalline silicon

KW - Photoluminescence

KW - PL band reversal

KW - Sub-band PL

KW - X-ray fluorescence

UR - http://www.scopus.com/inward/record.url?scp=85048472634&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85048472634&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2017.8366189

DO - 10.1109/PVSC.2017.8366189

M3 - Conference contribution

SP - 1

EP - 4

BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

PB - Institute of Electrical and Electronics Engineers Inc.

ER -