TY - GEN
T1 - Multi-ion beam lithography and processing studies
AU - Appleton, Bill R.
AU - Tongay, Sefaattin
AU - Lemaitre, Maxime
AU - Gila, Brent
AU - Hays, David
AU - Scheuermann, Andrew
AU - Fridmann, Joel
N1 - Funding Information:
This work was supported by the Office of Naval Research (ONR) under Contract Number 00075094 (BA).
PY - 2012
Y1 - 2012
N2 - The University of Florida (UF) have recently collaborated with Raith Inc. to modify Raith's ion beam lithography, nanofabrication and engineering (ionLiNE) station that utilizes only Ga ions, into a multi-ion beam system (MionLiNE) by adding the capabilities to use liquid metal alloy sources (LMAIS) to access a variety of ions and an EXB filter for mass separation. The MionLiNE modifications discussed below provide a wide range of spatial and temporal precision that can be used to investigate ion solid interactions under extended boundary conditions, as well as for ion lithography and nanofabrication. Here we demonstrate the ion beam lithographic capabilities of the MionLiNE for fabricating patterned arrays of Au and Si nanocrystals, with nanoscale dimensions, in SiO2 substrates, by direct implantation; and show that the same direct-write/maskless-implantation features can be used for in situ fabrication of nanoelectronic devices. Additionally, the spatial and temporal capabilities of the MionLiNE are used to explore the effects of dose rate on the long-standing surface morphological transformation that occurs in ion bombarded Ge.
AB - The University of Florida (UF) have recently collaborated with Raith Inc. to modify Raith's ion beam lithography, nanofabrication and engineering (ionLiNE) station that utilizes only Ga ions, into a multi-ion beam system (MionLiNE) by adding the capabilities to use liquid metal alloy sources (LMAIS) to access a variety of ions and an EXB filter for mass separation. The MionLiNE modifications discussed below provide a wide range of spatial and temporal precision that can be used to investigate ion solid interactions under extended boundary conditions, as well as for ion lithography and nanofabrication. Here we demonstrate the ion beam lithographic capabilities of the MionLiNE for fabricating patterned arrays of Au and Si nanocrystals, with nanoscale dimensions, in SiO2 substrates, by direct implantation; and show that the same direct-write/maskless-implantation features can be used for in situ fabrication of nanoelectronic devices. Additionally, the spatial and temporal capabilities of the MionLiNE are used to explore the effects of dose rate on the long-standing surface morphological transformation that occurs in ion bombarded Ge.
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U2 - 10.1557/opl.2011.1210
DO - 10.1557/opl.2011.1210
M3 - Conference contribution
AN - SCOPUS:84875462125
SN - 9781605113319
T3 - Materials Research Society Symposium Proceedings
SP - 47
EP - 58
BT - Ion Beams - New Applications from Mesoscale to Nanoscale
T2 - 2011 MRS Spring Meeting
Y2 - 25 April 2011 through 29 April 2011
ER -