Monte Carlo studies of intersubband relaxation in semiconductor microstructures

Stephen Goodnick, J. E. Lary

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

In recent years, a number of time-resolved photoexcitation experiments have been reported which directly measure the decay of photoexcited carriers due to inter-subband scattering in semiconductor quantum wells and superlattices. Various techniques such as differential transmission, photoluminescence spectroscopy and Raman spectroscopy have probed different regimes of this non-equilibrium carrier relaxation. Particle simulation using Monte Carlo techniques has proved particularly useful for modeling the non-stationary behaviour of carriers during and after ultrafast laser excitation in such experiments. Here a discussion is given of hot carrier dynamics in heterojunction systems during photoexcitation, and the modelling of the dynamics using ensemble particle simulation. Comparison is made with different experiments which measure the effects of intersubband relaxation in single and multiple quantum wells.

Original languageEnglish (US)
Article number026
JournalSemiconductor Science and Technology
Volume7
Issue number3 B
DOIs
StatePublished - 1992
Externally publishedYes

Fingerprint

Photoexcitation
Semiconductor materials
Semiconductor quantum wells
microstructure
Microstructure
photoexcitation
Ultrafast lasers
Laser excitation
Hot carriers
Photoluminescence spectroscopy
Experiments
Superlattices
quantum wells
Raman spectroscopy
Heterojunctions
Scattering
spectroscopy
superlattices
heterojunctions
simulation

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Monte Carlo studies of intersubband relaxation in semiconductor microstructures. / Goodnick, Stephen; Lary, J. E.

In: Semiconductor Science and Technology, Vol. 7, No. 3 B, 026, 1992.

Research output: Contribution to journalArticle

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