Morphology of Ti 37Al 63 thin-films deposited by magnetron sputtering

N. David Theodore, Hyunchul C. Kim, Kaustubh S. Gadre, James W. Mayer, Terry Alford

Research output: Chapter in Book/Report/Conference proceedingConference contribution


TiAl based thin-films possess high oxidation-resistance and high melting points, making them possible candidates for application in electronics. The behavior of the films upon exposure to various temperatures is of interest for such application. In the present study, Ti 37Al 63 thin films were deposited onto SiO 2 substrates using RF magnetron sputtering from a compound target. Anneals were performed in vacuum at temperatures ranging from 400°C to 700°C. The phases and microstructural behavior of the films were evaluated as a function of annealing. Microstructural behavior was correlated with resistivity changes in the films, The behavior of Ti-Al films as potential under-layers for silver metallization was also evaluated. The Ti-Al was observed to enhance the thermal stability of pure Al thin-films. The results are relevant for potential application of the films to electronics.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsR.J. Carter, C.S. Hau-Riege, G.M. Kloster, T.-M. Lu, S.E. Schulz
Number of pages6
StatePublished - 2004
EventMaterials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2004 - San Francisco, CA, United States
Duration: Apr 13 2004Apr 15 2004


OtherMaterials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2004
Country/TerritoryUnited States
CitySan Francisco, CA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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