Abstract

Monocrystalline p-ZnTe/i-MgCdTe/n-CdTe/n-MgC-dTe double-heterostructure solar cells are grown through a combination of molecular beam epitaxy (MBE) and metal–organic chemical vapor deposition (MOCVD) deposition techniques using two different dopants within the ZnTe contact layer. The recombination at the ZnTe/CdTe heterointerface is believed to be suppressed by the use of a double heterostructure with an intrinsic MgCdTe passivation layer. A comparison of the steady-state photoluminescence intensity of these cells with record- Voc monocrystalline CdTe solar cells indicates the performance potential of devices with ZnTe contacts, while increases in the internal quantum efficiency demonstrate the benefit of using ZnTe over these previously demonstrated contacts. Solar cells utilizing a copper-doped ZnTe hole contact show promise in terms of built-in voltage but do not realize that potential in terms of Voc with a power conversion efficiency of 9.4% and a Voc of 819 mV. Solar cells utilizing an arsenic-doped ZnTe hole contact exhibit the highest power conversion efficiency, reaching 14.08% with an open-circuit voltage of 867 mV.

Original languageEnglish (US)
JournalIEEE Journal of Photovoltaics
DOIs
StateAccepted/In press - Nov 22 2016

Fingerprint

Heterojunctions
Solar cells
solar cells
Conversion efficiency
Metallorganic chemical vapor deposition
Arsenic
Open circuit voltage
open circuit voltage
Quantum efficiency
Passivation
Molecular beam epitaxy
arsenic
passivity
metalorganic chemical vapor deposition
quantum efficiency
Copper
Photoluminescence
molecular beam epitaxy
Doping (additives)
photoluminescence

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Monocrystalline CdTe/MgCdTe Double-Heterostructure Solar Cells With ZnTe Hole Contacts. / Becker, Jacob J.; Campbell, Calli M.; Zhao, Yuan; Boccard, Mathieu; Mohanty, Dibyajvoti; Lassise, Maxwell; Suarez, Ernesto; Bhat, Ishwara; Holman, Zachary; Zhang, Yong-Hang.

In: IEEE Journal of Photovoltaics, 22.11.2016.

Research output: Contribution to journalArticle

Becker, Jacob J. ; Campbell, Calli M. ; Zhao, Yuan ; Boccard, Mathieu ; Mohanty, Dibyajvoti ; Lassise, Maxwell ; Suarez, Ernesto ; Bhat, Ishwara ; Holman, Zachary ; Zhang, Yong-Hang. / Monocrystalline CdTe/MgCdTe Double-Heterostructure Solar Cells With ZnTe Hole Contacts. In: IEEE Journal of Photovoltaics. 2016.
@article{24e67c0f0ed34a1e92871ce001ec3fc7,
title = "Monocrystalline CdTe/MgCdTe Double-Heterostructure Solar Cells With ZnTe Hole Contacts",
abstract = "Monocrystalline p-ZnTe/i-MgCdTe/n-CdTe/n-MgC-dTe double-heterostructure solar cells are grown through a combination of molecular beam epitaxy (MBE) and metal–organic chemical vapor deposition (MOCVD) deposition techniques using two different dopants within the ZnTe contact layer. The recombination at the ZnTe/CdTe heterointerface is believed to be suppressed by the use of a double heterostructure with an intrinsic MgCdTe passivation layer. A comparison of the steady-state photoluminescence intensity of these cells with record- Voc monocrystalline CdTe solar cells indicates the performance potential of devices with ZnTe contacts, while increases in the internal quantum efficiency demonstrate the benefit of using ZnTe over these previously demonstrated contacts. Solar cells utilizing a copper-doped ZnTe hole contact show promise in terms of built-in voltage but do not realize that potential in terms of Voc with a power conversion efficiency of 9.4{\%} and a Voc of 819 mV. Solar cells utilizing an arsenic-doped ZnTe hole contact exhibit the highest power conversion efficiency, reaching 14.08{\%} with an open-circuit voltage of 867 mV.",
author = "Becker, {Jacob J.} and Campbell, {Calli M.} and Yuan Zhao and Mathieu Boccard and Dibyajvoti Mohanty and Maxwell Lassise and Ernesto Suarez and Ishwara Bhat and Zachary Holman and Yong-Hang Zhang",
year = "2016",
month = "11",
day = "22",
doi = "10.1109/JPHOTOV.2016.2626139",
language = "English (US)",
journal = "IEEE Journal of Photovoltaics",
issn = "2156-3381",
publisher = "IEEE Electron Devices Society",

}

TY - JOUR

T1 - Monocrystalline CdTe/MgCdTe Double-Heterostructure Solar Cells With ZnTe Hole Contacts

AU - Becker, Jacob J.

AU - Campbell, Calli M.

AU - Zhao, Yuan

AU - Boccard, Mathieu

AU - Mohanty, Dibyajvoti

AU - Lassise, Maxwell

AU - Suarez, Ernesto

AU - Bhat, Ishwara

AU - Holman, Zachary

AU - Zhang, Yong-Hang

PY - 2016/11/22

Y1 - 2016/11/22

N2 - Monocrystalline p-ZnTe/i-MgCdTe/n-CdTe/n-MgC-dTe double-heterostructure solar cells are grown through a combination of molecular beam epitaxy (MBE) and metal–organic chemical vapor deposition (MOCVD) deposition techniques using two different dopants within the ZnTe contact layer. The recombination at the ZnTe/CdTe heterointerface is believed to be suppressed by the use of a double heterostructure with an intrinsic MgCdTe passivation layer. A comparison of the steady-state photoluminescence intensity of these cells with record- Voc monocrystalline CdTe solar cells indicates the performance potential of devices with ZnTe contacts, while increases in the internal quantum efficiency demonstrate the benefit of using ZnTe over these previously demonstrated contacts. Solar cells utilizing a copper-doped ZnTe hole contact show promise in terms of built-in voltage but do not realize that potential in terms of Voc with a power conversion efficiency of 9.4% and a Voc of 819 mV. Solar cells utilizing an arsenic-doped ZnTe hole contact exhibit the highest power conversion efficiency, reaching 14.08% with an open-circuit voltage of 867 mV.

AB - Monocrystalline p-ZnTe/i-MgCdTe/n-CdTe/n-MgC-dTe double-heterostructure solar cells are grown through a combination of molecular beam epitaxy (MBE) and metal–organic chemical vapor deposition (MOCVD) deposition techniques using two different dopants within the ZnTe contact layer. The recombination at the ZnTe/CdTe heterointerface is believed to be suppressed by the use of a double heterostructure with an intrinsic MgCdTe passivation layer. A comparison of the steady-state photoluminescence intensity of these cells with record- Voc monocrystalline CdTe solar cells indicates the performance potential of devices with ZnTe contacts, while increases in the internal quantum efficiency demonstrate the benefit of using ZnTe over these previously demonstrated contacts. Solar cells utilizing a copper-doped ZnTe hole contact show promise in terms of built-in voltage but do not realize that potential in terms of Voc with a power conversion efficiency of 9.4% and a Voc of 819 mV. Solar cells utilizing an arsenic-doped ZnTe hole contact exhibit the highest power conversion efficiency, reaching 14.08% with an open-circuit voltage of 867 mV.

UR - http://www.scopus.com/inward/record.url?scp=84997611144&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84997611144&partnerID=8YFLogxK

U2 - 10.1109/JPHOTOV.2016.2626139

DO - 10.1109/JPHOTOV.2016.2626139

M3 - Article

JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

SN - 2156-3381

ER -