Monocrystalline CdTe/MgCdTe double-heterostructure solar cells with a ZnTe hole-contact and passivation layer

Jacob J. Becker, Calli M. Campbell, Yuan Zhao, Mathieu Boccard, Dibyajvoti Mohanty, Ernesto Suarez, Maxwell Lassise, Ishwara Bhat, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Monocrystalline p-ZnTe/i-MgCdTe/n-CdTe/n-MgCdTe double-heterostructure (DH) solar cells are grown through a combination of MBE and MOCVD deposition techniques using several different dopants. The adverse effects (high interface recombination velocity) of the lattice mismatched ZnTe/CdTe hetero-interface is suppressed by the use of a DH with an intrinsic MgCdTe top barrier layer that functions as a passivation layer. The steady-state photoluminescence intensity is used to compare the potential device performance with previous ZnTe/CdTe and a-Si/i-MgCdTe/CdTe device structures while quantum efficiency measurements demonstrate the benefit of using ZnTe over previously demonstrated contact layers.

Original languageEnglish (US)
Title of host publication2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-4
Number of pages4
ISBN (Electronic)9781509056057
DOIs
StatePublished - May 25 2018
Event44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States
Duration: Jun 25 2017Jun 30 2017

Other

Other44th IEEE Photovoltaic Specialist Conference, PVSC 2017
CountryUnited States
CityWashington
Period6/25/176/30/17

Fingerprint

Passivation
Heterojunctions
Solar cells
Metallorganic chemical vapor deposition
Quantum efficiency
Molecular beam epitaxy
Photoluminescence
Doping (additives)

Keywords

  • CdTe
  • Double-heterostructure
  • Monocrystalline
  • Photovoltaics (PV)
  • ZnTe

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Becker, J. J., Campbell, C. M., Zhao, Y., Boccard, M., Mohanty, D., Suarez, E., ... Zhang, Y-H. (2018). Monocrystalline CdTe/MgCdTe double-heterostructure solar cells with a ZnTe hole-contact and passivation layer. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1-4). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366296

Monocrystalline CdTe/MgCdTe double-heterostructure solar cells with a ZnTe hole-contact and passivation layer. / Becker, Jacob J.; Campbell, Calli M.; Zhao, Yuan; Boccard, Mathieu; Mohanty, Dibyajvoti; Suarez, Ernesto; Lassise, Maxwell; Bhat, Ishwara; Zhang, Yong-Hang.

2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-4.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Becker, JJ, Campbell, CM, Zhao, Y, Boccard, M, Mohanty, D, Suarez, E, Lassise, M, Bhat, I & Zhang, Y-H 2018, Monocrystalline CdTe/MgCdTe double-heterostructure solar cells with a ZnTe hole-contact and passivation layer. in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., pp. 1-4, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, United States, 6/25/17. https://doi.org/10.1109/PVSC.2017.8366296
Becker JJ, Campbell CM, Zhao Y, Boccard M, Mohanty D, Suarez E et al. Monocrystalline CdTe/MgCdTe double-heterostructure solar cells with a ZnTe hole-contact and passivation layer. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-4 https://doi.org/10.1109/PVSC.2017.8366296
Becker, Jacob J. ; Campbell, Calli M. ; Zhao, Yuan ; Boccard, Mathieu ; Mohanty, Dibyajvoti ; Suarez, Ernesto ; Lassise, Maxwell ; Bhat, Ishwara ; Zhang, Yong-Hang. / Monocrystalline CdTe/MgCdTe double-heterostructure solar cells with a ZnTe hole-contact and passivation layer. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1-4
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