Morphology of Ti
            37Al
            63 thin-films deposited by magnetron sputtering

N. David Theodore; Hyunchul C. Kim; Kaustubh S. Gadre; James W. Mayer; Terry Alford

Morphology of Ti ₃₇Al ₆₃ thin-films deposited by magnetron sputtering

N. David Theodore, Hyunchul C. Kim, Kaustubh S. Gadre, James W. Mayer, Terry Alford

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

TiAl based thin-films possess high oxidation-resistance and high melting points, making them possible candidates for application in electronics. The behavior of the films upon exposure to various temperatures is of interest for such application. In the present study, Ti ₃₇Al ₆₃ thin films were deposited onto SiO ₂ substrates using RF magnetron sputtering from a compound target. Anneals were performed in vacuum at temperatures ranging from 400°C to 700°C. The phases and microstructural behavior of the films were evaluated as a function of annealing. Microstructural behavior was correlated with resistivity changes in the films, The behavior of Ti-Al films as potential under-layers for silver metallization was also evaluated. The Ti-Al was observed to enhance the thermal stability of pure Al thin-films. The results are relevant for potential application of the films to electronics.

Original language	English (US)
Title of host publication	Materials Research Society Symposium Proceedings
Editors	R.J. Carter, C.S. Hau-Riege, G.M. Kloster, T.-M. Lu, S.E. Schulz
Pages	215-220
Number of pages	6
Volume	812
State	Published - 2004
Event	Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2004 - San Francisco, CA, United States Duration: Apr 13 2004 → Apr 15 2004

Other

Other	Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2004
Country/Territory	United States
City	San Francisco, CA
Period	4/13/04 → 4/15/04

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

Morphology of Ti ₃₇Al ₆₃ thin-films deposited by magnetron sputtering . / Theodore, N. David; Kim, Hyunchul C.; Gadre, Kaustubh S. et al.
Materials Research Society Symposium Proceedings. ed. / R.J. Carter; C.S. Hau-Riege; G.M. Kloster; T.-M. Lu; S.E. Schulz. Vol. 812 2004. p. 215-220.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Theodore, ND, Kim, HC, Gadre, KS, Mayer, JW & Alford, T 2004, Morphology of Ti ₃₇Al ₆₃ thin-films deposited by magnetron sputtering in RJ Carter, CS Hau-Riege, GM Kloster, T-M Lu & SE Schulz (eds), Materials Research Society Symposium Proceedings. vol. 812, pp. 215-220, Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2004, San Francisco, CA, United States, 4/13/04.

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title = "Morphology of Ti 37Al 63 thin-films deposited by magnetron sputtering ",

abstract = "TiAl based thin-films possess high oxidation-resistance and high melting points, making them possible candidates for application in electronics. The behavior of the films upon exposure to various temperatures is of interest for such application. In the present study, Ti 37Al 63 thin films were deposited onto SiO 2 substrates using RF magnetron sputtering from a compound target. Anneals were performed in vacuum at temperatures ranging from 400°C to 700°C. The phases and microstructural behavior of the films were evaluated as a function of annealing. Microstructural behavior was correlated with resistivity changes in the films, The behavior of Ti-Al films as potential under-layers for silver metallization was also evaluated. The Ti-Al was observed to enhance the thermal stability of pure Al thin-films. The results are relevant for potential application of the films to electronics. ",

author = "Theodore, {N. David} and Kim, {Hyunchul C.} and Gadre, {Kaustubh S.} and Mayer, {James W.} and Terry Alford",

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booktitle = "Materials Research Society Symposium Proceedings",

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T1 - Morphology of Ti 37Al 63 thin-films deposited by magnetron sputtering

AU - Theodore, N. David

AU - Kim, Hyunchul C.

AU - Gadre, Kaustubh S.

AU - Mayer, James W.

AU - Alford, Terry

PY - 2004

Y1 - 2004

N2 - TiAl based thin-films possess high oxidation-resistance and high melting points, making them possible candidates for application in electronics. The behavior of the films upon exposure to various temperatures is of interest for such application. In the present study, Ti 37Al 63 thin films were deposited onto SiO 2 substrates using RF magnetron sputtering from a compound target. Anneals were performed in vacuum at temperatures ranging from 400°C to 700°C. The phases and microstructural behavior of the films were evaluated as a function of annealing. Microstructural behavior was correlated with resistivity changes in the films, The behavior of Ti-Al films as potential under-layers for silver metallization was also evaluated. The Ti-Al was observed to enhance the thermal stability of pure Al thin-films. The results are relevant for potential application of the films to electronics.

AB - TiAl based thin-films possess high oxidation-resistance and high melting points, making them possible candidates for application in electronics. The behavior of the films upon exposure to various temperatures is of interest for such application. In the present study, Ti 37Al 63 thin films were deposited onto SiO 2 substrates using RF magnetron sputtering from a compound target. Anneals were performed in vacuum at temperatures ranging from 400°C to 700°C. The phases and microstructural behavior of the films were evaluated as a function of annealing. Microstructural behavior was correlated with resistivity changes in the films, The behavior of Ti-Al films as potential under-layers for silver metallization was also evaluated. The Ti-Al was observed to enhance the thermal stability of pure Al thin-films. The results are relevant for potential application of the films to electronics.

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Y2 - 13 April 2004 through 15 April 2004

ER -

Morphology of Ti ₃₇Al ₆₃ thin-films deposited by magnetron sputtering

Abstract

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ASJC Scopus subject areas

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