Multi-quantum-wells to reveal the band offsets at semiconductor interfaces

W. Pötz; W. Porod; D. K. Ferry

doi:10.1016/0378-4363(85)90385-7

Multi-quantum-wells to reveal the band offsets at semiconductor interfaces

W. Pötz, W. Porod, D. K. Ferry

Research output: Contribution to journal › Article › peer-review

Abstract

The sensitivity of the optical interband transition energies with respect to the band offsets is investigated theoretically for various potential profiles that can be simulated by thin layers of semiconductors. Guided by simple physical arguments we point out which potential profiles are favorable to reveal accurate values for the band offsets. A many-band envelope-function model is used to confirm our predictions quantitatively for GaAs/Ga_1-xAl_xAs multi-quantum-wells.

Original language	English (US)
Pages (from-to)	439-443
Number of pages	5
Journal	Physica B+C
Volume	134
Issue number	1-3
DOIs	https://doi.org/10.1016/0378-4363(85)90385-7
State	Published - Nov 1985

ASJC Scopus subject areas

General Engineering

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title = "Multi-quantum-wells to reveal the band offsets at semiconductor interfaces",

abstract = "The sensitivity of the optical interband transition energies with respect to the band offsets is investigated theoretically for various potential profiles that can be simulated by thin layers of semiconductors. Guided by simple physical arguments we point out which potential profiles are favorable to reveal accurate values for the band offsets. A many-band envelope-function model is used to confirm our predictions quantitatively for GaAs/Ga1-xAlxAs multi-quantum-wells.",

author = "W. P{\"o}tz and W. Porod and Ferry, {D. K.}",

note = "Funding Information: This work was supported by the Army Research Office.",

year = "1985",

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doi = "10.1016/0378-4363(85)90385-7",

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AU - Pötz, W.

AU - Porod, W.

AU - Ferry, D. K.

N1 - Funding Information: This work was supported by the Army Research Office.

PY - 1985/11

Y1 - 1985/11

N2 - The sensitivity of the optical interband transition energies with respect to the band offsets is investigated theoretically for various potential profiles that can be simulated by thin layers of semiconductors. Guided by simple physical arguments we point out which potential profiles are favorable to reveal accurate values for the band offsets. A many-band envelope-function model is used to confirm our predictions quantitatively for GaAs/Ga1-xAlxAs multi-quantum-wells.

AB - The sensitivity of the optical interband transition energies with respect to the band offsets is investigated theoretically for various potential profiles that can be simulated by thin layers of semiconductors. Guided by simple physical arguments we point out which potential profiles are favorable to reveal accurate values for the band offsets. A many-band envelope-function model is used to confirm our predictions quantitatively for GaAs/Ga1-xAlxAs multi-quantum-wells.

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ER -

Multi-quantum-wells to reveal the band offsets at semiconductor interfaces

Abstract

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