Monte‐Carlo Simulation in a Total Energy Scheme for Classical and Quantum High‐Field Transport in Semiconductors

P. Poli, L. Rota, L. Reggiani, R. Bertoncini, D. K. Ferry

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

A microscopic deseription of transport properties in a nondegenerate semiconductor is presented which makes use of a novel total energy scheme. The semi‐classical kinetic equation is solved through an original Monte‐Carlo simulation which gives the distribution functions of the turing points, the new quantities devised to deseribe transport properties. Then, this semi‐classical scheme is generalized by including genuine quantum features such as collisional broadening and intra‐collisional field effects. Numerical results for the case of a simple model semiconductor are presented for illustrative purposes.

Original languageEnglish (US)
Pages (from-to)203-217
Number of pages15
Journalphysica status solidi (b)
Volume176
Issue number1
DOIs
StatePublished - 1993

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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