Monte‐Carlo Simulation in a Total Energy Scheme for Classical and Quantum High‐Field Transport in Semiconductors

P. Poli, L. Rota, L. Reggiani, R. Bertoncini, D. K. Ferry

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A microscopic deseription of transport properties in a nondegenerate semiconductor is presented which makes use of a novel total energy scheme. The semi‐classical kinetic equation is solved through an original Monte‐Carlo simulation which gives the distribution functions of the turing points, the new quantities devised to deseribe transport properties. Then, this semi‐classical scheme is generalized by including genuine quantum features such as collisional broadening and intra‐collisional field effects. Numerical results for the case of a simple model semiconductor are presented for illustrative purposes.

Original languageEnglish (US)
Pages (from-to)203-217
Number of pages15
Journalphysica status solidi (b)
Volume176
Issue number1
DOIs
StatePublished - 1993

Fingerprint

Transport properties
transport properties
Semiconductor device models
Semiconductor materials
kinetic equations
Distribution functions
simulation
distribution functions
Kinetics
energy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Monte‐Carlo Simulation in a Total Energy Scheme for Classical and Quantum High‐Field Transport in Semiconductors. / Poli, P.; Rota, L.; Reggiani, L.; Bertoncini, R.; Ferry, D. K.

In: physica status solidi (b), Vol. 176, No. 1, 1993, p. 203-217.

Research output: Contribution to journalArticle

Poli, P. ; Rota, L. ; Reggiani, L. ; Bertoncini, R. ; Ferry, D. K. / Monte‐Carlo Simulation in a Total Energy Scheme for Classical and Quantum High‐Field Transport in Semiconductors. In: physica status solidi (b). 1993 ; Vol. 176, No. 1. pp. 203-217.
@article{721d738ed4e24f51977bc951051bb9c0,
title = "Monte‐Carlo Simulation in a Total Energy Scheme for Classical and Quantum High‐Field Transport in Semiconductors",
abstract = "A microscopic deseription of transport properties in a nondegenerate semiconductor is presented which makes use of a novel total energy scheme. The semi‐classical kinetic equation is solved through an original Monte‐Carlo simulation which gives the distribution functions of the turing points, the new quantities devised to deseribe transport properties. Then, this semi‐classical scheme is generalized by including genuine quantum features such as collisional broadening and intra‐collisional field effects. Numerical results for the case of a simple model semiconductor are presented for illustrative purposes.",
author = "P. Poli and L. Rota and L. Reggiani and R. Bertoncini and Ferry, {D. K.}",
year = "1993",
doi = "10.1002/pssb.2221760120",
language = "English (US)",
volume = "176",
pages = "203--217",
journal = "Physica Status Solidi (B): Basic Research",
issn = "0370-1972",
publisher = "Wiley-VCH Verlag",
number = "1",

}

TY - JOUR

T1 - Monte‐Carlo Simulation in a Total Energy Scheme for Classical and Quantum High‐Field Transport in Semiconductors

AU - Poli, P.

AU - Rota, L.

AU - Reggiani, L.

AU - Bertoncini, R.

AU - Ferry, D. K.

PY - 1993

Y1 - 1993

N2 - A microscopic deseription of transport properties in a nondegenerate semiconductor is presented which makes use of a novel total energy scheme. The semi‐classical kinetic equation is solved through an original Monte‐Carlo simulation which gives the distribution functions of the turing points, the new quantities devised to deseribe transport properties. Then, this semi‐classical scheme is generalized by including genuine quantum features such as collisional broadening and intra‐collisional field effects. Numerical results for the case of a simple model semiconductor are presented for illustrative purposes.

AB - A microscopic deseription of transport properties in a nondegenerate semiconductor is presented which makes use of a novel total energy scheme. The semi‐classical kinetic equation is solved through an original Monte‐Carlo simulation which gives the distribution functions of the turing points, the new quantities devised to deseribe transport properties. Then, this semi‐classical scheme is generalized by including genuine quantum features such as collisional broadening and intra‐collisional field effects. Numerical results for the case of a simple model semiconductor are presented for illustrative purposes.

UR - http://www.scopus.com/inward/record.url?scp=84987058273&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84987058273&partnerID=8YFLogxK

U2 - 10.1002/pssb.2221760120

DO - 10.1002/pssb.2221760120

M3 - Article

AN - SCOPUS:84987058273

VL - 176

SP - 203

EP - 217

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

SN - 0370-1972

IS - 1

ER -