Nano-metal-assisted chemical etching for fabricating semiconductor and optoelectronic devices

Owen Hildreth; C. P. Wong

doi:10.1007/978-3-319-45098-8_21

Nano-metal-assisted chemical etching for fabricating semiconductor and optoelectronic devices

Owen Hildreth, C. P. Wong

Engineering of Matter, Transport and Energy, School for (IAFSE-SEMTE)

Research output: Chapter in Book/Report/Conference proceeding › Chapter

5 Scopus citations

Abstract

This chapter summarizes the current state-of-the-art for semiconductor and optoelectronic device fabrication using Metal-assisted chemical Etching (MacEtch). It details MacEtch’s history, the physics and chemistry, processing considerations, and applications in device fabrication.

Original language	English (US)
Title of host publication	Materials for Advanced Packaging, Second Edition
Publisher	Springer International Publishing
Pages	879-922
Number of pages	44
ISBN (Electronic)	9783319450988
ISBN (Print)	9783319450971
DOIs	https://doi.org/10.1007/978-3-319-45098-8_21
State	Published - Jan 1 2016

Keywords

Catalyst
Etching
MaCE
MacEtch
Metal-assisted chemical etching
Microelectronics packaging
Nanofabrication
Silicon
Thru silicon via (TSV)

ASJC Scopus subject areas

General Engineering
General Materials Science

Access to Document

10.1007/978-3-319-45098-8_21

Cite this

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keywords = "Catalyst, Etching, MaCE, MacEtch, Metal-assisted chemical etching, Microelectronics packaging, Nanofabrication, Silicon, Thru silicon via (TSV)",

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KW - Silicon

KW - Thru silicon via (TSV)

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Nano-metal-assisted chemical etching for fabricating semiconductor and optoelectronic devices

Abstract

Keywords

ASJC Scopus subject areas

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