Abstract

The semiconductor device-based electronics industry has been the largest industry in the world with global sales of over a trillion dollars since 1998. The revolution in the semiconductor industry, a large portion of the electronics industry, began in 1947 with the fabrication of bipolar devices on slabs of polycrystalline germanium (Ge). Single-crystalline materials were later proposed and introduced that made possible the fabrication of grown junction transistors. Migration to silicon (Si)-based devices was initially hindered by the stability of the Si/SiO2 materials system, necessitating a new generation of crystal pullers with improved environmental controls to prevent SiO2 formation. Later, the stability and low interface-state density of the Si/SiO2 materials system provided passivation of junctions and eventually, the migration from bipolar devices to field-effect devices in 1960. By 1968, both complementary metal-oxide-semiconductor (CMOS) devices and poly-Si gate technology that allowed self-alignment of the gate to the source/drain of the device had been developed. These innovations permitted a significant reduction in power dissipation and a reduction of the overlap capacitance, improving frequency performance and resulting in the essential components of the modern CMOS device.

Original languageEnglish (US)
Title of host publicationHandbook of Optoelectronic Device Modeling and Simulation
Subtitle of host publicationLasers, Modulators, Photodetectors, Solar Cells, and Numerical Methods
PublisherCRC Press
Pages773-806
Number of pages34
Volume2
ISBN (Electronic)9781498749572
ISBN (Print)1498749569, 9781498749565
DOIs
StatePublished - Jan 1 2017

Fingerprint

Silicon
MOS devices
industries
semiconductor devices
Electronics industry
silicon
simulation
Germanium
CMOS
Fabrication
Interface states
environmental control
self alignment
junction transistors
Semiconductor devices
fabrication
Passivation
Industry
Energy dissipation
Sales

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)
  • Materials Science(all)

Cite this

Raleva, K., Shaik, A. R., Hathwar, R., Laturia, A., Qazi, S. S., Daugherty, R., ... Goodnick, S. (2017). Monte carlo device simulations. In Handbook of Optoelectronic Device Modeling and Simulation: Lasers, Modulators, Photodetectors, Solar Cells, and Numerical Methods (Vol. 2, pp. 773-806). CRC Press. https://doi.org/10.4324/9781315152318

Monte carlo device simulations. / Raleva, Katerina; Shaik, Abdul R.; Hathwar, Raghuraj; Laturia, Akash; Qazi, Suleman S.; Daugherty, Robin; Vasileska, Dragica; Goodnick, Stephen.

Handbook of Optoelectronic Device Modeling and Simulation: Lasers, Modulators, Photodetectors, Solar Cells, and Numerical Methods. Vol. 2 CRC Press, 2017. p. 773-806.

Research output: Chapter in Book/Report/Conference proceedingChapter

Raleva, K, Shaik, AR, Hathwar, R, Laturia, A, Qazi, SS, Daugherty, R, Vasileska, D & Goodnick, S 2017, Monte carlo device simulations. in Handbook of Optoelectronic Device Modeling and Simulation: Lasers, Modulators, Photodetectors, Solar Cells, and Numerical Methods. vol. 2, CRC Press, pp. 773-806. https://doi.org/10.4324/9781315152318
Raleva K, Shaik AR, Hathwar R, Laturia A, Qazi SS, Daugherty R et al. Monte carlo device simulations. In Handbook of Optoelectronic Device Modeling and Simulation: Lasers, Modulators, Photodetectors, Solar Cells, and Numerical Methods. Vol. 2. CRC Press. 2017. p. 773-806 https://doi.org/10.4324/9781315152318
Raleva, Katerina ; Shaik, Abdul R. ; Hathwar, Raghuraj ; Laturia, Akash ; Qazi, Suleman S. ; Daugherty, Robin ; Vasileska, Dragica ; Goodnick, Stephen. / Monte carlo device simulations. Handbook of Optoelectronic Device Modeling and Simulation: Lasers, Modulators, Photodetectors, Solar Cells, and Numerical Methods. Vol. 2 CRC Press, 2017. pp. 773-806
@inbook{3d63b9b63bab474d9165d179cc5c403c,
title = "Monte carlo device simulations",
abstract = "The semiconductor device-based electronics industry has been the largest industry in the world with global sales of over a trillion dollars since 1998. The revolution in the semiconductor industry, a large portion of the electronics industry, began in 1947 with the fabrication of bipolar devices on slabs of polycrystalline germanium (Ge). Single-crystalline materials were later proposed and introduced that made possible the fabrication of grown junction transistors. Migration to silicon (Si)-based devices was initially hindered by the stability of the Si/SiO2 materials system, necessitating a new generation of crystal pullers with improved environmental controls to prevent SiO2 formation. Later, the stability and low interface-state density of the Si/SiO2 materials system provided passivation of junctions and eventually, the migration from bipolar devices to field-effect devices in 1960. By 1968, both complementary metal-oxide-semiconductor (CMOS) devices and poly-Si gate technology that allowed self-alignment of the gate to the source/drain of the device had been developed. These innovations permitted a significant reduction in power dissipation and a reduction of the overlap capacitance, improving frequency performance and resulting in the essential components of the modern CMOS device.",
author = "Katerina Raleva and Shaik, {Abdul R.} and Raghuraj Hathwar and Akash Laturia and Qazi, {Suleman S.} and Robin Daugherty and Dragica Vasileska and Stephen Goodnick",
year = "2017",
month = "1",
day = "1",
doi = "10.4324/9781315152318",
language = "English (US)",
isbn = "1498749569",
volume = "2",
pages = "773--806",
booktitle = "Handbook of Optoelectronic Device Modeling and Simulation",
publisher = "CRC Press",

}

TY - CHAP

T1 - Monte carlo device simulations

AU - Raleva, Katerina

AU - Shaik, Abdul R.

AU - Hathwar, Raghuraj

AU - Laturia, Akash

AU - Qazi, Suleman S.

AU - Daugherty, Robin

AU - Vasileska, Dragica

AU - Goodnick, Stephen

PY - 2017/1/1

Y1 - 2017/1/1

N2 - The semiconductor device-based electronics industry has been the largest industry in the world with global sales of over a trillion dollars since 1998. The revolution in the semiconductor industry, a large portion of the electronics industry, began in 1947 with the fabrication of bipolar devices on slabs of polycrystalline germanium (Ge). Single-crystalline materials were later proposed and introduced that made possible the fabrication of grown junction transistors. Migration to silicon (Si)-based devices was initially hindered by the stability of the Si/SiO2 materials system, necessitating a new generation of crystal pullers with improved environmental controls to prevent SiO2 formation. Later, the stability and low interface-state density of the Si/SiO2 materials system provided passivation of junctions and eventually, the migration from bipolar devices to field-effect devices in 1960. By 1968, both complementary metal-oxide-semiconductor (CMOS) devices and poly-Si gate technology that allowed self-alignment of the gate to the source/drain of the device had been developed. These innovations permitted a significant reduction in power dissipation and a reduction of the overlap capacitance, improving frequency performance and resulting in the essential components of the modern CMOS device.

AB - The semiconductor device-based electronics industry has been the largest industry in the world with global sales of over a trillion dollars since 1998. The revolution in the semiconductor industry, a large portion of the electronics industry, began in 1947 with the fabrication of bipolar devices on slabs of polycrystalline germanium (Ge). Single-crystalline materials were later proposed and introduced that made possible the fabrication of grown junction transistors. Migration to silicon (Si)-based devices was initially hindered by the stability of the Si/SiO2 materials system, necessitating a new generation of crystal pullers with improved environmental controls to prevent SiO2 formation. Later, the stability and low interface-state density of the Si/SiO2 materials system provided passivation of junctions and eventually, the migration from bipolar devices to field-effect devices in 1960. By 1968, both complementary metal-oxide-semiconductor (CMOS) devices and poly-Si gate technology that allowed self-alignment of the gate to the source/drain of the device had been developed. These innovations permitted a significant reduction in power dissipation and a reduction of the overlap capacitance, improving frequency performance and resulting in the essential components of the modern CMOS device.

UR - http://www.scopus.com/inward/record.url?scp=85052782747&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85052782747&partnerID=8YFLogxK

U2 - 10.4324/9781315152318

DO - 10.4324/9781315152318

M3 - Chapter

SN - 1498749569

SN - 9781498749565

VL - 2

SP - 773

EP - 806

BT - Handbook of Optoelectronic Device Modeling and Simulation

PB - CRC Press

ER -