Abstract
Four monolithic transformers and an inductor are fabricated in a 5 metal CMOS process with varying number of turns and metal thicknesses. The s-parameters are measured from 500MHz to 5.5GHz, and equivalent lumped element models are extracted to calculate the differential quality factor vs. frequency. The transformers demonstrated significantly higher quality factors peaking at higher frequencies compared to the inductor.
Original language | English (US) |
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Title of host publication | Proceedings - IEEE International Symposium on Circuits and Systems |
Volume | 2 |
State | Published - 2002 |
Event | 2002 IEEE International Symposium on Circuits and Systems - Phoenix, AZ, United States Duration: May 26 2002 → May 29 2002 |
Other
Other | 2002 IEEE International Symposium on Circuits and Systems |
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Country/Territory | United States |
City | Phoenix, AZ |
Period | 5/26/02 → 5/29/02 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials