Molecular-dynamics study of single-electron charging in semiconductor wires

Kazuo Yano, David K. Ferry

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

A molecular-dynamics technique is applied to single-electron charging effects in semiconductor wires, and the impact of strong electron-electron correlation on the conductance is investigated. Because of the relatively low electron density in semiconductors compared to a metal, the screening length is comparable to the sample size, which requires a treatment beyond the conventional Coulomb-blockade argument using macroscopic capacitance. Based on the molecular-dynamics method, most features of the periodic conductance oscillation in the double-barrier system are reproduced, and the feasibility of this technique in single-electron charging phenomena is demonstrated. Experimental observation of an activation energy smaller than the threshold energy of the nonlinear conductance, which the normal Coulomb-blockade model cannot explain, is reproduced in the present approach. This effect is due to the strong microscopic correlation, so that this is essential to describe accurately the single-electron charging effects in semiconductor systems.

Original languageEnglish (US)
Pages (from-to)3865-3871
Number of pages7
JournalPhysical Review B
Volume46
Issue number7
DOIs
StatePublished - 1992

Fingerprint

charging
Molecular dynamics
wire
Wire
Semiconductor materials
molecular dynamics
Coulomb blockade
Electrons
electrons
Electron correlations
Carrier concentration
Screening
Capacitance
Activation energy
Metals
screening
capacitance
activation energy
oscillations
thresholds

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Molecular-dynamics study of single-electron charging in semiconductor wires. / Yano, Kazuo; Ferry, David K.

In: Physical Review B, Vol. 46, No. 7, 1992, p. 3865-3871.

Research output: Contribution to journalArticle

Yano, Kazuo ; Ferry, David K. / Molecular-dynamics study of single-electron charging in semiconductor wires. In: Physical Review B. 1992 ; Vol. 46, No. 7. pp. 3865-3871.
@article{d2d1e1505f504f88a2b77e240e6b68a8,
title = "Molecular-dynamics study of single-electron charging in semiconductor wires",
abstract = "A molecular-dynamics technique is applied to single-electron charging effects in semiconductor wires, and the impact of strong electron-electron correlation on the conductance is investigated. Because of the relatively low electron density in semiconductors compared to a metal, the screening length is comparable to the sample size, which requires a treatment beyond the conventional Coulomb-blockade argument using macroscopic capacitance. Based on the molecular-dynamics method, most features of the periodic conductance oscillation in the double-barrier system are reproduced, and the feasibility of this technique in single-electron charging phenomena is demonstrated. Experimental observation of an activation energy smaller than the threshold energy of the nonlinear conductance, which the normal Coulomb-blockade model cannot explain, is reproduced in the present approach. This effect is due to the strong microscopic correlation, so that this is essential to describe accurately the single-electron charging effects in semiconductor systems.",
author = "Kazuo Yano and Ferry, {David K.}",
year = "1992",
doi = "10.1103/PhysRevB.46.3865",
language = "English (US)",
volume = "46",
pages = "3865--3871",
journal = "Physical Review B-Condensed Matter",
issn = "0163-1829",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

TY - JOUR

T1 - Molecular-dynamics study of single-electron charging in semiconductor wires

AU - Yano, Kazuo

AU - Ferry, David K.

PY - 1992

Y1 - 1992

N2 - A molecular-dynamics technique is applied to single-electron charging effects in semiconductor wires, and the impact of strong electron-electron correlation on the conductance is investigated. Because of the relatively low electron density in semiconductors compared to a metal, the screening length is comparable to the sample size, which requires a treatment beyond the conventional Coulomb-blockade argument using macroscopic capacitance. Based on the molecular-dynamics method, most features of the periodic conductance oscillation in the double-barrier system are reproduced, and the feasibility of this technique in single-electron charging phenomena is demonstrated. Experimental observation of an activation energy smaller than the threshold energy of the nonlinear conductance, which the normal Coulomb-blockade model cannot explain, is reproduced in the present approach. This effect is due to the strong microscopic correlation, so that this is essential to describe accurately the single-electron charging effects in semiconductor systems.

AB - A molecular-dynamics technique is applied to single-electron charging effects in semiconductor wires, and the impact of strong electron-electron correlation on the conductance is investigated. Because of the relatively low electron density in semiconductors compared to a metal, the screening length is comparable to the sample size, which requires a treatment beyond the conventional Coulomb-blockade argument using macroscopic capacitance. Based on the molecular-dynamics method, most features of the periodic conductance oscillation in the double-barrier system are reproduced, and the feasibility of this technique in single-electron charging phenomena is demonstrated. Experimental observation of an activation energy smaller than the threshold energy of the nonlinear conductance, which the normal Coulomb-blockade model cannot explain, is reproduced in the present approach. This effect is due to the strong microscopic correlation, so that this is essential to describe accurately the single-electron charging effects in semiconductor systems.

UR - http://www.scopus.com/inward/record.url?scp=0344317349&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0344317349&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.46.3865

DO - 10.1103/PhysRevB.46.3865

M3 - Article

AN - SCOPUS:0344317349

VL - 46

SP - 3865

EP - 3871

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 7

ER -