Multi-quantum-wells to reveal the band offsets at semiconductor interfaces

W. Pötz, W. Porod, D. K. Ferry

Research output: Contribution to journalArticle

Abstract

The sensitivity of the optical interband transition energies with respect to the band offsets is investigated theoretically for various potential profiles that can be simulated by thin layers of semiconductors. Guided by simple physical arguments we point out which potential profiles are favorable to reveal accurate values for the band offsets. A many-band envelope-function model is used to confirm our predictions quantitatively for GaAs/Ga1-xAlxAs multi-quantum-wells.

Original languageEnglish (US)
Pages (from-to)439-443
Number of pages5
JournalPhysica B+C
Volume134
Issue number1-3
DOIs
StatePublished - 1985

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Optical transitions
Semiconductor quantum wells
Semiconductor materials

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Multi-quantum-wells to reveal the band offsets at semiconductor interfaces. / Pötz, W.; Porod, W.; Ferry, D. K.

In: Physica B+C, Vol. 134, No. 1-3, 1985, p. 439-443.

Research output: Contribution to journalArticle

Pötz, W. ; Porod, W. ; Ferry, D. K. / Multi-quantum-wells to reveal the band offsets at semiconductor interfaces. In: Physica B+C. 1985 ; Vol. 134, No. 1-3. pp. 439-443.
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