Multiple quantum well laser prepared by molecular-beam-epitaxy and device characteristics

Engineering & Materials Science

• Quantum well lasers 100%
• Threshold current density 97%
• Semiconductor quantum wells 78%
• Molecular beam epitaxy 78%
• Molecular beams 44%
• Quantum efficiency 39%
• Lasers 38%
• Protons 30%
• Wavelength 22%
• Temperature 20%
• Geometry 15%

Physics & Astronomy

• quantum well lasers 57%
• threshold currents 51%
• molecular beam epitaxy 42%
• aluminum gallium arsenides 31%
• current density 24%
• molecular beams 17%
• lasing 15%
• flat surfaces 15%
• far fields 14%
• quantum efficiency 14%
• lasers 14%
• injection 12%
• protons 10%
• geometry 9%
• room temperature 9%
• wavelengths 7%
• temperature 4%

Chemical Compounds

• Molecular Beam Epitaxy 72%
• Current Density 36%
• Molecular Beam 30%
• Wavelength 17%
• Proton 16%
• Ambient Reaction Temperature 14%