Monte Carlo simulation of narrow-width SOI devices: Incorporation of the short range Coulomb interaction

The ultimate limits in scaling of conventional MOSFET devices have led the researchers from all over the world to look for novel device concepts, such as dual-date SOI devices, FinFETs, focused ion beam MOSFETs, etc. These novel devices suppress some of the short channel effects exhibited by conventional MOSFET devices. However, a lot of the old issues still remain and new issues begin to appear. For example, in both dual-gate MOSFETs and in Fin-FET devices, quantum mechanical size quantization effects significantly affect the overall device behavior. In addition, unintentional doping leads to considerable fluctuation in the device parameters, and the electron-electron interactions affect the thermalization of the carriers at the drain end of the device. In this work we investigate the role of a single impurity on the operation of narrow-width SOI devices. Our investigations suggest that impurities near the middle portion of the source end of the channel have most significant impact on the device drive current. Regarding the electron-electron interactions, we find that they affect the carrier velocity near the drain end of the channel. Note that in our 3D Monte Carlo particle-based device simulator, we have implemented two schemes that properly account for the short-range electron-ion and electron-electron interactions: the corrected Coulomb approach and the P ³M method.