Multi-level control of conductive nano-filament evolution in HfO 2 ReRAM by pulse-train operations

L. Zhao; H. Y. Chen; S. C. Wu; Z. Jiang; Shimeng Yu; T. H. Hou; H. S Philip Wong; Y. Nishi

doi:10.1039/c4nr00500g

Multi-level control of conductive nano-filament evolution in HfO ₂ ReRAM by pulse-train operations

L. Zhao, H. Y. Chen, S. C. Wu, Z. Jiang, Shimeng Yu, T. H. Hou, H. S Philip Wong, Y. Nishi

Research output: Contribution to journal › Article › peer-review

140 Scopus citations

Abstract

Precise electrical manipulation of nanoscale defects such as vacancy nano-filaments is highly desired for the multi-level control of ReRAM. In this paper we present a systematic investigation on the pulse-train operation scheme for reliable multi-level control of conductive filament evolution. By applying the pulse-train scheme to a 3 bit per cell HfO₂ ReRAM, the relative standard deviations of resistance levels are improved up to 80% compared to the single-pulse scheme. The observed exponential relationship between the saturated resistance and the pulse amplitude provides evidence for the gap-formation model of the filament-rupture process.

Original language	English (US)
Pages (from-to)	5698-5702
Number of pages	5
Journal	Nanoscale
Volume	6
Issue number	11
DOIs	https://doi.org/10.1039/c4nr00500g
State	Published - Jun 7 2014

ASJC Scopus subject areas

General Materials Science

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title = "Multi-level control of conductive nano-filament evolution in HfO 2 ReRAM by pulse-train operations",

abstract = "Precise electrical manipulation of nanoscale defects such as vacancy nano-filaments is highly desired for the multi-level control of ReRAM. In this paper we present a systematic investigation on the pulse-train operation scheme for reliable multi-level control of conductive filament evolution. By applying the pulse-train scheme to a 3 bit per cell HfO2 ReRAM, the relative standard deviations of resistance levels are improved up to 80% compared to the single-pulse scheme. The observed exponential relationship between the saturated resistance and the pulse amplitude provides evidence for the gap-formation model of the filament-rupture process.",

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AU - Zhao, L.

AU - Chen, H. Y.

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AU - Yu, Shimeng

AU - Hou, T. H.

AU - Wong, H. S Philip

AU - Nishi, Y.

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N2 - Precise electrical manipulation of nanoscale defects such as vacancy nano-filaments is highly desired for the multi-level control of ReRAM. In this paper we present a systematic investigation on the pulse-train operation scheme for reliable multi-level control of conductive filament evolution. By applying the pulse-train scheme to a 3 bit per cell HfO2 ReRAM, the relative standard deviations of resistance levels are improved up to 80% compared to the single-pulse scheme. The observed exponential relationship between the saturated resistance and the pulse amplitude provides evidence for the gap-formation model of the filament-rupture process.

AB - Precise electrical manipulation of nanoscale defects such as vacancy nano-filaments is highly desired for the multi-level control of ReRAM. In this paper we present a systematic investigation on the pulse-train operation scheme for reliable multi-level control of conductive filament evolution. By applying the pulse-train scheme to a 3 bit per cell HfO2 ReRAM, the relative standard deviations of resistance levels are improved up to 80% compared to the single-pulse scheme. The observed exponential relationship between the saturated resistance and the pulse amplitude provides evidence for the gap-formation model of the filament-rupture process.

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Multi-level control of conductive nano-filament evolution in HfO ₂ ReRAM by pulse-train operations

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